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Cypress Semiconductor Corp CY7C2270XV18-600BZXC

Part No.:
CY7C2270XV18-600BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2270XV18-600BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:105

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Product details

Overview

CY7C2270XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous pipelined DDR II+ Xtreme SRAM configured as 1M × 36, operating at up to 600 MHz clock frequency with 2.5-cycle read latency when DOFF is HIGH, featuring on-die termination (ODT), echo clocks (CQ/CQ), and QVLD data-valid indicator - deployed in high-bandwidth networking line cards and packet buffering subsystems.

For engineers reviewing the CY7C2270XV18 datasheet, CY7C2270XV18 pinout, CY7C2270XV18 application, or CY7C2270XV18 equivalent, key selection criteria include its 1M × 36 organization, 1.8 V core / 1.4–1.6 V I/O supply compatibility, HSTL I/O interface, 165-ball FBGA package, and dual-clock DDR timing architecture supporting precise data capture in burst-oriented memory systems.

Technical Context

This SRAM implements a two-word burst architecture with synchronous pipelined addressing: addresses are latched on alternate rising edges of K/K, while write data is registered on both K and K rising edges. Read data is driven on both K and K rising edges, delivering 36-bit words per burst cycle.

The device integrates a PLL for accurate data placement, supports programmable ODT for DQ/BWS/K/K inputs, and uses ZQ calibration to tune output impedance to system bus requirements. Echo clocks CQ/CQ are free-running and edge-aligned with K/K, enabling deterministic data capture without external strobes.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 36 Mbit (1M × 36), enabling single-chip 36-bit wide memory interfaces without depth expansion
Max Clock Frequency 600 MHz - supports 1.2 Gbps DDR data rate (1200 MT/s) with 2.5-cycle read latency
Core / I/O Voltage VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.6 V - allows interoperability with 1.5 V I/O systems and reduces power vs. 2.5 V SRAMs
Interface Standard HSTL Class I inputs and variable-drive HSTL outputs - ensures signal integrity at >600 MHz with controlled slew rates
On-Die Termination ODT supported on DQ[35:0], BWS[3:0], K/K - eliminates 24+ external 50 Ω resistors, saving PCB area and routing complexity
Timing Control DOFF pin selects latency mode: HIGH → 2.5-cycle DDR II+, LOW → 1-cycle DDR I - enables backward compatibility in legacy designs
Valid Data Indicator QVLD output edge-aligned with CQ/CQ - provides unambiguous data validity window for FPGA/ASIC capture logic

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads; tri-stated on deselect
K / K Differential clock inputs Rising edges control all synchronous operations; K used for address/control latching, both used for data transfer timing
CQ / CQ Output echo clocks Free-running, K-synchronized clocks aligned to Q[35:0] valid windows - eliminate need for external capture strobes
QVLD Valid data indicator Asserted synchronously with CQ/CQ rising edges to mark exact duration of valid output data
ODT On-die termination select Configures ODT resistance range (RQ/3.33 or RQ/1.66) during power-up; default HIGH enables high-range mode
ZQ Impedance calibration reference Connected to external resistor to ground; sets output driver impedance to 0.2 × RQ for matched bus termination
LD Load enable Latches address and R/W state on K rising edge; initiates burst sequence - required for every access
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes (D[8:0] to D[35:27]); enables partial writes without read-modify-write overhead

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% vs. single-word SRAMs - lowers EMI and simplifies controller address generation logic
Programmable 2.5/1-cycle read latency DOFF pin enables runtime selection between DDR II+ performance and DDR I compatibility - supports multi-generation system upgrades
Integrated PLL and echo clocks Eliminates need for external delay-locked loops or phase-matching circuitry - improves timing margin in high-speed backplane designs
HSTL I/O with variable drive strength Ensures clean signal edges across varying trace lengths and loads - avoids overshoot/undershoot without external series resistors
JTAG 1149.1 boundary scan Enables in-system test and debug of memory interconnects - critical for validating high-density BGA routing in telecom modules

Applications

Packet Buffering in Switch ASICs Line Card Memory Subsystem

Use Scenario: High-throughput Ethernet switch fabric requiring low-latency, burst-capable buffer memory for frame reordering and congestion management.

IC Role / Device Role / Timing Role: Primary 36-bit wide packet buffer SRAM interfaced directly to switch ASIC's DDR memory controller with precise echo-clock–driven data capture.

Use Value: 2.5-cycle latency and QVLD signaling enable deterministic 600 MHz operation without timing closure penalties in 10G/25G line-rate designs.

Use Scenario: Modular optical transport platform needing reliable, high-bandwidth memory for real-time traffic shaping and header processing.

IC Role / Device Role / Timing Role: Synchronous burst SRAM serving as shared buffer between multiple DSPs and network processors via HSTL-bus interconnect.

Use Value: On-die termination eliminates 36 external termination resistors per device - reducing BOM cost and improving signal integrity on dense 16-layer backplanes.

Test Equipment Data Capture Buffer Industrial Real-Time Controller Cache

Use Scenario: High-speed digital oscilloscope capturing multi-gigasample waveforms into deep memory with minimal dead time.

IC Role / Device Role / Timing Role: Burst-mode SRAM acting as first-level acquisition buffer, synchronized to sampling clock via K/K and timed by CQ/CQ echoes.

Use Value: Dual-edge DDR interface delivers 1.2 GB/s bandwidth - sustaining full-rate 1 GS/s sampling across 32-channel parallel acquisition paths.

Use Scenario: Deterministic motion control PLC requiring predictable memory access for servo loop execution and I/O mapping.

IC Role / Device Role / Timing Role: Low-jitter SRAM providing zero-wait-state instruction/data storage for real-time microcontroller with DDR-capable memory interface.

Use Value: DOFF-selectable 1-cycle DDR I mode guarantees sub-2 ns read latency for safety-critical interrupt response, while 2.5-cycle mode optimizes throughput.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2268XV18 Same architecture, 2M × 18 organization; identical pinout except BWS[1:0] only; lower density per chip but wider 18-bit interface Better suited for 18-bit bus systems or where depth expansion is preferred over width Select when system bus width is 18-bit or when using multiple chips for >36-bit width with independent control
AS7C33600B-15JIN Asynchronous 36-Mbit SRAM (1M × 36); no DDR, no ODT, no echo clocks; 15 ns access, 3.3 V only Applicable only in non-burst, low-frequency control-plane memory where timing predictability outweighs bandwidth Choose only for cost-sensitive, non-high-speed applications lacking DDR infrastructure or clock distribution capability

Compared with CY7C2270XV18, CY7C2268XV18 offers identical timing and features but narrower 18-bit interface and higher depth - ideal for bus-constrained designs; AS7C33600B-15JIN lacks DDR, ODT, and echo clocks entirely, making it incompatible for high-speed burst applications despite matching density.

Availability

CY7C2270XV18 is available at Aetrix Electronics and suitable for high-bandwidth packet buffering, telecom line card memory subsystems, and industrial real-time controller cache applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C2270XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the full portfolio of high-performance memory and interface products originally developed by Cypress.

CY7C2270XV18 belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in networking, test equipment, and real-time embedded systems.

FAQ

What is the function of the DOFF pin on CY7C2270XV18?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This pin is sampled at power-up and remains static during operation - it is not dynamically switchable mid-operation.

Can CY7C2270XV18 be used without external termination resistors?

Yes - its on-die termination (ODT) supports DQ[35:0], BWS[3:0], and K/K inputs. When enabled via ODT pin and calibrated via ZQ, it replaces up to 44 external 50 Ω resistors. ODT is automatically disabled during read cycles and active only during writes, minimizing power consumption.

How does the QVLD signal improve system timing margin?

QVLD is edge-aligned with CQ and CQ echo clocks and asserts precisely during the valid window of Q[35:0] output data. This eliminates setup/hold uncertainty in FPGA or ASIC capture logic, allowing designers to use simple register-based sampling instead of complex dynamic phase alignment circuits.

Is CY7C2270XV18 pin-compatible with CY7C2268XV18?

No - although both use the same 165-ball FBGA package and share most signal names, CY7C2270XV18 has BWS[3:0] and DQ[35:0], while CY7C2268XV18 uses BWS[1:0] and DQ[17:0]. Pin assignments differ in rows C, D, E, F, G, J, K, L, M, N, and P; direct replacement requires PCB redesign.

CY7C2270XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2270XV18-600BZXC FAQ

1.How can I place an order for CY7C2270XV18-600BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2270XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2270XV18-600BZXC reliable?

The price and inventory of CY7C2270XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2270XV18-600BZXC is usually 5 days.

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CY7C2270XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2270XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2270XV18-600BZXC?

For technical support, including CY7C2270XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2270XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C2270XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2270XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2270XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2270XV18-600BZXC?

All CY7C2270XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2270XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2270XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C2270XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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