Cypress Semiconductor Corp CY7C2270XV18-600BZXC
- Part No.:
- CY7C2270XV18-600BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2270XV18-600BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:105
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Product details
Overview
CY7C2270XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous pipelined DDR II+ Xtreme SRAM configured as 1M × 36, operating at up to 600 MHz clock frequency with 2.5-cycle read latency when DOFF is HIGH, featuring on-die termination (ODT), echo clocks (CQ/CQ), and QVLD data-valid indicator - deployed in high-bandwidth networking line cards and packet buffering subsystems.
For engineers reviewing the CY7C2270XV18 datasheet, CY7C2270XV18 pinout, CY7C2270XV18 application, or CY7C2270XV18 equivalent, key selection criteria include its 1M × 36 organization, 1.8 V core / 1.4–1.6 V I/O supply compatibility, HSTL I/O interface, 165-ball FBGA package, and dual-clock DDR timing architecture supporting precise data capture in burst-oriented memory systems.
Technical Context
This SRAM implements a two-word burst architecture with synchronous pipelined addressing: addresses are latched on alternate rising edges of K/K, while write data is registered on both K and K rising edges. Read data is driven on both K and K rising edges, delivering 36-bit words per burst cycle.
The device integrates a PLL for accurate data placement, supports programmable ODT for DQ/BWS/K/K inputs, and uses ZQ calibration to tune output impedance to system bus requirements. Echo clocks CQ/CQ are free-running and edge-aligned with K/K, enabling deterministic data capture without external strobes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 36 Mbit (1M × 36), enabling single-chip 36-bit wide memory interfaces without depth expansion |
| Max Clock Frequency | 600 MHz - supports 1.2 Gbps DDR data rate (1200 MT/s) with 2.5-cycle read latency |
| Core / I/O Voltage | VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.6 V - allows interoperability with 1.5 V I/O systems and reduces power vs. 2.5 V SRAMs |
| Interface Standard | HSTL Class I inputs and variable-drive HSTL outputs - ensures signal integrity at >600 MHz with controlled slew rates |
| On-Die Termination | ODT supported on DQ[35:0], BWS[3:0], K/K - eliminates 24+ external 50 Ω resistors, saving PCB area and routing complexity |
| Timing Control | DOFF pin selects latency mode: HIGH → 2.5-cycle DDR II+, LOW → 1-cycle DDR I - enables backward compatibility in legacy designs |
| Valid Data Indicator | QVLD output edge-aligned with CQ/CQ - provides unambiguous data validity window for FPGA/ASIC capture logic |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads; tri-stated on deselect |
| K / K | Differential clock inputs | Rising edges control all synchronous operations; K used for address/control latching, both used for data transfer timing |
| CQ / CQ | Output echo clocks | Free-running, K-synchronized clocks aligned to Q[35:0] valid windows - eliminate need for external capture strobes |
| QVLD | Valid data indicator | Asserted synchronously with CQ/CQ rising edges to mark exact duration of valid output data |
| ODT | On-die termination select | Configures ODT resistance range (RQ/3.33 or RQ/1.66) during power-up; default HIGH enables high-range mode |
| ZQ | Impedance calibration reference | Connected to external resistor to ground; sets output driver impedance to 0.2 × RQ for matched bus termination |
| LD | Load enable | Latches address and R/W state on K rising edge; initiates burst sequence - required for every access |
| BWS[3:0] | Byte write select | Four active-low signals controlling 9-bit byte lanes (D[8:0] to D[35:27]); enables partial writes without read-modify-write overhead |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% vs. single-word SRAMs - lowers EMI and simplifies controller address generation logic |
| Programmable 2.5/1-cycle read latency | DOFF pin enables runtime selection between DDR II+ performance and DDR I compatibility - supports multi-generation system upgrades |
| Integrated PLL and echo clocks | Eliminates need for external delay-locked loops or phase-matching circuitry - improves timing margin in high-speed backplane designs |
| HSTL I/O with variable drive strength | Ensures clean signal edges across varying trace lengths and loads - avoids overshoot/undershoot without external series resistors |
| JTAG 1149.1 boundary scan | Enables in-system test and debug of memory interconnects - critical for validating high-density BGA routing in telecom modules |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory Subsystem |
|---|---|
|
Use Scenario: High-throughput Ethernet switch fabric requiring low-latency, burst-capable buffer memory for frame reordering and congestion management. IC Role / Device Role / Timing Role: Primary 36-bit wide packet buffer SRAM interfaced directly to switch ASIC's DDR memory controller with precise echo-clock–driven data capture. Use Value: 2.5-cycle latency and QVLD signaling enable deterministic 600 MHz operation without timing closure penalties in 10G/25G line-rate designs. |
Use Scenario: Modular optical transport platform needing reliable, high-bandwidth memory for real-time traffic shaping and header processing. IC Role / Device Role / Timing Role: Synchronous burst SRAM serving as shared buffer between multiple DSPs and network processors via HSTL-bus interconnect. Use Value: On-die termination eliminates 36 external termination resistors per device - reducing BOM cost and improving signal integrity on dense 16-layer backplanes. |
| Test Equipment Data Capture Buffer | Industrial Real-Time Controller Cache |
|
Use Scenario: High-speed digital oscilloscope capturing multi-gigasample waveforms into deep memory with minimal dead time. IC Role / Device Role / Timing Role: Burst-mode SRAM acting as first-level acquisition buffer, synchronized to sampling clock via K/K and timed by CQ/CQ echoes. Use Value: Dual-edge DDR interface delivers 1.2 GB/s bandwidth - sustaining full-rate 1 GS/s sampling across 32-channel parallel acquisition paths. |
Use Scenario: Deterministic motion control PLC requiring predictable memory access for servo loop execution and I/O mapping. IC Role / Device Role / Timing Role: Low-jitter SRAM providing zero-wait-state instruction/data storage for real-time microcontroller with DDR-capable memory interface. Use Value: DOFF-selectable 1-cycle DDR I mode guarantees sub-2 ns read latency for safety-critical interrupt response, while 2.5-cycle mode optimizes throughput. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2268XV18 | Same architecture, 2M × 18 organization; identical pinout except BWS[1:0] only; lower density per chip but wider 18-bit interface | Better suited for 18-bit bus systems or where depth expansion is preferred over width | Select when system bus width is 18-bit or when using multiple chips for >36-bit width with independent control |
| AS7C33600B-15JIN | Asynchronous 36-Mbit SRAM (1M × 36); no DDR, no ODT, no echo clocks; 15 ns access, 3.3 V only | Applicable only in non-burst, low-frequency control-plane memory where timing predictability outweighs bandwidth | Choose only for cost-sensitive, non-high-speed applications lacking DDR infrastructure or clock distribution capability |
Compared with CY7C2270XV18, CY7C2268XV18 offers identical timing and features but narrower 18-bit interface and higher depth - ideal for bus-constrained designs; AS7C33600B-15JIN lacks DDR, ODT, and echo clocks entirely, making it incompatible for high-speed burst applications despite matching density.
Availability
CY7C2270XV18 is available at Aetrix Electronics and suitable for high-bandwidth packet buffering, telecom line card memory subsystems, and industrial real-time controller cache applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C2270XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the full portfolio of high-performance memory and interface products originally developed by Cypress.
CY7C2270XV18 belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in networking, test equipment, and real-time embedded systems.
FAQ
What is the function of the DOFF pin on CY7C2270XV18?
The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This pin is sampled at power-up and remains static during operation - it is not dynamically switchable mid-operation.
Can CY7C2270XV18 be used without external termination resistors?
Yes - its on-die termination (ODT) supports DQ[35:0], BWS[3:0], and K/K inputs. When enabled via ODT pin and calibrated via ZQ, it replaces up to 44 external 50 Ω resistors. ODT is automatically disabled during read cycles and active only during writes, minimizing power consumption.
How does the QVLD signal improve system timing margin?
QVLD is edge-aligned with CQ and CQ echo clocks and asserts precisely during the valid window of Q[35:0] output data. This eliminates setup/hold uncertainty in FPGA or ASIC capture logic, allowing designers to use simple register-based sampling instead of complex dynamic phase alignment circuits.
Is CY7C2270XV18 pin-compatible with CY7C2268XV18?
No - although both use the same 165-ball FBGA package and share most signal names, CY7C2270XV18 has BWS[3:0] and DQ[35:0], while CY7C2268XV18 uses BWS[1:0] and DQ[17:0]. Pin assignments differ in rows C, D, E, F, G, J, K, L, M, N, and P; direct replacement requires PCB redesign.
CY7C2270XV18-600BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 600 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2270XV18-600BZXC FAQ
1.How can I place an order for CY7C2270XV18-600BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2270XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2270XV18-600BZXC reliable?
The price and inventory of CY7C2270XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2270XV18-600BZXC is usually 5 days.
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CY7C2270XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2270XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2270XV18-600BZXC?
For technical support, including CY7C2270XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2270XV18-600BZXC requirements.
6.How does Aetrix verify that CY7C2270XV18-600BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2270XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2270XV18-600BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2270XV18-600BZXC?
All CY7C2270XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2270XV18-600BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2270XV18-600BZXC part is unused and in its original packaging.
Return procedure for CY7C2270XV18-600BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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