Cypress Semiconductor Corp CY7C25422KV18-333BZXC
- Part No.:
- CY7C25422KV18-333BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25422KV18-333BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:893
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Product details
Overview
CY7C25422KV18-333BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 333 MHz clock frequency, 2.0-cycle read latency (DOFF = HIGH), on-die termination (ODT) for D[17:0]/BWS[1:0]/K/K inputs, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 666 MT/s DDR data rates on both ports and supports depth expansion via RPS/WPS in high-bandwidth networking line cards.
For engineers reviewing the CY7C25422KV18-333BZXC datasheet, CY7C25422KV18-333BZXC pinout, CY7C25422KV18-333BZXC application, or CY7C25422KV18-333BZXC equivalent, key selection criteria include burst-2 QDR II+ timing compliance, HSTL I/O compatibility, ODT impedance configuration via ZQ/ODT pins, and PLL-enabled 2-cycle vs. DOFF-disabled 1-cycle latency modes.
Technical Context
The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 21-bit address bus. Read and write operations are initiated on rising edges of complementary K/K clocks, with echo clocks CQ/CQ aligned to simplify high-speed data capture.
It uses a Phase-Locked Loop (PLL) for precise data placement and supports two latency modes: 2.0-cycle read latency with DOFF = HIGH (QDR II+ mode) and 1-cycle read latency with DOFF = LOW (QDR I mode). Core VDD = 1.8 V ± 0.1 V and VDDQ = 1.4 V to 1.8 V enable dual-voltage operation with HSTL I/O buffers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | 2.0 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned systems |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports 1.5 V or 1.8 V system interfaces |
| On-Die Termination | Supported on D[17:0], BWS[1:0], K/K - eliminates external resistors, reduces PCB routing complexity |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in telecom modules |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 666 MT/s |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edges of K/K; supports byte-write via BWS[1:0] for partial-word updates |
| Q[17:0] | Synchronous read data output | Driven on rising edges of K/K; QVLD edge-aligned with CQ/CQ confirms valid data window |
| RPS / WPS | Read/Write port select | Active-LOW enables independent depth expansion; allows concurrent port control without bus contention |
| K / K | Complementary input clocks | Rising-edge-triggered for all synchronous inputs; K drives read logic, K drives write logic |
| CQ / CQ | Echo clocks | Free-running, phase-aligned copies of K/K - used by FPGA/ASIC receivers for source-synchronous capture |
| ODT / ZQ | On-die termination control | ODT selects termination range (RQ/3.33 or RQ/1.66); ZQ connects to external resistor for output impedance tuning (0.2 × RQ) |
| DOFF | PLL disable input | LOW disables PLL → QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables QDR II+ mode (2-cycle, ≤333 MHz) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround delays and contention - enables true concurrent read/write at full bandwidth |
| Two-word burst architecture | Transfers two 18-bit words per address cycle - halves effective address bus frequency versus single-word devices |
| On-die termination (ODT) | Configurable termination for D[17:0], BWS[1:0], K/K - removes 36+ external resistors and saves >12 mm² PCB area |
| Echo clocks (CQ/CQ) | Source-synchronous timing references aligned to K/K - simplifies PCB layout and timing closure in >500 MHz systems |
| Programmable read latency | DOFF pin selects between 2-cycle (QDR II+) and 1-cycle (QDR I) modes - enables backward compatibility and design reuse |
Applications
| High-Speed Network Line Cards | Packet Buffering in Switch ASICs |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking first-level buffer with simultaneous header read and payload write. Use Value: 666 MT/s DDR throughput per port sustains full line-rate packet processing without stalls or arbitration delay. |
Use Scenario: Temporarily holding fragmented packets during cut-through switching in multi-port switch ASICs. IC Role / Device Role / Timing Role: Burst-2 QDR II+ SRAM providing low-latency, deterministic access for parallel lookup and forwarding engines. Use Value: 2.0-cycle read latency synchronized to system clock enables tight pipeline alignment with TCAM and forwarding logic. |
| Telecom Baseband Processing | High-Frequency Trading Systems |
|
Use Scenario: Buffering IQ samples between digital downconverters and FFT processors in LTE/5G baseband units. IC Role / Device Role / Timing Role: Synchronous pipelined memory interfacing directly with FPGA-based DSP blocks using HSTL I/O. Use Value: HSTL-compatible 1.4–1.8 V VDDQ supports mixed-voltage FPGA I/O banks while maintaining signal integrity at 333 MHz. |
Use Scenario: Storing real-time market order book snapshots with sub-microsecond access in ultra-low-latency trading hardware. IC Role / Device Role / Timing Role: Deterministic-latency SRAM accessed via dedicated read/write ports to avoid arbitration jitter in feed handlers. Use Value: DOFF-configurable latency allows trade-off between speed (2-cycle @ 333 MHz) and determinism (1-cycle @ 167 MHz) based on system timing budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (2M × 18), 250 MHz max, no ODT, LVDS I/O, 165-ball FBGA | Lacks ODT and echo clocks; requires external termination; lower density and bandwidth | Select when legacy LVDS interface or lower cost outweighs need for ODT and 333 MHz operation |
| ISSI IS61WV102418BLL-15BLI | 18-Mbit (512K × 36), 15 ns async access, CMOS I/O, 100-pin TQFP | Asynchronous, single-port, no burst or DDR; incompatible timing model and interface | Only suitable for non-critical buffering where QDR timing, concurrency, and bandwidth are not required |
Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C25422KV18-333BZXC uniquely delivers 72-Mbit density, 333 MHz DDR throughput, integrated ODT, and echo-clock–assisted timing - making it the only viable option for new designs requiring QDR II+–compliant, high-concurrency packet buffering.
Availability
CY7C25422KV18-333BZXC is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband units, packet-switching ASICs, and ultra-low-latency trading hardware requiring stable component supply and long-term obsolescence management.
Supply support for CY7C25422KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and system-level integration.
This device belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, high-throughput data buffering in packet-processing and DSP-intensive systems where concurrent read/write and precise timing are mandatory.
FAQ
What is the function of the DOFF pin?
The DOFF pin controls the internal PLL: when pulled HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency and up to 333 MHz clock frequency; when pulled LOW, the PLL is disabled and the device reverts to QDR I mode with 1-cycle latency and maximum 167 MHz operation. This provides backward compatibility and flexibility in timing-critical designs.
How does On-Die Termination (ODT) work on this SRAM?
ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor. ODT pin state selects the range: LOW sets RQ/3.33 (175–350 Ω), HIGH sets RQ/1.66 (175–250 Ω). This eliminates discrete termination resistors, reduces board area, and improves signal integrity at 666 MT/s without altering layout routing.
Can CY7C25422KV18-333BZXC be used with 1.5 V VDDQ?
Yes - the device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. HSTL I/O buffers are designed for this range, and DC/AC electrical characteristics in the datasheet (Rev. *D, p.19–20) are validated across 1.4–1.8 V, ensuring reliable signaling with 1.5 V FPGA I/O banks.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, source-synchronous output clocks aligned to K and K, respectively. They provide timing references for external receivers (e.g., FPGA input registers) to capture Q[17:0] data without requiring complex deskew circuitry. Their phase relationship to K/K is guaranteed per AC switching specs (p.22), enabling robust >500 MHz data capture.
CY7C25422KV18-333BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25422KV18-333BZXC FAQ
1.How can I place an order for CY7C25422KV18-333BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25422KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25422KV18-333BZXC reliable?
The price and inventory of CY7C25422KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25422KV18-333BZXC is usually 5 days.
3.What payment methods are accepted for CY7C25422KV18-333BZXC?
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CY7C25422KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25422KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25422KV18-333BZXC?
For technical support, including CY7C25422KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25422KV18-333BZXC requirements.
6.How does Aetrix verify that CY7C25422KV18-333BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C25422KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25422KV18-333BZXC meets industry standards.
7.What is the process for return or replacement of CY7C25422KV18-333BZXC?
All CY7C25422KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25422KV18-333BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25422KV18-333BZXC part is unused and in its original packaging.
Return procedure for CY7C25422KV18-333BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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