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Cypress Semiconductor Corp CY7C25422KV18-333BZXC

Part No.:
CY7C25422KV18-333BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25422KV18-333BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:893

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Product details

Overview

CY7C25422KV18-333BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 333 MHz clock frequency, 2.0-cycle read latency (DOFF = HIGH), on-die termination (ODT) for D[17:0]/BWS[1:0]/K/K inputs, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 666 MT/s DDR data rates on both ports and supports depth expansion via RPS/WPS in high-bandwidth networking line cards.

For engineers reviewing the CY7C25422KV18-333BZXC datasheet, CY7C25422KV18-333BZXC pinout, CY7C25422KV18-333BZXC application, or CY7C25422KV18-333BZXC equivalent, key selection criteria include burst-2 QDR II+ timing compliance, HSTL I/O compatibility, ODT impedance configuration via ZQ/ODT pins, and PLL-enabled 2-cycle vs. DOFF-disabled 1-cycle latency modes.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 21-bit address bus. Read and write operations are initiated on rising edges of complementary K/K clocks, with echo clocks CQ/CQ aligned to simplify high-speed data capture.

It uses a Phase-Locked Loop (PLL) for precise data placement and supports two latency modes: 2.0-cycle read latency with DOFF = HIGH (QDR II+ mode) and 1-cycle read latency with DOFF = LOW (QDR I mode). Core VDD = 1.8 V ± 0.1 V and VDDQ = 1.4 V to 1.8 V enable dual-voltage operation with HSTL I/O buffers.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 organization)
Max Clock Frequency 333 MHz - enables 666 MT/s DDR throughput per port
Read Latency 2.0 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned systems
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports 1.5 V or 1.8 V system interfaces
On-Die Termination Supported on D[17:0], BWS[1:0], K/K - eliminates external resistors, reduces PCB routing complexity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in telecom modules
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 666 MT/s

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Latched on rising edges of K/K; supports byte-write via BWS[1:0] for partial-word updates
Q[17:0] Synchronous read data output Driven on rising edges of K/K; QVLD edge-aligned with CQ/CQ confirms valid data window
RPS / WPS Read/Write port select Active-LOW enables independent depth expansion; allows concurrent port control without bus contention
K / K Complementary input clocks Rising-edge-triggered for all synchronous inputs; K drives read logic, K drives write logic
CQ / CQ Echo clocks Free-running, phase-aligned copies of K/K - used by FPGA/ASIC receivers for source-synchronous capture
ODT / ZQ On-die termination control ODT selects termination range (RQ/3.33 or RQ/1.66); ZQ connects to external resistor for output impedance tuning (0.2 × RQ)
DOFF PLL disable input LOW disables PLL → QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables QDR II+ mode (2-cycle, ≤333 MHz)

Key Features

Feature Design Value
Separate read/write ports Eliminates data bus turnaround delays and contention - enables true concurrent read/write at full bandwidth
Two-word burst architecture Transfers two 18-bit words per address cycle - halves effective address bus frequency versus single-word devices
On-die termination (ODT) Configurable termination for D[17:0], BWS[1:0], K/K - removes 36+ external resistors and saves >12 mm² PCB area
Echo clocks (CQ/CQ) Source-synchronous timing references aligned to K/K - simplifies PCB layout and timing closure in >500 MHz systems
Programmable read latency DOFF pin selects between 2-cycle (QDR II+) and 1-cycle (QDR I) modes - enables backward compatibility and design reuse

Applications

High-Speed Network Line Cards Packet Buffering in Switch ASICs

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking first-level buffer with simultaneous header read and payload write.

Use Value: 666 MT/s DDR throughput per port sustains full line-rate packet processing without stalls or arbitration delay.

Use Scenario: Temporarily holding fragmented packets during cut-through switching in multi-port switch ASICs.

IC Role / Device Role / Timing Role: Burst-2 QDR II+ SRAM providing low-latency, deterministic access for parallel lookup and forwarding engines.

Use Value: 2.0-cycle read latency synchronized to system clock enables tight pipeline alignment with TCAM and forwarding logic.

Telecom Baseband Processing High-Frequency Trading Systems

Use Scenario: Buffering IQ samples between digital downconverters and FFT processors in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Synchronous pipelined memory interfacing directly with FPGA-based DSP blocks using HSTL I/O.

Use Value: HSTL-compatible 1.4–1.8 V VDDQ supports mixed-voltage FPGA I/O banks while maintaining signal integrity at 333 MHz.

Use Scenario: Storing real-time market order book snapshots with sub-microsecond access in ultra-low-latency trading hardware.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM accessed via dedicated read/write ports to avoid arbitration jitter in feed handlers.

Use Value: DOFF-configurable latency allows trade-off between speed (2-cycle @ 333 MHz) and determinism (1-cycle @ 167 MHz) based on system timing budget.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 250 MHz max, no ODT, LVDS I/O, 165-ball FBGA Lacks ODT and echo clocks; requires external termination; lower density and bandwidth Select when legacy LVDS interface or lower cost outweighs need for ODT and 333 MHz operation
ISSI IS61WV102418BLL-15BLI 18-Mbit (512K × 36), 15 ns async access, CMOS I/O, 100-pin TQFP Asynchronous, single-port, no burst or DDR; incompatible timing model and interface Only suitable for non-critical buffering where QDR timing, concurrency, and bandwidth are not required

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C25422KV18-333BZXC uniquely delivers 72-Mbit density, 333 MHz DDR throughput, integrated ODT, and echo-clock–assisted timing - making it the only viable option for new designs requiring QDR II+–compliant, high-concurrency packet buffering.

Availability

CY7C25422KV18-333BZXC is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband units, packet-switching ASICs, and ultra-low-latency trading hardware requiring stable component supply and long-term obsolescence management.

Supply support for CY7C25422KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and system-level integration.

This device belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, high-throughput data buffering in packet-processing and DSP-intensive systems where concurrent read/write and precise timing are mandatory.

FAQ

What is the function of the DOFF pin?

The DOFF pin controls the internal PLL: when pulled HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency and up to 333 MHz clock frequency; when pulled LOW, the PLL is disabled and the device reverts to QDR I mode with 1-cycle latency and maximum 167 MHz operation. This provides backward compatibility and flexibility in timing-critical designs.

How does On-Die Termination (ODT) work on this SRAM?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor. ODT pin state selects the range: LOW sets RQ/3.33 (175–350 Ω), HIGH sets RQ/1.66 (175–250 Ω). This eliminates discrete termination resistors, reduces board area, and improves signal integrity at 666 MT/s without altering layout routing.

Can CY7C25422KV18-333BZXC be used with 1.5 V VDDQ?

Yes - the device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. HSTL I/O buffers are designed for this range, and DC/AC electrical characteristics in the datasheet (Rev. *D, p.19–20) are validated across 1.4–1.8 V, ensuring reliable signaling with 1.5 V FPGA I/O banks.

What is the role of CQ and CQ echo clocks?

CQ and CQ are free-running, source-synchronous output clocks aligned to K and K, respectively. They provide timing references for external receivers (e.g., FPGA input registers) to capture Q[17:0] data without requiring complex deskew circuitry. Their phase relationship to K/K is guaranteed per AC switching specs (p.22), enabling robust >500 MHz data capture.

CY7C25422KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25422KV18-333BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C25422KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C25422KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25422KV18-333BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C25422KV18-333BZXC?

For technical support, including CY7C25422KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25422KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C25422KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C25422KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25422KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C25422KV18-333BZXC?

All CY7C25422KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25422KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25422KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C25422KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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