Cypress Semiconductor Corp CY7C25422KV18-333BZXI
- Part No.:
- CY7C25422KV18-333BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25422KV18-333BZXI.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:662
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Product details
Overview
CY7C25422KV18-333BZXI from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with two-word burst architecture, 2.0-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR interfaces operating at 666 MHz data rate on a 333 MHz clock, 1.8 V core supply, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. Used in high-bandwidth networking line cards for packet buffering.
For engineers reviewing the CY7C25422KV18-333BZXI datasheet, CY7C25422KV18-333BZXI pinout, CY7C25422KV18-333BZXI application, or CY7C25422KV18-333BZXI equivalent, key selection criteria include 333 MHz maximum clock frequency, HSTL I/O compatibility, ODT support on D[17:0]/BWS[1:0]/K/K inputs, echo clock (CQ/CQ) timing alignment, and DOFF-controlled latency mode switching between QDR I (1-cycle) and QDR II+ (2-cycle) operation.
Technical Context
The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 21-bit address bus. Each port uses dedicated DDR interfaces synchronized to K (positive) and K (negative) clocks, with all data transfers referenced to rising edges only.
It integrates a PLL for precise data placement, supports depth expansion via RPS/WPS control, and provides QVLD for cycle-accurate output validity indication. ODT impedance range is selected by the ODT pin state during power-up, calibrated against ZQ-connected resistor values (175–350 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 configuration) |
| Maximum Clock Frequency | 333 MHz - enables 1.332 GB/s peak bandwidth with DDR x2 burst |
| Read Latency | 2.0 clock cycles when DOFF = HIGH; 1.0 cycle when DOFF = LOW (QDR I mode) |
| Supply Voltages | VDD = 1.8 V ± 0.1 V (core); VDDQ = 1.4 V to 1.8 V (I/O) - supports dual-voltage system integration |
| I/O Standard | HSTL Class I inputs with variable-drive HSTL outputs - ensures signal integrity at 666 MHz data rate |
| On-Die Termination | Supported on D[17:0], BWS[1:0], K, K - eliminates external 50 Ω resistors and reduces PCB routing complexity |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - industrial-grade thermal profile and board-level reliability |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Sampled on rising edges of K/K; enables full 18-bit parallel writes per cycle |
| Q[17:0] | Synchronous read data output | Drives valid data aligned to CQ/CQ; tristated automatically when RPS deasserted |
| RPS / WPS | Read/Write port select (active LOW) | Enables concurrent read/write operations; controls port arbitration without bus turnaround |
| BWS[1:0] | Byte write select (active LOW) | BWS0 selects D[8:0]; BWS1 selects D[17:9] - allows partial-word updates without read-modify-write |
| K / K | Positive/negative input clocks | Rising edges drive all synchronous operations; K used for read timing, K for write timing |
| CQ / CQ | Echo clocks (output) | Free-running, edge-aligned copies of K/K - simplify high-speed data capture in FPGA/ASIC receivers |
| QVLD | Valid data indicator | Asserted synchronously with first valid Q[17:0] word - eliminates need for fixed delay-based sampling |
| ODT | On-die termination control | Selects ODT resistance range (RQ/3.33 or RQ/1.66) based on ZQ calibration resistor value |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Delivers two sequential 18-bit words per access - halves required address transitions vs. single-word devices |
| Separate read/write ports | Eliminates data bus turnaround delays - enables true concurrent read/write without arbitration overhead |
| Programmable read latency | DOFF pin switches between 2-cycle (QDR II+) and 1-cycle (QDR I) modes - supports legacy timing migration |
| Integrated PLL | Ensures sub-cycle data placement accuracy - critical for stable 666 MHz DDR interface timing margins |
| JTAG 1149.1 compliance | Enables boundary scan testing and in-system programming - supports production test and debug workflows |
Applications
| High-Speed Network Switching | Telecom Line Cards |
|---|---|
|
Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as low-latency, deterministic first-level packet buffer with concurrent ingress/egress access. Use Value: 333 MHz clock + 2-word burst delivers 1.332 GB/s sustained throughput while eliminating bus turnaround penalties seen in single-port SRAMs. |
Use Scenario: Storing time-division multiplexed (TDM) voice frames in carrier-grade optical transport equipment. IC Role / Device Role / Timing Role: Synchronous pipeline memory providing jitter-free frame storage with precise echo-clock-aligned readout. Use Value: CQ/CQ echo clocks enable FPGA receiver logic to sample Q[17:0] with zero setup/hold violation at 666 MHz DDR rate. |
| Baseband Processing Units | Test & Measurement Equipment |
|
Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP in 4G/5G radio units. IC Role / Device Role / Timing Role: High-bandwidth memory bridge with ODT-enabled signal integrity for 1.8 V/1.5 V mixed-voltage backplanes. Use Value: On-die termination on D[17:0] and BWS[1:0] removes 36 external 50 Ω resistors - reduces PCB layer count and layout risk. |
Use Scenario: Capturing high-resolution waveform snapshots in digital oscilloscopes with >1 GS/s sampling. IC Role / Device Role / Timing Role: Burst-mode acquisition memory supporting simultaneous trigger capture and display refresh via independent ports. Use Value: QVLD pin provides cycle-exact validity flag - eliminates need for fixed-delay FIFOs or complex strobe recovery circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (2M × 18), 100 MHz max clock, LVDS I/O, no ODT, 1-cycle latency only | Limited to lower bandwidth systems; requires external termination and differential routing | Choose when cost-sensitive designs tolerate 50% lower bandwidth and can accommodate LVDS layout constraints |
| ISSI IS61WV102418BLL-15BLI | 18-Mbit (512K × 36), 15 ns async access, CMOS I/O, no burst or DDR capability | Not suitable for concurrent high-speed streaming; lacks echo clocks and QVLD | Use only in legacy asynchronous control-plane buffers where timing margin is non-critical |
Compared with IDT72T3615L10BG and ISSI IS61WV102418BLL-15BLI, CY7C25422KV18-333BZXI uniquely delivers 72-Mbit density with 333 MHz DDR timing, integrated ODT, and programmable latency - making it the sole option for new 10G+ packet processing designs requiring deterministic 2-cycle burst behavior.
Availability
CY7C25422KV18-333BZXI is available at Aetrix Electronics and suitable for high-speed network switching, telecom line cards, baseband processing units, and test & measurement equipment requiring stable component supply across multi-year production cycles.
Supply support for CY7C25422KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with focus on signal integrity and system-level integration.
The CY7C25422KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency packet buffering in multi-gigabit networking infrastructure where concurrent read/write bandwidth and timing predictability are critical.
FAQ
What is the function of the DOFF pin?
The DOFF pin controls the internal PLL operation: when pulled HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency; when pulled LOW (to VSS), it disables the PLL and reverts to QDR I timing with 1.0-cycle latency and reduced maximum frequency (167 MHz). This allows backward compatibility with legacy timing controllers without hardware redesign.
How does On-Die Termination (ODT) work on this SRAM?
ODT applies programmable termination resistance to D[17:0], BWS[1:0], K, and K inputs using an internal resistor network calibrated against the ZQ pin's external reference resistor. The ODT pin selects between two ranges: LOW sets RODT ≈ RQ/3.33 (175–350 Ω), HIGH sets RODT ≈ RQ/1.66 (175–250 Ω), enabling impedance matching without external components.
Can CY7C25422KV18-333BZXI operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. This allows interoperability with 1.5 V HSTL-compatible FPGAs and ASICs while maintaining full 333 MHz performance and signal integrity, as confirmed in the DC Electrical Characteristics table (Rev. *D, page 19).
What is the role of the QVLD signal in system timing?
QVLD is a synchronous output that asserts coincident with the first valid word of each two-word burst on Q[17:0]. It is edge-aligned to CQ/CQ, allowing receiving logic to latch data without fixed delay compensation or phase-locked loop-based deskew - reducing timing closure effort in high-speed FPGA interfaces.
CY7C25422KV18-333BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C25422KV18-333BZXI FAQ
1.How can I place an order for CY7C25422KV18-333BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25422KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25422KV18-333BZXI reliable?
The price and inventory of CY7C25422KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25422KV18-333BZXI is usually 5 days.
3.What payment methods are accepted for CY7C25422KV18-333BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25422KV18-333BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C25422KV18-333BZXI?
CY7C25422KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25422KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25422KV18-333BZXI?
For technical support, including CY7C25422KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25422KV18-333BZXI requirements.
6.How does Aetrix verify that CY7C25422KV18-333BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C25422KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25422KV18-333BZXI meets industry standards.
7.What is the process for return or replacement of CY7C25422KV18-333BZXI?
All CY7C25422KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25422KV18-333BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25422KV18-333BZXI part is unused and in its original packaging.
Return procedure for CY7C25422KV18-333BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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