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Cypress Semiconductor Corp CY7C25422KV18-333BZXI

Part No.:
CY7C25422KV18-333BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25422KV18-333BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:662

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Product details

Overview

CY7C25422KV18-333BZXI from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with two-word burst architecture, 2.0-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR interfaces operating at 666 MHz data rate on a 333 MHz clock, 1.8 V core supply, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. Used in high-bandwidth networking line cards for packet buffering.

For engineers reviewing the CY7C25422KV18-333BZXI datasheet, CY7C25422KV18-333BZXI pinout, CY7C25422KV18-333BZXI application, or CY7C25422KV18-333BZXI equivalent, key selection criteria include 333 MHz maximum clock frequency, HSTL I/O compatibility, ODT support on D[17:0]/BWS[1:0]/K/K inputs, echo clock (CQ/CQ) timing alignment, and DOFF-controlled latency mode switching between QDR I (1-cycle) and QDR II+ (2-cycle) operation.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 21-bit address bus. Each port uses dedicated DDR interfaces synchronized to K (positive) and K (negative) clocks, with all data transfers referenced to rising edges only.

It integrates a PLL for precise data placement, supports depth expansion via RPS/WPS control, and provides QVLD for cycle-accurate output validity indication. ODT impedance range is selected by the ODT pin state during power-up, calibrated against ZQ-connected resistor values (175–350 Ω).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Maximum Clock Frequency 333 MHz - enables 1.332 GB/s peak bandwidth with DDR x2 burst
Read Latency 2.0 clock cycles when DOFF = HIGH; 1.0 cycle when DOFF = LOW (QDR I mode)
Supply Voltages VDD = 1.8 V ± 0.1 V (core); VDDQ = 1.4 V to 1.8 V (I/O) - supports dual-voltage system integration
I/O Standard HSTL Class I inputs with variable-drive HSTL outputs - ensures signal integrity at 666 MHz data rate
On-Die Termination Supported on D[17:0], BWS[1:0], K, K - eliminates external 50 Ω resistors and reduces PCB routing complexity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - industrial-grade thermal profile and board-level reliability

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Sampled on rising edges of K/K; enables full 18-bit parallel writes per cycle
Q[17:0] Synchronous read data output Drives valid data aligned to CQ/CQ; tristated automatically when RPS deasserted
RPS / WPS Read/Write port select (active LOW) Enables concurrent read/write operations; controls port arbitration without bus turnaround
BWS[1:0] Byte write select (active LOW) BWS0 selects D[8:0]; BWS1 selects D[17:9] - allows partial-word updates without read-modify-write
K / K Positive/negative input clocks Rising edges drive all synchronous operations; K used for read timing, K for write timing
CQ / CQ Echo clocks (output) Free-running, edge-aligned copies of K/K - simplify high-speed data capture in FPGA/ASIC receivers
QVLD Valid data indicator Asserted synchronously with first valid Q[17:0] word - eliminates need for fixed delay-based sampling
ODT On-die termination control Selects ODT resistance range (RQ/3.33 or RQ/1.66) based on ZQ calibration resistor value

Key Features

Feature Design Value
Two-word burst architecture Delivers two sequential 18-bit words per access - halves required address transitions vs. single-word devices
Separate read/write ports Eliminates data bus turnaround delays - enables true concurrent read/write without arbitration overhead
Programmable read latency DOFF pin switches between 2-cycle (QDR II+) and 1-cycle (QDR I) modes - supports legacy timing migration
Integrated PLL Ensures sub-cycle data placement accuracy - critical for stable 666 MHz DDR interface timing margins
JTAG 1149.1 compliance Enables boundary scan testing and in-system programming - supports production test and debug workflows

Applications

High-Speed Network Switching Telecom Line Cards

Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as low-latency, deterministic first-level packet buffer with concurrent ingress/egress access.

Use Value: 333 MHz clock + 2-word burst delivers 1.332 GB/s sustained throughput while eliminating bus turnaround penalties seen in single-port SRAMs.

Use Scenario: Storing time-division multiplexed (TDM) voice frames in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Synchronous pipeline memory providing jitter-free frame storage with precise echo-clock-aligned readout.

Use Value: CQ/CQ echo clocks enable FPGA receiver logic to sample Q[17:0] with zero setup/hold violation at 666 MHz DDR rate.

Baseband Processing Units Test & Measurement Equipment

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP in 4G/5G radio units.

IC Role / Device Role / Timing Role: High-bandwidth memory bridge with ODT-enabled signal integrity for 1.8 V/1.5 V mixed-voltage backplanes.

Use Value: On-die termination on D[17:0] and BWS[1:0] removes 36 external 50 Ω resistors - reduces PCB layer count and layout risk.

Use Scenario: Capturing high-resolution waveform snapshots in digital oscilloscopes with >1 GS/s sampling.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory supporting simultaneous trigger capture and display refresh via independent ports.

Use Value: QVLD pin provides cycle-exact validity flag - eliminates need for fixed-delay FIFOs or complex strobe recovery circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 100 MHz max clock, LVDS I/O, no ODT, 1-cycle latency only Limited to lower bandwidth systems; requires external termination and differential routing Choose when cost-sensitive designs tolerate 50% lower bandwidth and can accommodate LVDS layout constraints
ISSI IS61WV102418BLL-15BLI 18-Mbit (512K × 36), 15 ns async access, CMOS I/O, no burst or DDR capability Not suitable for concurrent high-speed streaming; lacks echo clocks and QVLD Use only in legacy asynchronous control-plane buffers where timing margin is non-critical

Compared with IDT72T3615L10BG and ISSI IS61WV102418BLL-15BLI, CY7C25422KV18-333BZXI uniquely delivers 72-Mbit density with 333 MHz DDR timing, integrated ODT, and programmable latency - making it the sole option for new 10G+ packet processing designs requiring deterministic 2-cycle burst behavior.

Availability

CY7C25422KV18-333BZXI is available at Aetrix Electronics and suitable for high-speed network switching, telecom line cards, baseband processing units, and test & measurement equipment requiring stable component supply across multi-year production cycles.

Supply support for CY7C25422KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with focus on signal integrity and system-level integration.

The CY7C25422KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency packet buffering in multi-gigabit networking infrastructure where concurrent read/write bandwidth and timing predictability are critical.

FAQ

What is the function of the DOFF pin?

The DOFF pin controls the internal PLL operation: when pulled HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency; when pulled LOW (to VSS), it disables the PLL and reverts to QDR I timing with 1.0-cycle latency and reduced maximum frequency (167 MHz). This allows backward compatibility with legacy timing controllers without hardware redesign.

How does On-Die Termination (ODT) work on this SRAM?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], K, and K inputs using an internal resistor network calibrated against the ZQ pin's external reference resistor. The ODT pin selects between two ranges: LOW sets RODT ≈ RQ/3.33 (175–350 Ω), HIGH sets RODT ≈ RQ/1.66 (175–250 Ω), enabling impedance matching without external components.

Can CY7C25422KV18-333BZXI operate with VDDQ = 1.5 V?

Yes - the device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. This allows interoperability with 1.5 V HSTL-compatible FPGAs and ASICs while maintaining full 333 MHz performance and signal integrity, as confirmed in the DC Electrical Characteristics table (Rev. *D, page 19).

What is the role of the QVLD signal in system timing?

QVLD is a synchronous output that asserts coincident with the first valid word of each two-word burst on Q[17:0]. It is edge-aligned to CQ/CQ, allowing receiving logic to latch data without fixed delay compensation or phase-locked loop-based deskew - reducing timing closure effort in high-speed FPGA interfaces.

CY7C25422KV18-333BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C25422KV18-333BZXI FAQ

1.How can I place an order for CY7C25422KV18-333BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C25422KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25422KV18-333BZXI reliable?

The price and inventory of CY7C25422KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25422KV18-333BZXI is usually 5 days.

3.What payment methods are accepted for CY7C25422KV18-333BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25422KV18-333BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C25422KV18-333BZXI?

CY7C25422KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25422KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25422KV18-333BZXI?

For technical support, including CY7C25422KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25422KV18-333BZXI requirements.

6.How does Aetrix verify that CY7C25422KV18-333BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C25422KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25422KV18-333BZXI meets industry standards.

7.What is the process for return or replacement of CY7C25422KV18-333BZXI?

All CY7C25422KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25422KV18-333BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25422KV18-333BZXI part is unused and in its original packaging.

Return procedure for CY7C25422KV18-333BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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