Cypress Semiconductor Corp CY7C25442KV18-300BZI
- Part No.:
- CY7C25442KV18-300BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25442KV18-300BZI.pdf
- Description:
- QDR SRAM, 2MX36, 0.45NS PBGA165
- Quantity:
- Payment:

- Shipping:

Inventory:1,582
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C25442KV18-300BZI from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 333 MHz operation, 2.0-cycle read latency, on-die termination (ODT), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers 666 MT/s DDR data transfer on both ports and supports 1.8 V core / 1.4–1.8 V I/O supply for high-bandwidth networking buffer applications.
For engineers reviewing the CY7C25442KV18-300BZI datasheet, CY7C25442KV18-300BZI pinout, CY7C25442KV18-300BZI application, or CY7C25442KV18-300BZI equivalent, key selection criteria include dual-port concurrency, ODT configuration via ODT/ZQ pins, DOFF-controlled latency mode (1-cycle vs. 2-cycle), and HSTL-compatible 36-bit × 2-word burst interface timing.
Technical Context
The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Each port uses rising-edge-triggered K/K clocks and echo clocks (CQ/CQ) for precise DDR capture, with all inputs and outputs registered to K or K edges.
It features a PLL for accurate data placement, JTAG 1149.1 test access, and programmable ODT ranges (175–350 Ω low range; 175–250 Ω high range) selected by the ODT pin at power-up. The DOFF pin configures read latency: HIGH enables QDR II+ 2.0-cycle mode; LOW reverts to QDR I 1-cycle mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | Configurable: 2.0 cycles (DOFF = HIGH) or 1.0 cycle (DOFF = LOW) |
| Supply Voltages | VDD = 1.8 V ± 0.1 V; VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system interfacing |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 666 MT/s |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external resistors for DQ/BWS/clock lines |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-pin-count memory |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit DDR input sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit DDR output edge-aligned with CQ/CQ; tristated when RPS is deasserted |
| RPS / WPS | Read/Write Port Select | Active-LOW control signals latched on K rising edge; enable independent port activation |
| A[19:0] | Multiplexed address input | 20-bit bus latched alternately on K (read) and K (write) rising edges for depth expansion |
| K / K | Dual input clocks | Rising-edge-triggered clocks for all synchronous operations; K used for read, K for write |
| CQ / CQ | Echo clocks | Free-running, K-synchronized outputs that simplify high-speed data capture timing |
| QVLD | Valid data indicator | Output pulse aligned with CQ/CQ edges indicating Q[35:0] data validity during read bursts |
| ODT | On-die termination select | Configures ODT resistance range at power-up; floating defaults to high-range (RQ/1.66) |
| ZQ | ODT calibration reference | Connects to precision external resistor (175–350 Ω) for impedance matching calibration |
| DOFF | Latency mode control | HIGH selects QDR II+ 2.0-cycle read latency; LOW selects QDR I 1.0-cycle mode |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces effective address bus frequency by 2× while maintaining full bandwidth - critical for FPGA-to-SRAM interconnects |
| Separate read/write data paths | Eliminates bidirectional bus turnaround delays and contention, enabling true concurrent read/write transactions |
| Programmable ODT with ZQ calibration | Removes need for 72 discrete termination resistors, saving PCB area and improving signal integrity at 666 MT/s |
| Configurable read latency (1.0 or 2.0 cycles) | Allows system-level trade-off between timing margin and pipeline efficiency without hardware change |
| JTAG 1149.1 boundary scan | Enables in-system testability and debug of high-speed memory interfaces without additional test fixtures |
Applications
| High-Speed Network Buffering | Packet Processing Engine Cache |
|---|---|
|
Use Scenario: Line-rate buffering in 10G/25G Ethernet switch ASICs where packet ingress/egress must be decoupled. IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking first-level packet buffer with independent read/write arbitration. Use Value: 666 MT/s DDR throughput per port sustains 48 Gbps aggregate bandwidth; ODT eliminates stub reflections on dense routing layers. |
Use Scenario: Temporary storage for header parsing and forwarding decision metadata in multi-core network processors. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by multiple processing pipelines. Use Value: 2.0-cycle latency mode provides deterministic timing for pipeline scheduling; DOFF pin allows runtime latency adjustment. |
| FPGA-Based Protocol Acceleration | Telecom Baseband Processing |
|
Use Scenario: Real-time protocol translation (e.g., TCP offload) using FPGA logic with tight timing closure requirements. IC Role / Device Role / Timing Role: Synchronous burst memory interfaced directly to FPGA I/O banks with HSTL compatibility. Use Value: Echo clocks (CQ/CQ) align with FPGA IDELAY/ODELAY primitives to achieve sub-100 ps setup/hold margins. |
Use Scenario: Channel estimation and equalization coefficient storage in LTE/5G baseband units requiring deterministic access. IC Role / Device Role / Timing Role: Burst-accessed coefficient RAM synchronized to symbol clock domain via K/K clocks. Use Value: Full data coherency ensures most recent coefficients are always available; 1.8 V core reduces dynamic power in dense RF modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-333BIN | Same 72-Mbit ×36 density, 333 MHz, but lacks ODT and echo clocks; uses SSTL-18 I/O | Requires external termination and tighter board layout control; no CQ/CQ simplification for FPGA capture | Prefer when cost sensitivity outweighs signal integrity complexity and ODT is not required |
| MT47H64M16HR-37E:H | DDR2 SDRAM (1 Gbit), higher density but asynchronous command interface and refresh overhead | Not suitable for deterministic low-latency burst access; introduces refresh-induced latency jitter | Choose only if sustained sequential bandwidth > capacity efficiency is primary requirement |
Compared with AS7C362000B-333BIN and MT47H64M16HR-37E:H, CY7C25442KV18-300BZI uniquely combines deterministic 2-cycle latency, integrated ODT, and echo-clock–assisted timing closure - making it optimal for FPGA-ASIC co-designs demanding zero-bus-turnaround concurrency and sub-nanosecond timing margin.
Availability
CY7C25442KV18-300BZI is available at Aetrix Electronics and suitable for high-speed network buffering, packet processing engine cache, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply across extended product lifecycles.
Supply support for CY7C25442KV18-300BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR® II+ SRAM portfolio, including legacy Cypress designs like the CY7C25442KV18 series.
This device belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking, telecom, and FPGA-accelerated computing.
FAQ
What is the function of the DOFF pin on CY7C25442KV18-300BZI?
The DOFF (Disable Off) pin configures the device's read latency mode. When asserted HIGH, it enables QDR II+ operation with 2.0-cycle read latency. When pulled LOW or tied to VSS, it reverts to QDR I mode with 1.0-cycle latency. This pin is sampled at power-up and remains latched until reset, allowing system-level latency tuning without firmware changes.
How does on-die termination (ODT) work on this SRAM, and what external components are needed?
ODT is enabled via the ODT pin and calibrated using an external precision resistor (175–350 Ω) connected to the ZQ pin. It applies matched termination to D[35:0], BWS[3:0], and K/K inputs, eliminating the need for 44 discrete 50 Ω resistors. No pull-ups/downs or series resistors are required on those lines - only the ZQ resistor and proper VDDQ decoupling.
Can CY7C25442KV18-300BZI operate with VDDQ = 1.5 V while VDD = 1.8 V?
Yes. The datasheet explicitly states VDDQ supports 1.4 V to VDD, and the device is qualified for 1.5 V VDDQ with 1.8 V VDD. This allows interoperability with 1.5 V FPGA I/O banks while maintaining 1.8 V core logic stability, reducing I/O power and easing voltage rail design in mixed-supply systems.
What is the purpose of the CQ and CQ echo clocks, and how are they used in system design?
CQ and CQ are free-running, K-synchronized output clocks that mirror the phase and duty cycle of K and K. They are used by the receiving controller (e.g., FPGA) to sample Q[35:0] data with minimal skew - eliminating the need for complex delay-chain calibration. In practice, CQ clocks the even-numbered data words and CQ clocks the odd-numbered words within each two-word burst.
CY7C25442KV18-300BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25442KV18-300BZI FAQ
1.How can I place an order for CY7C25442KV18-300BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25442KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25442KV18-300BZI reliable?
The price and inventory of CY7C25442KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25442KV18-300BZI is usually 5 days.
3.What payment methods are accepted for CY7C25442KV18-300BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25442KV18-300BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C25442KV18-300BZI?
CY7C25442KV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25442KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25442KV18-300BZI?
For technical support, including CY7C25442KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25442KV18-300BZI requirements.
6.How does Aetrix verify that CY7C25442KV18-300BZI is sourced from the original manufacturer or authorized distributors?
All CY7C25442KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25442KV18-300BZI meets industry standards.
7.What is the process for return or replacement of CY7C25442KV18-300BZI?
All CY7C25442KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25442KV18-300BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25442KV18-300BZI part is unused and in its original packaging.
Return procedure for CY7C25442KV18-300BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C25442KV18-300BZI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

