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Cypress Semiconductor Corp CY7C25442KV18-300BZI

Part No.:
CY7C25442KV18-300BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25442KV18-300BZI.pdf
Description:
QDR SRAM, 2MX36, 0.45NS PBGA165
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,582

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Product details

Overview

CY7C25442KV18-300BZI from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 333 MHz operation, 2.0-cycle read latency, on-die termination (ODT), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers 666 MT/s DDR data transfer on both ports and supports 1.8 V core / 1.4–1.8 V I/O supply for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C25442KV18-300BZI datasheet, CY7C25442KV18-300BZI pinout, CY7C25442KV18-300BZI application, or CY7C25442KV18-300BZI equivalent, key selection criteria include dual-port concurrency, ODT configuration via ODT/ZQ pins, DOFF-controlled latency mode (1-cycle vs. 2-cycle), and HSTL-compatible 36-bit × 2-word burst interface timing.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Each port uses rising-edge-triggered K/K clocks and echo clocks (CQ/CQ) for precise DDR capture, with all inputs and outputs registered to K or K edges.

It features a PLL for accurate data placement, JTAG 1149.1 test access, and programmable ODT ranges (175–350 Ω low range; 175–250 Ω high range) selected by the ODT pin at power-up. The DOFF pin configures read latency: HIGH enables QDR II+ 2.0-cycle mode; LOW reverts to QDR I 1-cycle mode.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 333 MHz - enables 666 MT/s DDR throughput per port
Read Latency Configurable: 2.0 cycles (DOFF = HIGH) or 1.0 cycle (DOFF = LOW)
Supply Voltages VDD = 1.8 V ± 0.1 V; VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system interfacing
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 666 MT/s
On-Die Termination Supported on D[35:0], BWS[3:0], K/K - eliminates external resistors for DQ/BWS/clock lines
Package 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-pin-count memory

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit DDR input sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit DDR output edge-aligned with CQ/CQ; tristated when RPS is deasserted
RPS / WPS Read/Write Port Select Active-LOW control signals latched on K rising edge; enable independent port activation
A[19:0] Multiplexed address input 20-bit bus latched alternately on K (read) and K (write) rising edges for depth expansion
K / K Dual input clocks Rising-edge-triggered clocks for all synchronous operations; K used for read, K for write
CQ / CQ Echo clocks Free-running, K-synchronized outputs that simplify high-speed data capture timing
QVLD Valid data indicator Output pulse aligned with CQ/CQ edges indicating Q[35:0] data validity during read bursts
ODT On-die termination select Configures ODT resistance range at power-up; floating defaults to high-range (RQ/1.66)
ZQ ODT calibration reference Connects to precision external resistor (175–350 Ω) for impedance matching calibration
DOFF Latency mode control HIGH selects QDR II+ 2.0-cycle read latency; LOW selects QDR I 1.0-cycle mode

Key Features

Feature Design Value
Two-word burst architecture Reduces effective address bus frequency by 2× while maintaining full bandwidth - critical for FPGA-to-SRAM interconnects
Separate read/write data paths Eliminates bidirectional bus turnaround delays and contention, enabling true concurrent read/write transactions
Programmable ODT with ZQ calibration Removes need for 72 discrete termination resistors, saving PCB area and improving signal integrity at 666 MT/s
Configurable read latency (1.0 or 2.0 cycles) Allows system-level trade-off between timing margin and pipeline efficiency without hardware change
JTAG 1149.1 boundary scan Enables in-system testability and debug of high-speed memory interfaces without additional test fixtures

Applications

High-Speed Network Buffering Packet Processing Engine Cache

Use Scenario: Line-rate buffering in 10G/25G Ethernet switch ASICs where packet ingress/egress must be decoupled.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking first-level packet buffer with independent read/write arbitration.

Use Value: 666 MT/s DDR throughput per port sustains 48 Gbps aggregate bandwidth; ODT eliminates stub reflections on dense routing layers.

Use Scenario: Temporary storage for header parsing and forwarding decision metadata in multi-core network processors.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by multiple processing pipelines.

Use Value: 2.0-cycle latency mode provides deterministic timing for pipeline scheduling; DOFF pin allows runtime latency adjustment.

FPGA-Based Protocol Acceleration Telecom Baseband Processing

Use Scenario: Real-time protocol translation (e.g., TCP offload) using FPGA logic with tight timing closure requirements.

IC Role / Device Role / Timing Role: Synchronous burst memory interfaced directly to FPGA I/O banks with HSTL compatibility.

Use Value: Echo clocks (CQ/CQ) align with FPGA IDELAY/ODELAY primitives to achieve sub-100 ps setup/hold margins.

Use Scenario: Channel estimation and equalization coefficient storage in LTE/5G baseband units requiring deterministic access.

IC Role / Device Role / Timing Role: Burst-accessed coefficient RAM synchronized to symbol clock domain via K/K clocks.

Use Value: Full data coherency ensures most recent coefficients are always available; 1.8 V core reduces dynamic power in dense RF modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-333BIN Same 72-Mbit ×36 density, 333 MHz, but lacks ODT and echo clocks; uses SSTL-18 I/O Requires external termination and tighter board layout control; no CQ/CQ simplification for FPGA capture Prefer when cost sensitivity outweighs signal integrity complexity and ODT is not required
MT47H64M16HR-37E:H DDR2 SDRAM (1 Gbit), higher density but asynchronous command interface and refresh overhead Not suitable for deterministic low-latency burst access; introduces refresh-induced latency jitter Choose only if sustained sequential bandwidth > capacity efficiency is primary requirement

Compared with AS7C362000B-333BIN and MT47H64M16HR-37E:H, CY7C25442KV18-300BZI uniquely combines deterministic 2-cycle latency, integrated ODT, and echo-clock–assisted timing closure - making it optimal for FPGA-ASIC co-designs demanding zero-bus-turnaround concurrency and sub-nanosecond timing margin.

Availability

CY7C25442KV18-300BZI is available at Aetrix Electronics and suitable for high-speed network buffering, packet processing engine cache, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C25442KV18-300BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR® II+ SRAM portfolio, including legacy Cypress designs like the CY7C25442KV18 series.

This device belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking, telecom, and FPGA-accelerated computing.

FAQ

What is the function of the DOFF pin on CY7C25442KV18-300BZI?

The DOFF (Disable Off) pin configures the device's read latency mode. When asserted HIGH, it enables QDR II+ operation with 2.0-cycle read latency. When pulled LOW or tied to VSS, it reverts to QDR I mode with 1.0-cycle latency. This pin is sampled at power-up and remains latched until reset, allowing system-level latency tuning without firmware changes.

How does on-die termination (ODT) work on this SRAM, and what external components are needed?

ODT is enabled via the ODT pin and calibrated using an external precision resistor (175–350 Ω) connected to the ZQ pin. It applies matched termination to D[35:0], BWS[3:0], and K/K inputs, eliminating the need for 44 discrete 50 Ω resistors. No pull-ups/downs or series resistors are required on those lines - only the ZQ resistor and proper VDDQ decoupling.

Can CY7C25442KV18-300BZI operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The datasheet explicitly states VDDQ supports 1.4 V to VDD, and the device is qualified for 1.5 V VDDQ with 1.8 V VDD. This allows interoperability with 1.5 V FPGA I/O banks while maintaining 1.8 V core logic stability, reducing I/O power and easing voltage rail design in mixed-supply systems.

What is the purpose of the CQ and CQ echo clocks, and how are they used in system design?

CQ and CQ are free-running, K-synchronized output clocks that mirror the phase and duty cycle of K and K. They are used by the receiving controller (e.g., FPGA) to sample Q[35:0] data with minimal skew - eliminating the need for complex delay-chain calibration. In practice, CQ clocks the even-numbered data words and CQ clocks the odd-numbered words within each two-word burst.

CY7C25442KV18-300BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25442KV18-300BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C25442KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25442KV18-300BZI reliable?

The price and inventory of CY7C25442KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25442KV18-300BZI is usually 5 days.

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CY7C25442KV18-300BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25442KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25442KV18-300BZI?

For technical support, including CY7C25442KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25442KV18-300BZI requirements.

6.How does Aetrix verify that CY7C25442KV18-300BZI is sourced from the original manufacturer or authorized distributors?

All CY7C25442KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25442KV18-300BZI meets industry standards.

7.What is the process for return or replacement of CY7C25442KV18-300BZI?

All CY7C25442KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25442KV18-300BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25442KV18-300BZI part is unused and in its original packaging.

Return procedure for CY7C25442KV18-300BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C25442KV18-300BZI Tags

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