Cypress Semiconductor Corp CY7C2544KV18-300BZI

Overview

CY7C2544KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 333 MHz clock support, 2.0-cycle read latency, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards and switch fabric interfaces.

For engineers reviewing the CY7C2544KV18 datasheet, CY7C2544KV18 pinout, CY7C2544KV18 application, or CY7C2544KV18 equivalent, key selection criteria include DDR read/write throughput at 666 MT/s, HSTL I/O compatibility with 1.4–1.8 V VDDQ, FBGA-165 package thermal and routing constraints, and DOFF-controlled PLL mode switching between QDR II+ (333 MHz) and QDR I (167 MHz) operation.

Technical Context

This device implements a synchronous pipelined QDR®II+ architecture with physically separate read and write ports, eliminating bus turnaround delays. It uses dual input clocks (K and K) sampled only on rising edges, with echo clocks (CQ/CQ) aligned to output timing for precise DDR data capture.

The internal 2-word burst transfers 72 bits per access (36-bit width × 2 words), latching addresses on alternating K/K edges. The PLL enables accurate data placement at 333 MHz; when disabled via DOFF, it reverts to QDR I timing with 1-cycle latency and reduced max frequency (167 MHz).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102436B, CY7C2544KV18 delivers 3.3× higher bandwidth (666 vs. 200 MT/s), eliminates 24 external terminators via ODT, and enables deterministic 2-cycle latency critical for packet-switching fabric timing closure.

Availability

CY7C2544KV18 is available at Aetrix Electronics and suitable for network switch fabric buffering, high-speed test equipment memory, telecom baseband processing, and PCIe-based accelerator caching requiring stable component supply and long-term industrial availability.

Supply support for CY7C2544KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C2544KV18 belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic, low-latency, concurrent read/write memory access in packet-forwarding and signal-processing systems operating above 300 MHz.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted LOW, forcing the device into QDR I mode with 1-cycle read latency and a maximum clock frequency of 167 MHz. In this mode, timing parameters shift significantly: tAC (address-to-data) reduces from 1.8 ns (QDR II+) to 2.5 ns (QDR I), and all setup/hold windows widen to accommodate slower edge rates. Pulling DOFF HIGH restores full QDR II+ operation at 333 MHz.

How does On-Die Termination (ODT) reduce system design complexity?

ODT integrates termination resistors for D[35:0], BWS[3:0], and K/K inputs directly onto the die, eliminating the need for 24 discrete 50 Ω surface-mount resistors. This reduces PCB area by ~120 mm², removes 24 solder joints subject to impedance mismatch, and simplifies routing by allowing longer stub-free traces. ODT range is selected via the ODT pin and calibrated against the ZQ resistor value.

Can CY7C2544KV18 be used in systems with mixed 1.5 V and 1.8 V I/O voltage domains?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, making it compatible with both 1.5 V and 1.8 V HSTL I/O standards. When VDDQ = 1.5 V, output swing and drive strength scale accordingly, maintaining signal integrity across JEDEC HSTL Class I specifications. Core VDD remains fixed at 1.8 V ± 0.1 V regardless of VDDQ setting.

What is the role of CQ and CQ echo clocks in system timing closure?

CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They serve as source-synchronous strobes for capturing Q[35:0] read data, eliminating skew between clock and data paths. Because CQ/CQ track K/K propagation delay through the device, they allow receivers to latch data with relaxed setup/hold margins - essential for reliable operation at 333 MHz with >100 ps jitter tolerance.