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Cypress Semiconductor Corp CY7C25632KV18-450BZC

Part No.:
CY7C25632KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25632KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:953

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Product details

Overview

CY7C25632KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 450 MHz maximum clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[17:0], BWS[1:0], and K/K inputs. It features separate read/write ports, DDR interfaces on both ports (1100 MHz effective data rate), and HSTL I/O with VDDQ = 1.4–1.8 V for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C25632KV18 datasheet, CY7C25632KV18 pinout, CY7C25632KV18 application, or CY7C25632KV18 equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, DOFF-configurable latency mode, and 165-ball FBGA package compatibility with high-speed PCB routing constraints.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Address latching occurs on alternate rising edges of K and K clocks, enabling concurrent access without bus turnaround.

It integrates a PLL for precise data placement, supports programmable ODT via ZQ resistor calibration, and uses edge-aligned QVLD to indicate valid output data synchronized to CQ/CQ - critical for reliable capture in 550 MHz clock domain systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (4M × 18)
Max Clock Frequency450 MHz - sets maximum system bandwidth at 1.8 GB/s (1100 MT/s × 18-bit)
Read Latency2.5 cycles - enables deterministic timing for burst-4 reads when DOFF = HIGH
I/O VoltageVDDQ = 1.4–1.8 V - supports dual-supply interoperability with 1.5 V and 1.8 V logic families
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement
TerminationOn-die termination (ODT) for D[17:0], BWS[1:0], K/K - eliminates external resistors and reduces signal integrity complexity
Interface StandardHSTL Class I inputs / variable-drive HSTL outputs - ensures clean signal integrity at 1100 MT/s

Pinout & Package

Available in 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and bottom-side thermal pad.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data input18-bit parallel data sampled on rising edges of K/K; supports byte-write via BWS0/BWS1
Q[17:0]Synchronous read data output18-bit parallel data driven on rising edges of K/K; tri-stated when RPS deasserted
RPS, WPSPort select controlsActive-low signals enabling independent read/write port activation; sampled on K rising edge
BWS[1:0]Byte write selectTwo active-low signals controlling 9-bit byte groups (BWS0: D[8:0], BWS1: D[17:9])
K, KDifferential clock inputsRising edges latch all synchronous inputs; K drives read path, K drives write path
CQ, CQEcho clock outputsFree-running, phase-aligned copies of K/K used for source-synchronous data capture
QVLDValid data indicatorAsserted coincident with first valid Q[17:0] word in burst; edge-aligned to CQ/CQ
DOFFLatency mode controlHIGH selects 2.5-cycle latency; LOW reverts to 1-cycle QDR I mode
ODTODT range selectHIGH selects high-impedance ODT range (~105 Ω); LOW selects low range (~52 Ω)
ZQImpedance calibration referenceConnected to external resistor (175–350 Ω) to set output driver impedance to 0.2×RQ

Key Features

FeatureDesign Value
Four-word burst architectureReduces address bus toggling by 75% versus single-word access - lowers EMI and simplifies controller design
Separate read/write data pathsEnables true concurrent read/write operations without bus contention or turnaround delay
Programmable 2.5-cycle latencyOptimizes timing margin in high-frequency systems while maintaining deterministic burst alignment
Integrated PLL and echo clocksEliminates need for external clock forwarding ICs; enables robust source-synchronous capture at 550 MHz
Configurable ODT with ZQ calibrationRemoves 36 external termination resistors (D[17:0], BWS[1:0], K/K), saving >12 mm² board area

Applications

High-Speed Network Switch BufferTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a non-blocking buffer between ingress parser and egress scheduler, using concurrent RPS/WPS to sustain full line-rate throughput.

Use Value: 2.5-cycle latency + four-word burst delivers 1.8 GB/s sustained bandwidth with zero bus turnaround overhead - matching SerDes PHY timing constraints.

Use Scenario: Serving as frame buffer in CPRI/OBSAI-based wireless baseband units requiring deterministic read-after-write coherency.

IC Role / Device Role / Timing Role: Synchronous pipeline memory holding IQ samples during FFT/IFFT processing; QVLD synchronizes FPGA capture logic to CQ edge.

Use Value: Full data coherency and edge-aligned QVLD ensure sample integrity across multi-stage DSP pipelines without added handshake logic.

PCIe Gen3 Endpoint CacheTest Equipment Pattern Memory

Use Scenario: Acting as descriptor cache and scatter-gather table buffer in PCIe Gen3 endpoint controllers interfacing with FPGA-based DMA engines.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory mapped into host address space via BAR; DOFF pin dynamically switches latency mode during link training phases.

Use Value: 450 MHz operation meets PCIe Gen3 timing closure requirements; ODT eliminates stub reflections on dense 8-layer backplane traces.

Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) for high-speed digital IC validation at 1.1 Gbps.

IC Role / Device Role / Timing Role: Burst-mode pattern generator memory synchronized to ATE timing controller via K/K and CQ/CQ; ZQ-calibrated outputs match 50 Ω probe impedance.

Use Value: HSTL I/O with programmable drive strength ensures <10 ps jitter on 1.1 Gbps pattern edges - critical for parametric yield analysis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-Mbit (2M × 18), 500 MHz max, no ODT, requires external terminationLacks on-die termination and echo clocks - increases layout complexity and signal integrity risk above 400 MHzPrefer when cost sensitivity outweighs board area and timing margin requirements
ISSI IS61WV102418BLL-15BLI18-Mbit (512K × 36), 15 ns async access, no DDR, no burst, no ODTAsynchronous interface limits bandwidth to ~133 MB/s - unsuitable for QDR II+ throughput targetsOnly viable for legacy designs where QDR architecture is not required

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C25632KV18 uniquely delivers 72-Mbit density with integrated ODT, echo clocks, and 2.5-cycle latency - reducing BOM count by 36 resistors and enabling clean 450 MHz timing closure without external clock forwarding.

Availability

CY7C25632KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, PCIe Gen3 endpoint caches, and ATE pattern memory requiring stable component supply and long-lifecycle support.

Supply support for CY7C25632KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write throughput and sub-nanosecond timing predictability are mandatory.

FAQ

What is the function of the DOFF pin on CY7C25632KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled at power-up and remains static during operation - it is not a dynamic mode-switching control.

How does the ZQ pin calibrate output impedance?

ZQ connects to an external precision resistor (175–350 Ω) tied to ground. The internal circuitry measures this resistance and sets output driver impedance to exactly 0.2×RQ for Q[17:0], CQ, and CQ pins. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and may cause undefined behavior.

Can CY7C25632KV18 operate with only one clock input?

No. The device requires both K and K differential clock inputs. K controls read-port timing (address latching, Q[17:0] output), while K controls write-port timing (D[17:0] sampling, BWS[1:0] capture). Using only one clock violates timing specifications and prevents simultaneous read/write operation - the core architectural advantage of QDR II+.

What happens to Q[17:0] when RPS is deasserted?

When RPS is deasserted (HIGH), the read port is deselected and Q[17:0] drivers enter high-impedance (tri-state) mode on the next rising edge of the K clock. Pending read bursts complete before tri-state activation, ensuring no partial-word corruption. This behavior is synchronous and fully compliant with JTAG boundary-scan visibility requirements.

CY7C25632KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25632KV18-450BZC FAQ

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The price and inventory of CY7C25632KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25632KV18-450BZC is usually 5 days.

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All CY7C25632KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25632KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C25632KV18-450BZC?

All CY7C25632KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25632KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25632KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C25632KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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