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Cypress Semiconductor Corp CY7C25632KV18-500BZC

Part No.:
CY7C25632KV18-500BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25632KV18-500BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:919

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Product details

Overview

CY7C25632KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[17:0], BWS[1:0], and K/K inputs. It features separate read/write ports, DDR interfaces on both ports (1100 MHz data rate), and operates at 1.8 V core / 1.4–1.8 V I/O for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C25632KV18 datasheet, CY7C25632KV18 pinout, CY7C25632KV18 application, or CY7C25632KV18 equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) timing support, QVLD data validity signaling, HSTL I/O compatibility, and FBGA-165 package integration in high-speed packet buffering systems.

Technical Context

The CY7C25632KV18 implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling full concurrency without bus turnaround.

It uses a PLL for precise data placement and supports two latency modes: 2.5-cycle read latency when DOFF = HIGH, and 1-cycle latency when DOFF = LOW. Echo clocks CQ and CQ are free-running and edge-aligned to K/K, simplifying high-speed data capture in SerDes-adjacent memory subsystems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR data transfer on both ports
Read Latency 2.5 cycles (DOFF = HIGH) - balances bandwidth and timing margin in burst-oriented systems
Core Supply 1.8 V ± 0.1 V - defines low-power, high-speed SRAM operation domain
I/O Supply Range 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V HSTL interfaces
On-Die Termination Configurable ODT on D[17:0], BWS[1:0], K/K - eliminates external 50 Ω resistors, reducing PCB area and signal integrity risk
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, thermally demanding memory modules

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; supports byte-write via BWS0/BWS1
Q[17:0] Synchronous read data output 18-bit parallel data driven on rising edges of K/K; tri-stated when RPS deasserted
RPS Read port select (active LOW) Enables read burst of four 18-bit words; sampled on rising edge of K
WPS Write port select (active LOW) Initiates write burst; sampled on rising edge of K; ignores D[17:0] when deasserted
BWS0, BWS1 Byte write select (active LOW) BWS0 controls D[8:0]; BWS1 controls D[17:9]; enables partial-word writes without read-modify-write
K, K Differential clock inputs Rising edges latch all synchronous inputs; K drives read outputs, K drives write inputs
CQ, CQ Echo clock outputs Free-running, edge-aligned copies of K/K - used for source-synchronous data capture in FPGA/ASIC receivers
QVLD Data validity indicator Asserted coincident with valid Q[17:0] - eliminates need for fixed delay-based data sampling windows
ODT On-die termination control Selects ODT resistance range (RQ/3.33 or RQ/1.66) based on ZQ resistor value; default HIGH
ZQ Impedance calibration reference Connects to external resistor to ground; sets output driver impedance to 0.2 × RQ for CQ/CQ/Q[17:0]

Key Features

Feature Design Value
Four-word burst architecture Reduces effective address bus toggling by 4× versus single-word access - lowers routing congestion and EMI in switch fabric designs
Separate read/write data paths Eliminates bidirectional bus turnaround delays - enables true concurrent read/write at full bandwidth without arbitration overhead
Programmable 2.5-cycle or 1-cycle read latency DOFF pin selects mode: 2.5-cycle for maximum throughput in streaming buffers; 1-cycle for low-latency control-plane lookups
HSTL Class I inputs / variable-drive HSTL outputs Ensures signal integrity at 550 MHz with controlled slew and termination - compatible with Xilinx Virtex-7 and Intel Stratix V memory interfaces
JTAG 1149.1 test access port Enables boundary scan testing and in-system programming of memory configuration registers - critical for production test coverage

Applications

High-Speed Network Packet Buffering Telecom Line Card Data Buffers

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switches before classification and forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffering between MAC and traffic manager ASICs, synchronized to 550 MHz system clock with echo-clock–based data capture.

Use Value: Concurrent read/write at 1100 MT/s sustains line-rate packet processing without backpressure; ODT reduces stub reflections on dense 18-bit data buses.

Use Scenario: Holding time-sensitive voice-over-IP (VoIP) payload fragments across TDM-to-packet gateways in carrier-grade DSLAMs.

IC Role / Device Role / Timing Role: Low-latency memory for jitter-buffer management, using 1-cycle read mode (DOFF = LOW) to minimize end-to-end delay in real-time audio path.

Use Value: QVLD signal enables deterministic data sampling in FPGA logic; HSTL I/O ensures clean 1.5 V signaling over 80 mm FR4 traces.

Multi-Core Processor Cache Coherence Directory Test Equipment Pattern Memory

Use Scenario: Maintaining shared snoop filter state across eight CPU cores in high-performance computing SoCs.

IC Role / Device Role / Timing Role: Coherent directory memory accessed simultaneously by multiple cache controllers; RPS/WPS enable independent port arbitration.

Use Value: Full data coherency guarantees most-current directory entries; depth expansion via port selects supports scalable multi-chip directory arrays.

Use Scenario: Storing high-speed digital stimulus and expected response vectors in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: High-reliability pattern memory interfaced to ATE pattern generator ICs, leveraging CQ/CQ for sub-100 ps setup/hold margin.

Use Value: 165-ball FBGA allows tight layout with matched-length K/K and CQ/CQ nets; neutron soft error immunity meets industrial ATE reliability requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PF 36-Mbit (2M × 18), 1000 MHz DDR interface, no ODT, 1.5 V core, 165-ball FBGA Lacks ODT and echo clocks; requires external termination; lower density limits buffer depth in 40G+ systems Prefer when legacy 1.5 V-only systems require drop-in replacement without redesigning termination network
ISSI IS61WV102418BLL-10BLI 18-Mbit (512K × 36), 10 ns async access, no DDR, no ODT, 100-pin TQFP Asynchronous, non-burst, no concurrency - unsuitable for line-rate packet buffering Only viable for cost-sensitive, low-bandwidth control-plane storage where latency >10 ns is acceptable

Compared with IDT72T3615L10PF and IS61WV102418BLL-10BLI, the CY7C25632KV18 uniquely delivers 72-Mbit density with integrated ODT, echo clocks, and programmable latency-enabling higher throughput and simpler PCB layout in next-generation networking hardware.

Availability

CY7C25632KV18 is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card data buffers, and multi-core processor cache coherence directory applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C25632KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ SRAM product line was designed specifically for ultra-low-latency, high-throughput memory subsystems in networking ASICs, FPGA-based accelerators, and test equipment-emphasizing concurrent access, signal integrity, and system-level timing simplicity.

FAQ

What is the function of the DOFF pin on CY7C25632KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for maximum bandwidth in streaming applications; when LOW, it reverts to 1-cycle latency for minimal access delay in control-path lookups. This pin is sampled at power-up and remains static during operation unless reset.

How does On-Die Termination (ODT) work on this SRAM?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an internal resistor network calibrated against the ZQ pin's external reference resistor. ODT range (low/high) is selected by the ODT pin voltage, eliminating need for 50 Ω external resistors and improving signal integrity on high-speed buses.

Can CY7C25632KV18 be used with a 1.5 V I/O supply?

Yes - the device supports I/O VDDQ from 1.4 V to 1.8 V, including 1.5 V. Its HSTL Class I inputs and variable-drive outputs are fully compliant at 1.5 V, enabling interoperability with legacy 1.5 V FPGAs and ASICs without level-shifting circuitry.

What is the role of CQ and CQ echo clocks?

CQ and CQ are free-running, edge-aligned copies of the K and K input clocks, respectively. They provide source-synchronous timing references for capturing Q[17:0] output data in receiving logic (e.g., FPGA IDELAY/ISERDES), relaxing PCB trace length matching requirements and enabling reliable 550 MHz DDR operation.

CY7C25632KV18-500BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25632KV18-500BZC FAQ

1.How can I place an order for CY7C25632KV18-500BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C25632KV18-500BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25632KV18-500BZC reliable?

The price and inventory of CY7C25632KV18-500BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25632KV18-500BZC is usually 5 days.

3.What payment methods are accepted for CY7C25632KV18-500BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25632KV18-500BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C25632KV18-500BZC?

CY7C25632KV18-500BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25632KV18-500BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25632KV18-500BZC?

For technical support, including CY7C25632KV18-500BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25632KV18-500BZC requirements.

6.How does Aetrix verify that CY7C25632KV18-500BZC is sourced from the original manufacturer or authorized distributors?

All CY7C25632KV18-500BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25632KV18-500BZC meets industry standards.

7.What is the process for return or replacement of CY7C25632KV18-500BZC?

All CY7C25632KV18-500BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25632KV18-500BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25632KV18-500BZC part is unused and in its original packaging.

Return procedure for CY7C25632KV18-500BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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