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Cypress Semiconductor Corp CY7C25632KV18-550BZC

Part No.:
CY7C25632KV18-550BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25632KV18-550BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:137

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Product details

Overview

CY7C25632KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 4M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs. It features separate read/write ports, DDR interfaces on both ports (1100 MT/s effective data rate), and HSTL I/O with VDDQ = 1.4–1.8 V. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C25632KV18 datasheet, CY7C25632KV18 pinout, CY7C25632KV18 application, or CY7C25632KV18 equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) timing support, QVLD data validity signaling, and FBGA-165 package compatibility with high-speed PCB routing constraints.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling full concurrency without bus turnaround. Internal self-timed writes ensure deterministic write completion independent of system timing margins.

It integrates a PLL for precise data placement and uses echo clocks (CQ/CQ) aligned to K/K to simplify high-speed data capture. The DOFF pin selects between 2.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, allowing runtime adaptation to system timing budgets while maintaining full data coherency.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 organization)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR data transfer on both ports
Read Latency 2.5 cycles (DOFF = HIGH) - reduces pipeline stalls in burst-intensive traffic
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.8 V - supports dual-voltage system integration
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >500 MHz
On-Die Termination Configurable ODT for D[17:0], BWS[1:0], K/K - eliminates 12 external 50 Ω resistors
Package 165-ball FBGA (13 × 15 × 1.4 mm) - 0.8 mm ball pitch, JEDEC MO-270AB compliant

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Sampled on rising edges of K/K; 18-bit parallel input path for burst writes
Q[17:0] Synchronous read data output DDR-aligned output driven on K/K rising edges; tri-stated when RPS deasserted
RPS / WPS Read/Write port select Active-low asynchronous enable; controls port arbitration and output driver state
BWS[1:0] Byte write select Independent control of D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes
K / K Differential clock inputs Rising-edge-triggered; K clocks read operations, K clocks write operations
CQ / CQ Echo clock outputs Free-running, edge-aligned copies of K/K; used for source-synchronous data capture
QVLD Data validity indicator Asserted coincident with valid Q[17:0] - eliminates need for fixed delay calibration
ODT On-die termination control Selects ODT range (RQ/3.33 or RQ/1.66) during power-up; floating = high-range default

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling by 75% vs. single-word access - lowers EMI and routing congestion
Separate read/write data paths Enables true concurrent read+write in same cycle - eliminates bus turnaround overhead in switch fabric buffers
Programmable read latency (1 or 2.5 cycles) DOFF pin allows dynamic latency selection - supports both low-latency control plane and high-throughput data plane use
Integrated PLL and echo clocks Eliminates need for external clock forwarding ICs - simplifies timing closure in 550 MHz systems
JTAG 1149.1 boundary scan Enables production test and debug of high-density FBGA interconnects without physical probe access

Applications

Network Switch Buffering Router Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches.

IC Role / Device Role / Timing Role: High-speed shared memory buffer with concurrent read/write access for header processing pipelines.

Use Value: 1100 MT/s bandwidth and 2.5-cycle latency enable line-rate 100Gbps packet classification without stall penalties.

Use Scenario: Buffering fragmented IP packets across distributed forwarding engines in carrier-grade routers.

IC Role / Device Role / Timing Role: Synchronous burst SRAM acting as packet reassembly scratchpad with deterministic latency.

Use Value: Four-word burst mode reduces address bus activity by 4×, lowering PCB layer count and signal integrity risk.

Telecom Baseband Processing High-Frequency Trading Systems

Use Scenario: Real-time channel estimation and precoding coefficient storage in 5G massive MIMO base stations.

IC Role / Device Role / Timing Role: Low-latency memory for time-critical DSP kernels requiring simultaneous coefficient fetch and update.

Use Value: Separate RPS/WPS pins allow lock-step read-modify-write sequences without arbitration delay.

Use Scenario: Order book snapshot caching and market data feed buffering in sub-microsecond trading platforms.

IC Role / Device Role / Timing Role: Deterministic-access memory for ultra-low-latency financial data pipelines.

Use Value: QVLD pin provides cycle-accurate data readiness - removes need for fixed setup/hold margin allocation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 1 GHz DDR interface, no ODT, 135-ball FBGA Lacks on-die termination and echo clocks - requires external termination and clock forwarding circuitry Preferred where board space permits discrete termination and system clock tree already exists
ISSI IS61WV102418BLL-10BLI 18-Mbit (512K × 36), 10 ns async access, no DDR, SOJ-54 package Asynchronous interface, no burst mode or concurrent ports - 80% lower bandwidth than CY7C25632KV18 Suitable only for cost-sensitive, non-real-time control-plane memory where latency >10 ns is acceptable

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C25632KV18 delivers 4× higher density and integrated ODT/echo clocks - reducing BOM count by ≥12 components and enabling direct replacement in QDR-II+ socket designs without layout revision.

Availability

CY7C25632KV18 is available at Aetrix Electronics and suitable for network switch buffering, telecom baseband processing, high-frequency trading systems, and router line card memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C25632KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C25632KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking infrastructure equipment operating at OC-192/STM-64 and beyond.

FAQ

What is the function of the DOFF pin on CY7C25632KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for maximum bandwidth; when LOW, it reverts to 1-cycle latency like legacy QDR-I devices. This pin is sampled at power-up and remains static during operation - it is not dynamically switchable mid-operation per the datasheet timing diagrams.

How does on-die termination (ODT) work on CY7C25632KV18?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor tied to ground. ODT pin state at power-up selects either RQ/3.33 (LOW) or RQ/1.66 (HIGH) termination value. Default high-state selection enables ~50 Ω termination when ZQ = 82.5 Ω, matching standard HSTL-1 transmission lines.

Can CY7C25632KV18 be used with a single-ended clock source?

No - the device requires differential K/K clock inputs. Driving K with a clock signal and tying K to a fixed voltage violates AC timing specifications and disables proper DDR operation. A dedicated differential clock generator or transformer is mandatory to meet tSKP (clock skew) and tCKH/tCKL (pulse width) requirements per Rev. *I datasheet Section "AC Electrical Characteristics".

What is the role of the QVLD signal in system timing design?

QVLD is a synchronous output that asserts coincident with valid Q[17:0] data on the rising edge of CQ/CQ. It replaces fixed-delay timing assumptions - designers use QVLD as a latch-enable signal for downstream registers, eliminating setup/hold margin allocation and enabling robust timing closure at 550 MHz without iterative PCB tuning.

CY7C25632KV18-550BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25632KV18-550BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C25632KV18-550BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C25632KV18-550BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25632KV18-550BZC is usually 5 days.

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For technical support, including CY7C25632KV18-550BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25632KV18-550BZC requirements.

6.How does Aetrix verify that CY7C25632KV18-550BZC is sourced from the original manufacturer or authorized distributors?

All CY7C25632KV18-550BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25632KV18-550BZC meets industry standards.

7.What is the process for return or replacement of CY7C25632KV18-550BZC?

All CY7C25632KV18-550BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25632KV18-550BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25632KV18-550BZC part is unused and in its original packaging.

Return procedure for CY7C25632KV18-550BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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