Cypress Semiconductor Corp CY7C2563KV18-400BZC

Overview

CY7C2563KV18-400BZC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR®II+ SRAM with separate read/write ports, 2.5-cycle read latency, on-die termination (ODT), and DDR interfaces operating at 400 MHz (800 MT/s data rate). It supports concurrent read/write transactions in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C2563KV18-400BZC datasheet, CY7C2563KV18-400BZC pinout, CY7C2563KV18-400BZC application, or CY7C2563KV18-400BZC equivalent, key selection criteria include burst depth (4-word), ODT support on D[17:0]/BWS[1:0]/K/K inputs, HSTL I/O compatibility, 165-ball FBGA (13 × 15 mm) package, and DOFF-pin configurable 1-cycle vs. 2.5-cycle latency mode.

Technical Context

This device implements a synchronous pipelined architecture with independent read and write address/data paths latched on alternate rising edges of the K clock. Its dual DDR interfaces deliver 800 MT/s effective bandwidth while eliminating bus turnaround delays.

The integrated PLL ensures precise data placement relative to echo clocks (CQ/CQ), and the QVLD signal provides cycle-accurate indication of valid output data. ODT is programmable per input group and operates without external resistors, reducing PCB routing complexity and signal integrity risk.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C2563KV18-400BZC uniquely delivers 72-Mbit density, 400 MHz DDR operation, and ODT in a compact FBGA - making it the sole fit for new 10G+ packet memory designs requiring deterministic 2.5-cycle latency and concurrent access.

Availability

CY7C2563KV18-400BZC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, telecom baseband processing, and defense radar signal buffering requiring stable component supply across extended production lifecycles.

Supply support for CY7C2563KV18-400BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2563KV18 belongs to Cypress's QDR®II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in networking infrastructure and real-time signal processing equipment.

FAQ

What is the function of the DOFF pin on CY7C2563KV18-400BZC?

The DOFF (Delay OFF) pin configures the device's read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for optimal QDR-II+ performance; when LOW, it reverts to 1-cycle latency compatible with QDR-I timing. This pin is sampled at power-up and must remain static during operation to avoid undefined behavior in the internal pipeline.

Does CY7C2563KV18-400BZC require external termination resistors?

No. The device integrates On-Die Termination (ODT) for D[17:0], BWS[1:0], and K/K inputs, supporting 50 Ω termination without external components. ODT is enabled by default at power-up and can be disabled via JTAG or left active to simplify PCB layout, reduce BOM count, and improve signal integrity at 400 MHz.

How does the 4-word burst architecture affect address bus utilization?

The 4-word burst reduces address bus transitions by 75% compared to single-word access: one address initiates four consecutive 18-bit words (72 bits total) transferred over four K-clock cycles. This lowers address bus frequency, EMI emissions, and routing complexity - especially beneficial in dense backplane or multi-chip module designs.

Can CY7C2563KV18-400BZC operate with VDDQ = 1.5V while VDD = 1.8V?

Yes. The device supports VDDQ from 1.4 V to 1.8 V independently of core VDD (1.8 V ± 0.1 V), enabling direct interfacing with 1.5 V HSTL systems. Electrical characteristics including setup/hold times and ODT impedance remain guaranteed across this range, as validated in the 001-15887 Rev. *K datasheet AC tables.