Cypress Semiconductor Corp CY7C2563KV18-450BZC

Overview

CY7C2563KV18-450BZC from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 1.8V QDR®II+ SRAM with 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 450 MHz with DDR interfaces on both read and write ports (900 Mbps effective data rate), supports concurrent read/write transactions via independent ports, and targets high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C2563KV18-450BZC datasheet, CY7C2563KV18-450BZC pinout, CY7C2563KV18-450BZC application, or CY7C2563KV18-450BZC equivalent, key selection criteria include its 450 MHz clock frequency, 1.8V core / 1.4–1.8V I/O supply range, 165-ball FBGA package, ODT support on D[17:0]/BWS[1:0]/K/K inputs, and DOFF-controlled latency mode switching between 1-cycle and 2.5-cycle read timing.

Technical Context

This device implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its dual DDR interfaces operate on rising edges of complementary K/K clocks, while echo clocks CQ/CQ align output data capture timing for reliable high-speed interfacing.

The internal PLL ensures precise data placement relative to clock edges, and the self-timed write circuitry guarantees deterministic write completion. Depth expansion is enabled via independent RPS/WPS controls, and full data coherency ensures reads return the most recently written data regardless of port contention.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, the CY7C2563KV18-450BZC uniquely delivers 16.2 GB/s bandwidth with built-in ODT and echo-clock timing - eliminating external components and simplifying high-speed layout while maintaining strict latency control.

Availability

CY7C2563KV18-450BZC is available at Aetrix Electronics and suitable for network infrastructure, telecom line cards, and high-speed test equipment requiring stable component supply, long-lifecycle support, and guaranteed Pb-free manufacturing compliance.

Supply support for CY7C2563KV18-450BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The QDR®II+ SRAM product line targets applications demanding deterministic latency, concurrent access, and high bandwidth - specifically engineered for packet processing, baseband acceleration, and high-speed instrumentation.

FAQ

What is the function of the DOFF pin on CY7C2563KV18-450BZC?

The DOFF (Delay OFF) pin configures the device's read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for improved timing margin; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly controls internal register staging and must be held stable during initialization and operation.

How does On-Die Termination (ODT) work on this SRAM?

ODT is enabled by driving the ODT pin HIGH, activating 50Ω termination resistors on D[17:0], BWS[1:0], and K/K inputs. This matches standard HSTL transmission lines, eliminating the need for external 50Ω resistors and reducing PCB layer count, BOM cost, and signal reflection at 450 MHz.

Can CY7C2563KV18-450BZC be used with a 1.5V VDDQ supply?

Yes - the device supports VDDQ from 1.4V to 1.8V, including 1.5V. At 1.5V, HSTL output drive strength is reduced but remains compliant with HSTL Class I specifications; timing parameters (e.g., tAC, tHZ) must be verified per the 1.5V column in the AC Electrical Characteristics table of the datasheet.

What is the purpose of the CQ and CQ echo clocks?

CQ and CQ are output-synchronized copies of the K and K input clocks, driven with zero skew relative to Q[17:0] data transitions. They allow receiving logic to sample output data using the same clock edge that launched it - removing setup/hold uncertainty and enabling reliable capture at 450 MHz without complex delay tuning.