Cypress Semiconductor Corp CY7C2563KV18-500BZXI

Overview

CY7C2563KV18-500BZXI from Cypress Semiconductor is a 4M × 18-bit (72-Mbit), 500 MHz QDR®II+ SRAM with separate read/write ports, 2.5-cycle read latency, on-die termination (ODT), and HSTL I/O. It operates at 1.8V core and 1.4–1.8V I/O supply, packaged in 165-ball FBGA (13 × 15 × 1.4 mm), and targets high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C2563KV18-500BZXI datasheet, CY7C2563KV18-500BZXI pinout, CY7C2563KV18-500BZXI application, or CY7C2563KV18-500BZXI equivalent, key selection criteria include burst depth (4-word), DDR timing alignment via echo clocks (CQ/CQ), QVLD data validity signaling, ODT support on D[17:0]/BWS[1:0]/K/K, and synchronous self-timed writes.

Technical Context

This device implements QDR II+ architecture with fully independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent read/write transactions without bus turnaround.

It integrates a PLL for precise data placement, supports DOFF-selectable latency modes (2.5-cycle when HIGH, 1-cycle when LOW), and uses HSTL Class I inputs with variable-drive outputs. ODT is configurable per D[17:0], BWS[1:0], and K/K pins to eliminate external termination resistors.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free finish (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with CY7C2563KV18-450BZXI, the -500BZXI delivers 11% higher bandwidth and tighter timing margins but increases power by ~9%; versus AS7C3256PFS-15BIN, it provides deterministic DDR throughput and integrated signal integrity features essential for 500 MHz operation.

Availability

CY7C2563KV18-500BZXI is available at Aetrix Electronics and suitable for Layer 3 routing buffers, high-speed packet classifiers, and switch fabric interface buffers requiring stable component supply across multi-year telecom and networking hardware lifecycles.

Supply support for CY7C2563KV18-500BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

This device belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write and signal integrity at >500 MHz are mandatory.

FAQ

What is the function of the DOFF pin on CY7C2563KV18-500BZXI?

The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, the device operates with 2.5-cycle read latency (QDR II+ mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This pin is sampled synchronously on the rising edge of the K clock and must be held stable during initialization and operation to avoid undefined latency behavior.

Does CY7C2563KV18-500BZXI support JTAG boundary scan?

Yes, it implements IEEE 1149.1 (JTAG) test access port with TDI, TDO, TCK, TMS, and TRST pins. The JTAG interface supports instruction register scan, data register scan, and IDCODE readout. JTAG can be disabled via fuse programming if not required in production, reducing pin count overhead and leakage current.

How does On-Die Termination (ODT) work on this SRAM?

ODT is enabled by driving the ODT pin HIGH, activating 50 Ω termination resistors on D[17:0], BWS[1:0], and K/K inputs. Termination strength is fixed and non-adjustable. ODT eliminates the need for external series or parallel resistors, reducing PCB layer count, improving signal rise/fall times, and lowering crosstalk in dense memory interfaces.

Can CY7C2563KV18-500BZXI operate with different VDDQ and VDD voltages?

Yes - VDD (core) is fixed at 1.8 V ± 0.1 V, while VDDQ (I/O) is independently configurable from 1.4 V to 1.8 V. This allows interfacing with 1.5 V or 1.8 V ASIC/FPGA I/O banks without level shifters. VDDQ must be stable before VDD during power-up, and both supplies require separate decoupling per datasheet layout guidelines.