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Cypress Semiconductor Corp CY7C2563XV18-600BZXC

Part No.:
CY7C2563XV18-600BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2563XV18-600BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:272

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Product details

Overview

CY7C2563XV18-600BZXC from Cypress Semiconductor is a 4M × 18, 72-Mbit QDR® II+ Xtreme SRAM with four-word burst architecture, 2.5-cycle read latency (DOFF = HIGH), 600 MHz clock operation, and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards and telecom switching fabric.

For engineers reviewing the CY7C2563XV18-600BZXC datasheet, CY7C2563XV18-600BZXC pinout, CY7C2563XV18-600BZXC application, or CY7C2563XV18-600BZXC equivalent, key selection criteria include DDR read/write ports, HSTL I/O compatibility, echo clock (CQ/CQ) timing support, and 165-ball FBGA package integration with depth expansion via RPS/WPS control.

Technical Context

This SRAM implements true dual-port synchronous pipelined architecture: independent read and write ports share one multiplexed address bus but use separate data paths (Q[17:0] outputs, D[17:0] inputs), eliminating bus turnaround overhead. Each port operates at DDR rates-data transferred on both rising edges of K and K clocks-enabling 1200 MT/s effective throughput at 600 MHz clock frequency.

The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) synchronized to K/K for simplified high-speed capture, and programmable ODT with two impedance ranges selected by the ODT pin and ZQ-referenced resistor. Read latency is configurable: 2.5 cycles (QDR II+ mode, DOFF = HIGH) or 1 cycle (QDR I mode, DOFF = LOW).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 organization)
Max Clock Frequency 600 MHz - determines maximum sustained bandwidth of 1200 MT/s per port
Read Latency 2.5 clock cycles (DOFF = HIGH) - enables QDR II+ timing compliance and deterministic burst alignment
I/O Voltage VDDQ = 1.4 V to 1.6 V - supports 1.5 V HSTL-compatible signaling with variable-drive output buffers
Core Supply VDD = 1.8 V ± 0.1 V - defines stable low-power operation for high-speed SRAM core logic
On-Die Termination Supported on D[17:0], BWS[1:0], K/K - eliminates external 50 Ω resistors, reducing PCB area and signal integrity risk
Burst Length Four 18-bit words per access - reduces address bus toggling frequency by 4× versus single-word addressing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; supports byte-write masking via BWS0/BWS1
Q[17:0] Synchronous read data output 18-bit parallel data driven on rising edges of K/K; tristated when RPS is deasserted
RPS Read port select (active LOW) Enables read burst; sampled on rising edge of K; controls Q[17:0] driver enable and QVLD assertion
WPS Write port select (active LOW) Initiates write burst; sampled on rising edge of K; gates D[17:0] and BWS[1:0] validity
BWS0, BWS1 Byte write select (active LOW) BWS0 masks D[8:0], BWS1 masks D[17:9]; enables partial-word writes without read-modify-write
K, K Differential clock inputs Rising edges latch all synchronous inputs (address, data, control); define DDR timing reference
CQ, CQ Echo clock outputs Free-running, K/K-synchronized clocks for source-synchronous data capture at receiver
QVLD Valid data indicator Asserted coincident with first valid Q[17:0] word in burst; edge-aligned to CQ/CQ for timing margin
ODT On-die termination select Selects ODT impedance range (LOW ≈ RQ/3.33, HIGH ≈ RQ/1.66); default HIGH if floating
ZQ Impedance calibration reference Connects to precision 240 Ω resistor to ground; calibrates internal ODT drivers during power-up

Key Features

Feature Design Value
Separate read/write ports Enables concurrent read and write operations without arbitration delay or bus contention
Four-word burst architecture Reduces required address transitions by 75%, lowering address bus routing complexity and skew sensitivity
HSTL-compatible I/O Supports 1.5 V signaling with programmable drive strength-ensures signal integrity up to 1200 MT/s
Configurable read latency DOFF pin selects between 2.5-cycle (QDR II+) and 1-cycle (QDR I) modes-enables legacy compatibility
JTAG 1149.1 test access port Enables boundary scan testing and in-system programming without dedicated debug hardware

Applications

Network Packet Buffering Telecom Switch Fabric

Use Scenario: Line-rate buffering of 10G/40G Ethernet frames in ingress/egress queues of carrier-grade routers.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM serving as shared buffer memory with simultaneous read (forwarding engine) and write (MAC interface) access.

Use Value: Four-word burst and DDR interfaces deliver 1200 MT/s per port, meeting strict 600 MHz system clock constraints while maintaining full coherency across concurrent transactions.

Use Scenario: Cell-based switching in ATM or MPLS core switches requiring deterministic 2.5-cycle read response for header lookup pipelines.

IC Role / Device Role / Timing Role: QDR II+ Xtreme SRAM acting as forwarding table cache with echo clocks (CQ/CQ) enabling reliable source-synchronous data capture at 1200 MT/s.

Use Value: Configurable DOFF pin allows migration from legacy QDR I designs (1-cycle latency) to optimized QDR II+ mode (2.5-cycle) without board redesign.

High-Speed Test Equipment Memory Defense Radar Signal Processing

Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) with multi-gigasample/sec sampling.

IC Role / Device Role / Timing Role: Dual-port SRAM used as circular buffer memory-write port captures ADC samples, read port feeds DAC output pipeline.

Use Value: On-die termination on D[17:0] and K/K eliminates 36 external 50 Ω resistors, reducing PCB layer count and improving high-frequency signal fidelity.

Use Scenario: Pulse-Doppler radar front-end processing where deterministic latency and radiation-tolerant operation are critical.

IC Role / Device Role / Timing Role: Synchronous burst SRAM storing intermediate FFT results with QVLD-stamped output validation for timing-critical interrupt-driven DMA transfers.

Use Value: Neutron soft error immunity (documented in datasheet) combined with 1.8 V core supply ensures operational reliability in avionics environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PF 36-Mbit (2M × 18), 1000 MHz max clock, no ODT, LVDS I/O, 2.5 V supply Higher speed but incompatible voltage and signaling; requires level-shifting and external termination Choose only if system already uses 2.5 V LVDS infrastructure and demands >600 MHz operation
ISSI IS61WV102418B 18-Mbit (512K × 36), async SRAM, 166 MHz max, CMOS I/O, 3.3 V supply Asynchronous interface, no DDR, no echo clocks, no burst-lower bandwidth, higher latency Acceptable only for cost-sensitive, non-real-time buffering where 1200 MT/s throughput is not required

Compared with IDT72T3615L10PF and IS61WV102418B, CY7C2563XV18-600BZXC uniquely delivers 72-Mbit density with DDR QDR II+ timing, integrated ODT, and 1.5 V HSTL I/O-making it the sole fit for 600 MHz–1200 MT/s synchronous packet buffering with minimal board-level components.

Availability

CY7C2563XV18-600BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, high-speed test equipment memory, and defense radar signal processing requiring stable component supply across extended production lifecycles.

Supply support for CY7C2563XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2563XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in networking and telecom infrastructure where concurrent read/write bandwidth and signal integrity are mission-critical.

FAQ

What is the function of the DOFF pin on CY7C2563XV18-600BZXC?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables QDR II+ operation with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains latched during operation-no runtime reconfiguration is supported.

Does CY7C2563XV18-600BZXC require external termination resistors?

No. The device integrates on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs, selectable via the ODT pin and calibrated against the ZQ pin's external 240 Ω resistor. This eliminates the need for 20+ discrete 50 Ω resistors, reducing PCB area and improving high-speed signal integrity.

How does the echo clock (CQ/CQ) improve system timing margin?

CQ and CQ are free-running, K/K-synchronized output clocks that track the same phase relationship as the Q[17:0] data outputs. By using CQ/CQ as capture clocks at the receiving end, systems achieve source-synchronous timing-removing skew between clock and data paths and enabling reliable 1200 MT/s operation without complex deskew circuitry.

Can CY7C2563XV18-600BZXC be used in depth-expanded configurations?

Yes. The device supports depth expansion using RPS (Read Port Select) and WPS (Write Port Select) pins to enable independent operation of multiple devices on the same data bus. Each chip responds only when its RPS or WPS is asserted, allowing seamless 4M × 18 → 8M × 18 or wider expansions without external logic.

CY7C2563XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2563XV18-600BZXC FAQ

1.How can I place an order for CY7C2563XV18-600BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2563XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2563XV18-600BZXC reliable?

The price and inventory of CY7C2563XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2563XV18-600BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2563XV18-600BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2563XV18-600BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2563XV18-600BZXC?

CY7C2563XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2563XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2563XV18-600BZXC?

For technical support, including CY7C2563XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2563XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C2563XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2563XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2563XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2563XV18-600BZXC?

All CY7C2563XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2563XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2563XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C2563XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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