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Cypress Semiconductor Corp CY7C2563XV18-633BZXC

Part No.:
CY7C2563XV18-633BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2563XV18-633BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:559

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Product details

Overview

CY7C2563XV18-633BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ Xtreme SRAM with 4M × 18 organization, 633 MHz clock frequency, 2.5-cycle read latency (DOFF = HIGH), and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs. It delivers 1266 MT/s DDR data rates on separate read/write ports and operates at 1.8 V core / 1.5 V I/O supply in high-bandwidth networking buffers.

For engineers reviewing the CY7C2563XV18-633BZXC datasheet, CY7C2563XV18-633BZXC pinout, CY7C2563XV18-633BZXC application, or CY7C2563XV18-633BZXC equivalent, key selection criteria include concurrent read/write port independence, echo clock (CQ/CQ) timing support, QVLD data validity signaling, HSTL I/O compatibility, and FBGA-165 package integration for high-speed SerDes interface buffering.

Technical Context

This QDR II+ Xtreme SRAM implements a synchronous pipelined architecture with fully independent read and write ports, enabling true concurrent transactions without bus turnaround. Its four-word burst transfers 72 bits per access (18-bit × 4), latched on alternating rising edges of K and K clocks.

The device integrates a PLL for precise data placement, supports programmable ODT via ZQ calibration and ODT pin voltage selection (RQ/3.33 or RQ/1.66), and uses echo clocks CQ/CQ aligned to output data for simplified high-speed capture - all while maintaining full data coherency across ports.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 633 MHz - enables 1266 MT/s DDR throughput on both ports
Read Latency 2.5 cycles (DOFF = HIGH); 1 cycle (DOFF = LOW) - selectable real-time mode
Core Supply Voltage 1.8 V ± 0.1 V - fixed low-voltage core for reduced power and noise
I/O Supply Range 1.4 V to 1.6 V - supports 1.5 V HSTL-compatible signaling
On-Die Termination Supported on D[17:0], BWS[1:0], K/K - eliminates external resistors and routing complexity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density PCB layout

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AC footprint.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; supports byte-write via BWS0/BWS1
Q[17:0] Synchronous read data output 18-bit parallel output edge-aligned with CQ/CQ; tristated when RPS deasserted
RPS Read port select (active LOW) Enables read burst of four words; sampled on rising edge of K clock
WPS Write port select (active LOW) Initiates write burst; sampled on rising edge of K clock; ignores D[x:0] when deasserted
A[19:0] Multiplexed address input 20-bit address shared by read/write ports; latched on alternating K/K edges
K / K Differential input clocks Rising edges control all synchronous inputs/outputs; K used for RPS/WPS/A; K for D/BWS
CQ / CQ Echo clocks (output) Free-running, K/K-synchronized clocks for timing-critical data capture at receiver
QVLD Data validity indicator Active-HIGH pulse aligned with valid Q[17:0] output; simplifies receiver synchronization
ODT On-die termination control Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); floating defaults to HIGH range
ZQ Impedance calibration reference Connected to precision external resistor (175–350 Ω) for ODT resistance tuning

Key Features

Feature Design Value
Separate read/write ports Eliminates data bus turnaround and contention - enables deterministic full-duplex operation
Four-word burst architecture Reduces effective address bus frequency by 4× versus single-word access - lowers routing congestion
Programmable read latency 2.5-cycle (QDR II+) or 1-cycle (QDR I) mode via DOFF pin - allows trade-off between latency and bandwidth
HSTL I/O with variable drive Ensures signal integrity at 1266 MT/s with impedance-matched, slew-rate-controlled outputs
JTAG 1149.1 test access port Enables boundary scan testing and in-system diagnostics without additional test fixtures

Applications

High-Speed Network Packet Buffering Telecom Line Card Data Path

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in 10G/25G switch ASIC interfaces.

IC Role / Device Role / Timing Role: Dual-port buffer decoupling ingress/egress data paths with zero turnaround delay.

Use Value: Concurrent 1266 MT/s reads and writes sustain line-rate traffic without FIFO bottlenecks or arbitration stalls.

Use Scenario: Holding frame headers and payload fragments during SONET/OTN framer processing in optical transport modules.

IC Role / Device Role / Timing Role: Low-latency, coherent memory for header lookup and payload reassembly pipelines.

Use Value: 2.5-cycle read latency with QVLD signaling enables precise timing alignment to SerDes recovery clocks.

Multi-Core Processor Cache Coherency Directory Test Equipment Pattern Memory

Use Scenario: Tracking cache state (MESI/MOESI) across eight or more CPU cores in embedded SoCs.

IC Role / Device Role / Timing Role: Shared directory memory accessed simultaneously by multiple agents via independent ports.

Use Value: Full data coherency and port-select isolation prevent race conditions during concurrent probe/writeback operations.

Use Scenario: Storing high-speed digital stimulus and expected response vectors in ATE pattern generators.

IC Role / Device Role / Timing Role: Deterministic, jitter-tolerant memory delivering synchronized bursts to pin electronics.

Use Value: Echo clocks CQ/CQ and QVLD eliminate setup/hold uncertainty at >1 GHz data rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit (2M × 18), 1 GHz max clock, 1.8 V core, no ODT, 136-ball FBGA Lacks ODT and echo clocks; requires external termination and tighter board-level timing closure Prefer when legacy system design already accommodates external termination and lower density suffices
ISSI IS61WV102418B 18-Mbit (512K × 36), 200 MHz max clock, 3.3 V only, async interface, SOJ-54 Asynchronous, no DDR, no burst, no ODT - fundamentally different architecture and performance class Only suitable for cost-sensitive, non-real-time buffering where bandwidth < 400 MB/s is acceptable

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C2563XV18-633BZXC uniquely combines 72-Mbit density, 1266 MT/s DDR throughput, integrated ODT, and echo-clock–assisted timing - making it optimal for new high-speed packet-processing designs requiring minimal board-level timing margin.

Availability

CY7C2563XV18-633BZXC is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card data path management, multi-core processor cache coherency directory storage, and automated test equipment pattern memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C2563XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2563XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, full-duplex data buffering in high-speed serial interface subsystems such as 10G/25G Ethernet, CPRI, and OTN framer applications.

FAQ

What is the function of the DOFF pin on CY7C2563XV18-633BZXC?

The DOFF (Data Output OFF) pin selects read latency mode: when driven HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency; when driven LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains latched until reset, enabling runtime latency tuning without changing clocking or control logic.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. A LOW on ODT selects RQ/3.33 (e.g., 175–350 Ω ZQ → 52–105 Ω termination); HIGH selects RQ/1.66 (e.g., 175–250 Ω ZQ → 105–150 Ω). ODT applies to D[17:0], BWS[1:0], and K/K inputs, eliminating need for 24+ external 50 Ω resistors and associated PCB area.

Can CY7C2563XV18-633BZXC be used with a single-ended clock source?

No - the device requires true differential K/K clock inputs. The internal timing architecture relies on complementary edges for address/data capture and output registration. Driving K with a clock and tying K to ground violates AC timing specifications and causes functional failure. A dedicated differential clock driver or transformer is mandatory.

What is the role of the QVLD signal in system timing?

QVLD is a synchronous, edge-aligned output that pulses HIGH for one K/K cycle precisely when Q[17:0] data is valid and stable. Unlike static enable signals, QVLD tracks burst boundaries and accounts for internal pipeline delays - allowing receivers to sample data without fixed delay tables or complex deskew logic, especially critical above 600 MHz.

CY7C2563XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2563XV18-633BZXC FAQ

1.How can I place an order for CY7C2563XV18-633BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2563XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2563XV18-633BZXC reliable?

The price and inventory of CY7C2563XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2563XV18-633BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2563XV18-633BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2563XV18-633BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2563XV18-633BZXC?

CY7C2563XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2563XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2563XV18-633BZXC?

For technical support, including CY7C2563XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2563XV18-633BZXC requirements.

6.How does Aetrix verify that CY7C2563XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2563XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2563XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2563XV18-633BZXC?

All CY7C2563XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2563XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2563XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C2563XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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