Cypress Semiconductor Corp CY7C2563XV18-633BZXC
- Part No.:
- CY7C2563XV18-633BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2563XV18-633BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:559
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Product details
Overview
CY7C2563XV18-633BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ Xtreme SRAM with 4M × 18 organization, 633 MHz clock frequency, 2.5-cycle read latency (DOFF = HIGH), and on-die termination (ODT) for D[17:0], BWS[1:0], and K/K inputs. It delivers 1266 MT/s DDR data rates on separate read/write ports and operates at 1.8 V core / 1.5 V I/O supply in high-bandwidth networking buffers.
For engineers reviewing the CY7C2563XV18-633BZXC datasheet, CY7C2563XV18-633BZXC pinout, CY7C2563XV18-633BZXC application, or CY7C2563XV18-633BZXC equivalent, key selection criteria include concurrent read/write port independence, echo clock (CQ/CQ) timing support, QVLD data validity signaling, HSTL I/O compatibility, and FBGA-165 package integration for high-speed SerDes interface buffering.
Technical Context
This QDR II+ Xtreme SRAM implements a synchronous pipelined architecture with fully independent read and write ports, enabling true concurrent transactions without bus turnaround. Its four-word burst transfers 72 bits per access (18-bit × 4), latched on alternating rising edges of K and K clocks.
The device integrates a PLL for precise data placement, supports programmable ODT via ZQ calibration and ODT pin voltage selection (RQ/3.33 or RQ/1.66), and uses echo clocks CQ/CQ aligned to output data for simplified high-speed capture - all while maintaining full data coherency across ports.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 configuration) |
| Max Clock Frequency | 633 MHz - enables 1266 MT/s DDR throughput on both ports |
| Read Latency | 2.5 cycles (DOFF = HIGH); 1 cycle (DOFF = LOW) - selectable real-time mode |
| Core Supply Voltage | 1.8 V ± 0.1 V - fixed low-voltage core for reduced power and noise |
| I/O Supply Range | 1.4 V to 1.6 V - supports 1.5 V HSTL-compatible signaling |
| On-Die Termination | Supported on D[17:0], BWS[1:0], K/K - eliminates external resistors and routing complexity |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density PCB layout |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on rising edges of K/K; supports byte-write via BWS0/BWS1 |
| Q[17:0] | Synchronous read data output | 18-bit parallel output edge-aligned with CQ/CQ; tristated when RPS deasserted |
| RPS | Read port select (active LOW) | Enables read burst of four words; sampled on rising edge of K clock |
| WPS | Write port select (active LOW) | Initiates write burst; sampled on rising edge of K clock; ignores D[x:0] when deasserted |
| A[19:0] | Multiplexed address input | 20-bit address shared by read/write ports; latched on alternating K/K edges |
| K / K | Differential input clocks | Rising edges control all synchronous inputs/outputs; K used for RPS/WPS/A; K for D/BWS |
| CQ / CQ | Echo clocks (output) | Free-running, K/K-synchronized clocks for timing-critical data capture at receiver |
| QVLD | Data validity indicator | Active-HIGH pulse aligned with valid Q[17:0] output; simplifies receiver synchronization |
| ODT | On-die termination control | Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); floating defaults to HIGH range |
| ZQ | Impedance calibration reference | Connected to precision external resistor (175–350 Ω) for ODT resistance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround and contention - enables deterministic full-duplex operation |
| Four-word burst architecture | Reduces effective address bus frequency by 4× versus single-word access - lowers routing congestion |
| Programmable read latency | 2.5-cycle (QDR II+) or 1-cycle (QDR I) mode via DOFF pin - allows trade-off between latency and bandwidth |
| HSTL I/O with variable drive | Ensures signal integrity at 1266 MT/s with impedance-matched, slew-rate-controlled outputs |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system diagnostics without additional test fixtures |
Applications
| High-Speed Network Packet Buffering | Telecom Line Card Data Path |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in 10G/25G switch ASIC interfaces. IC Role / Device Role / Timing Role: Dual-port buffer decoupling ingress/egress data paths with zero turnaround delay. Use Value: Concurrent 1266 MT/s reads and writes sustain line-rate traffic without FIFO bottlenecks or arbitration stalls. |
Use Scenario: Holding frame headers and payload fragments during SONET/OTN framer processing in optical transport modules. IC Role / Device Role / Timing Role: Low-latency, coherent memory for header lookup and payload reassembly pipelines. Use Value: 2.5-cycle read latency with QVLD signaling enables precise timing alignment to SerDes recovery clocks. |
| Multi-Core Processor Cache Coherency Directory | Test Equipment Pattern Memory |
|
Use Scenario: Tracking cache state (MESI/MOESI) across eight or more CPU cores in embedded SoCs. IC Role / Device Role / Timing Role: Shared directory memory accessed simultaneously by multiple agents via independent ports. Use Value: Full data coherency and port-select isolation prevent race conditions during concurrent probe/writeback operations. |
Use Scenario: Storing high-speed digital stimulus and expected response vectors in ATE pattern generators. IC Role / Device Role / Timing Role: Deterministic, jitter-tolerant memory delivering synchronized bursts to pin electronics. Use Value: Echo clocks CQ/CQ and QVLD eliminate setup/hold uncertainty at >1 GHz data rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (2M × 18), 1 GHz max clock, 1.8 V core, no ODT, 136-ball FBGA | Lacks ODT and echo clocks; requires external termination and tighter board-level timing closure | Prefer when legacy system design already accommodates external termination and lower density suffices |
| ISSI IS61WV102418B | 18-Mbit (512K × 36), 200 MHz max clock, 3.3 V only, async interface, SOJ-54 | Asynchronous, no DDR, no burst, no ODT - fundamentally different architecture and performance class | Only suitable for cost-sensitive, non-real-time buffering where bandwidth < 400 MB/s is acceptable |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C2563XV18-633BZXC uniquely combines 72-Mbit density, 1266 MT/s DDR throughput, integrated ODT, and echo-clock–assisted timing - making it optimal for new high-speed packet-processing designs requiring minimal board-level timing margin.
Availability
CY7C2563XV18-633BZXC is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card data path management, multi-core processor cache coherency directory storage, and automated test equipment pattern memory requiring stable component supply and long-term industrial availability.
Supply support for CY7C2563XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C2563XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, full-duplex data buffering in high-speed serial interface subsystems such as 10G/25G Ethernet, CPRI, and OTN framer applications.
FAQ
What is the function of the DOFF pin on CY7C2563XV18-633BZXC?
The DOFF (Data Output OFF) pin selects read latency mode: when driven HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency; when driven LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains latched until reset, enabling runtime latency tuning without changing clocking or control logic.
How does on-die termination (ODT) work on this SRAM?
ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. A LOW on ODT selects RQ/3.33 (e.g., 175–350 Ω ZQ → 52–105 Ω termination); HIGH selects RQ/1.66 (e.g., 175–250 Ω ZQ → 105–150 Ω). ODT applies to D[17:0], BWS[1:0], and K/K inputs, eliminating need for 24+ external 50 Ω resistors and associated PCB area.
Can CY7C2563XV18-633BZXC be used with a single-ended clock source?
No - the device requires true differential K/K clock inputs. The internal timing architecture relies on complementary edges for address/data capture and output registration. Driving K with a clock and tying K to ground violates AC timing specifications and causes functional failure. A dedicated differential clock driver or transformer is mandatory.
What is the role of the QVLD signal in system timing?
QVLD is a synchronous, edge-aligned output that pulses HIGH for one K/K cycle precisely when Q[17:0] data is valid and stable. Unlike static enable signals, QVLD tracks burst boundaries and accounts for internal pipeline delays - allowing receivers to sample data without fixed delay tables or complex deskew logic, especially critical above 600 MHz.
CY7C2563XV18-633BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 633 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2563XV18-633BZXC FAQ
1.How can I place an order for CY7C2563XV18-633BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2563XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2563XV18-633BZXC reliable?
The price and inventory of CY7C2563XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2563XV18-633BZXC is usually 5 days.
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Once your CY7C2563XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2563XV18-633BZXC?
For technical support, including CY7C2563XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2563XV18-633BZXC requirements.
6.How does Aetrix verify that CY7C2563XV18-633BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2563XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2563XV18-633BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2563XV18-633BZXC?
All CY7C2563XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2563XV18-633BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2563XV18-633BZXC part is unused and in its original packaging.
Return procedure for CY7C2563XV18-633BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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