Cypress Semiconductor Corp CY7C2564XV18-450BZC

Overview

CY7C2564XV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 450 MHz clock support (900 Mbps DDR data rate), 2.5-cycle read latency when DOFF = HIGH, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-used in high-bandwidth packet buffering for network line cards.

For engineers reviewing the CY7C2564XV18 datasheet, CY7C2564XV18 pinout, CY7C2564XV18 application, or CY7C2564XV18 equivalent, key selection criteria include burst depth (2-word), HSTL I/O compatibility, echo clock timing (CQ/CQ), QVLD validity signaling, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This SRAM implements QDR II+ architecture with fully independent synchronous read and write ports sharing one multiplexed address bus, enabling concurrent transactions without bus turnaround. It uses dual input clocks (K and K) - both rising-edge triggered - to latch addresses and data, while echo clocks (CQ and CQ) align with output data edges for precise capture.

The device integrates a PLL for accurate internal timing alignment and supports programmable ODT via the ODT pin and external ZQ resistor, selecting either RQ/3.33 (low range) or RQ/1.66 (high range) termination values. Read latency is configurable: 2.5 cycles (DOFF = HIGH) for QDR II+ mode or 1 cycle (DOFF = LOW) emulating QDR I behavior.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102436B, CY7C2564XV18 delivers highest bandwidth (900 Mbps DDR), integrated ODT for routing simplicity, and QVLD/CQ timing aids - critical for new designs targeting >10 Gbps packet processing.

Availability

CY7C2564XV18 is available at Aetrix Electronics and suitable for high-speed network packet buffering, telecom line card data paths, ATE pattern memory, and FPGA co-processor cache applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C2564XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2564XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in networking and test equipment where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C2564XV18?

The DOFF (Data-Off) pin configures read latency mode: when HIGH, it enables QDR II+ operation with 2.5-cycle read latency; when LOW, it reverts to QDR I mode with 1-cycle latency. This allows system designers to trade off timing margin for bandwidth determinism based on clock skew and PCB layout constraints.

How does on-die termination (ODT) work on CY7C2564XV18?

ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. A LOW on ODT selects RQ/3.33 termination (175–350 Ω range); HIGH selects RQ/1.66 (175–250 Ω). ODT applies to D[35:0], BWS[3:0], and K/K inputs, eliminating need for external series or parallel termination resistors.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned echoes of the K and K input clocks. They are output-synchronized to Q[x] data transitions and used by receiving logic (e.g., FPGA IDELAY/ISERDES) to sample Q[x] with minimal setup/hold uncertainty - essential for reliable 450 MHz DDR capture without complex deskew circuitry.

Can CY7C2564XV18 be used in place of CY7C2562XV18?

No - they differ in density and pinout: CY7C2564XV18 is 2M × 36 (72 Mbit) in 165-ball FBGA, while CY7C2562XV18 is 4M × 18 (72 Mbit) in same package but with different D/Q/BWS pin assignments. Though functionally similar, they are not pin-compatible; migration requires PCB redesign and address/data bus remapping.