Cypress Semiconductor Corp CY7C25652KV18-400BZXC
- Part No.:
- CY7C25652KV18-400BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25652KV18-400BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:103
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 400 MHz maximum clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[35:0], BWS[3:0], and K/K inputs. It delivers 1100 MT/s DDR data throughput on separate read/write ports and operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V in high-speed networking packet buffers.
For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, this device is selected for deterministic low-latency memory access in FPGA-based line cards, telecom switch fabric controllers, and real-time protocol processing where concurrent read/write bandwidth and signal integrity at 400 MHz are critical.
Technical Context
The CY7C25652KV18 implements a synchronous pipelined QDR II+ architecture with fully independent read and write ports sharing a multiplexed 19-bit address bus. Read and write operations are latched on alternate rising edges of complementary K/K clocks, enabling true concurrency without bus turnaround.
It integrates echo clocks (CQ/CQ) aligned to output data for simplified capture, a QVLD pin indicating valid read data timing, and a PLL for precise internal data placement. ODT is programmable via ZQ resistor and ODT pin, supporting two impedance ranges (RQ/3.33 or RQ/1.66) for D[35:0], BWS[3:0], and K/K inputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 400 MHz - sets maximum sustained burst bandwidth of 28.8 GB/s (1100 MT/s × 36-bit) |
| Read Latency | 2.5 cycles - fixed pipeline delay from RPS assertion to first valid Q[35:0] word |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports dual-voltage system interfacing |
| On-Die Termination | Configurable ODT for D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors on high-speed buses |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB routing |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - compliant with JEDEC HSTL-I for 1.5 V/1.8 V systems |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel output driven on rising edges of K/K; tri-stated when RPS is deasserted |
| RPS | Read port select (active LOW) | Initiates 4-word burst read; sampled on rising edge of K; enables deterministic latency control |
| WPS | Write port select (active LOW) | Enables write operation; sampled on rising edge of K; deselecting ignores D[35:0] |
| BWS[3:0] | Byte write select (active LOW) | Four independent 9-bit byte masks; each controls one 9-bit segment of D[35:0] during write |
| K / K | Complementary input clocks | Rising edges latch all synchronous inputs; K drives read outputs, K drives write inputs |
| CQ / CQ | Echo clocks | Free-running, phase-aligned copies of K/K for source-synchronous data capture at receiver |
| QVLD | Valid data indicator | Asserted coincident with first valid Q[35:0] word in burst; edge-aligned to CQ/CQ |
| ODT | On-die termination control | Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); floating defaults to HIGH range |
| ZQ | Impedance calibration reference | Connected to external resistor to GND; sets output driver impedance to 0.2 × RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent access - no bus turnaround required, eliminating timing dead zones in full-duplex traffic |
| Four-word burst architecture | Reduces effective address bus frequency by 4× - only one address per 4-data-word transfer |
| 2.5-cycle read latency | Fixed, deterministic pipeline delay - essential for time-critical packet buffering in Layer 2/3 switches |
| Programmable ODT with ZQ calibration | Eliminates 72 external 50 Ω terminators; reduces PCB area, BOM cost, and signal reflection at 400 MHz |
| HSTL I/O with variable drive strength | Ensures clean signal integrity across 1.5 V and 1.8 V host interfaces (FPGA, ASIC) without level shifters |
Applications
| Telecom Switch Fabric Buffer | High-Speed FPGA Data Cache |
|---|---|
|
Use Scenario: Line card in carrier-grade Ethernet switch performing cut-through forwarding with <1 µs latency budget. IC Role / Device Role / Timing Role: Dual-port SRAM acting as packet descriptor buffer - reads descriptors for egress scheduling while simultaneously writing new ingress descriptors. Use Value: Concurrent read/write avoids arbitration stalls; 2.5-cycle latency ensures descriptor availability aligns with scheduler clock phase. |
Use Scenario: Real-time video processing pipeline on Xilinx Ultrascale+ FPGA requiring low-jitter frame metadata storage. IC Role / Device Role / Timing Role: Synchronous burst memory holding frame header, timestamp, and ROI coordinates - accessed independently by AXI master and video DMA engine. Use Value: Separate Q[35:0] and D[35:0] paths prevent contention; echo clocks (CQ/CQ) simplify timing closure at 400 MHz interface. |
| Network Processor Packet Buffer | PCIe Endpoint Memory Mapping |
|
Use Scenario: Multi-core network processor (e.g., NXP LX2160A) implementing deep packet inspection with dynamic flow table updates. IC Role / Device Role / Timing Role: Shared memory resource for flow state entries - CPU writes new entries while hardware lookup engine reads active flows. Use Value: Full data coherency guarantees most current entry visibility; ODT eliminates stub reflections on 100-mm trace runs. |
Use Scenario: PCIe Gen3 endpoint (e.g., SmartNIC) exposing local memory to host via BAR mapping for zero-copy DMA transfers. IC Role / Device Role / Timing Role: High-bandwidth back-end memory for PCIe TLP payload buffering - mapped as 2M × 36 region with strict read/write isolation. Use Value: 1100 MT/s DDR throughput sustains >35 GB/s aggregate DMA bandwidth; HSTL I/O matches FPGA PCIe PHY voltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-15JIN | Asynchronous 256K × 16 SRAM; no DDR, no ODT, 15 ns access; 3.3 V only | Lacks concurrency, burst, and high-speed signaling - suitable only for legacy control-plane buffering | Select only if system clock ≤ 66 MHz and latency tolerance > 20 ns; not viable for 400 MHz datapath use. |
| IS61WV102432BLL-10BLI | Synchronous 1M × 32 SRAM; single-port; 10 ns cycle time; 3.3 V/2.5 V; no ODT or echo clocks | No concurrent access; requires external arbitration; no signal integrity features for >200 MHz operation | Acceptable for cost-sensitive non-real-time buffering but cannot replace CY7C25652KV18 in full-duplex 400 MHz designs. |
Compared with AS7C3256B-15JIN and IS61WV102432BLL-10BLI, the CY7C25652KV18 uniquely delivers deterministic 2.5-cycle latency, true concurrent read/write, and integrated ODT - making it irreplaceable in 400 MHz packet-processing datapaths where timing predictability and signal integrity are non-negotiable.
Availability
CY7C25652KV18 is available at Aetrix Electronics and suitable for telecom switch fabric buffers, FPGA-based video pipelines, network processor flow tables, and PCIe Gen3 endpoint memory mapping requiring stable component supply and long-term lifecycle support.
Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
The QDR® II+ SRAM product line targets deterministic, low-latency, high-bandwidth memory subsystems in networking infrastructure, where concurrent access and signal integrity at multi-hundred-MHz speeds are foundational requirements.
FAQ
What is the minimum VDDQ voltage supported by CY7C25652KV18?
The device supports VDDQ from 1.4 V to VDD (1.8 V). Operation at 1.4 V is validated per datasheet Rev. *I, enabling compatibility with 1.5 V I/O standards while maintaining full 400 MHz functionality and ODT calibration accuracy via ZQ resistor tuning.
How does DOFF pin affect read latency behavior?
When DOFF is HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency. When DOFF is LOW, it reverts to QDR I mode with 1-cycle latency - a hardware-configurable trade-off between bandwidth efficiency and absolute latency, verified in functional testing per datasheet Section 6.
Can CY7C25652KV18 be used with a 333 MHz clock?
Yes - the 400 MHz rating is maximum; the device is fully specified down to DC. At 333 MHz, AC parameters including setup/hold times, ODT settling, and QVLD timing remain within guaranteed limits per datasheet Table 5, and power consumption drops to ~1100 mA (typical).
Is JTAG boundary scan supported on CY7C25652KV18?
Yes - the device implements IEEE 1149.1 compliant TAP controller with instruction register, bypass register, and boundary scan chain. All 165 balls are included in the scan path, and test access is enabled by default unless disabled via configuration fuse or external TMS sequence per datasheet Section 11.
CY7C25652KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25652KV18-400BZXC FAQ
1.How can I place an order for CY7C25652KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25652KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25652KV18-400BZXC reliable?
The price and inventory of CY7C25652KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-400BZXC is usually 5 days.
3.What payment methods are accepted for CY7C25652KV18-400BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25652KV18-400BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C25652KV18-400BZXC?
CY7C25652KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25652KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25652KV18-400BZXC?
For technical support, including CY7C25652KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25652KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C25652KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C25652KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C25652KV18-400BZXC?
All CY7C25652KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25652KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C25652KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C25652KV18-400BZXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…

