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Cypress Semiconductor Corp CY7C25652KV18-400BZXI

Part No.:
CY7C25652KV18-400BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25652KV18-400BZXI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:253

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Product details

Overview

CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 400 MHz maximum clock frequency, 2.5-cycle read latency, on-die termination (ODT), and HSTL I/O interfaces operating at 1.4 V to 1.8 V. It delivers 1100 MT/s data rate via DDR read/write ports and supports concurrent read/write transactions in high-bandwidth networking packet buffers.

For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, key selection criteria include burst depth (four-word), echo clock (CQ/CQ) timing support, DOFF-configurable latency mode, ODT impedance control via ZQ, and FBGA-165 package compatibility with high-speed PCB routing constraints.

Technical Context

This device implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual input clocks (K and K) - both rising-edge triggered - to latch addresses and data, enabling full-duplex operation without arbitration overhead.

The integrated PLL ensures precise data placement relative to echo clocks (CQ/CQ), while the QVLD signal provides edge-aligned validity indication for sampled output data. ODT is configurable per D[35:0], BWS[3:0], and K/K inputs using external ZQ resistor tuning, supporting system-level impedance matching without discrete terminators.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency400 MHz - sets maximum sustained bandwidth of 28.8 GB/s (1100 MT/s × 36-bit)
Read Latency2.5 cycles - fixed when DOFF = HIGH; enables deterministic timing for pipeline-constrained systems
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V logic families
On-Die TerminationConfigurable ODT for D[35:0], BWS[3:0], K/K - eliminates need for 72 external 50 Ω resistors
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density routing and thermal dissipation in switch fabric modules
Core SupplyVDD = 1.8 V ± 0.1 V - defines internal SRAM array voltage tolerance and power integrity margin

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsLatched on rising edges of K/K; full 36-bit parallel write path with byte-selectable masking via BWS[3:0]
Q[35:0]Synchronous read data outputsDDR outputs aligned to CQ/CQ; tri-stated automatically when RPS is deasserted
RPS / WPSActive-low port select controlsIndependent enable for read/write ports - enables depth expansion without external gating logic
BWS[3:0]Byte write select inputsEach controls 9-bit segment of D[35:0]; allows partial-word writes without read-modify-write cycles
K / KDual-phase input clocksBoth rising edges used for DDR timing; K drives read operations, K drives write operations
CQ / CQFree-running echo clocksPhase-locked to K/K; simplifies capture timing in FPGA/ASIC receivers by eliminating setup/hold uncertainty
QVLDData validity indicatorAsserted synchronously with first valid Q[35:0] word in burst - eliminates need for fixed delay counters in controller logic
ZQImpedance calibration referenceConnects to external resistor to ground; sets output driver strength to match 50 Ω transmission lines
ODTOn-die termination controlLOW selects RQ/3.33 (~175–350 Ω range); HIGH selects RQ/1.66 (~175–250 Ω range)

Key Features

FeatureDesign Value
Four-word burst architectureReduces address bus toggling by 75% vs. single-word access - lowers EMI and routing congestion in backplane designs
Separate read/write data portsEnables true concurrent read and write operations - critical for full-duplex packet buffering in 10G/25G Ethernet switches
Programmable ODT with ZQ calibrationEliminates 76 external termination resistors (D[35:0], BWS[3:0], K/K) - saves >12 mm² PCB area and reduces BOM cost
Echo clock synchronization (CQ/CQ)Removes ±100 ps skew uncertainty in high-speed data capture - enables reliable sampling at 1100 MT/s without dynamic deskew logic
DOFF-configurable latency modeSwitches between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency - supports migration from legacy QDR I systems

Applications

High-Speed Network Packet BufferTelecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as zero-latency buffer between MAC and traffic manager ASICs.

Use Value: Concurrent read/write capability eliminates arbitration stalls; 2.5-cycle latency ensures sub-10 ns response time for priority queue lookups.

Use Scenario: Holding frame headers and metadata in 40G/100G OTN line cards requiring deterministic access timing.

IC Role / Device Role / Timing Role: Burst-mode memory interfacing directly with SerDes PHYs via DDR-aligned echo clocks.

Use Value: CQ/CQ alignment enables error-free capture at 1100 MT/s without retiming FIFOs; ODT simplifies 10-layer backplane routing.

Baseband Processing CacheTest Equipment Pattern Memory

Use Scenario: Acting as L2 cache for LTE/5G baseband processors handling real-time FFT and channel estimation.

IC Role / Device Role / Timing Role: High-throughput memory co-processor feeding parallel DSP clusters with burst-aligned data streams.

Use Value: Four-word burst delivers 144-bit chunks per cycle - matches 36-bit SIMD register width and avoids partial-word stalls.

Use Scenario: Storing stimulus/response patterns in automated test equipment for high-pin-count SoC validation.

IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to pattern generator clocks with QVLD-driven handshake.

Use Value: QVLD signal replaces complex strobe generation logic; enables cycle-accurate pattern replay at 400 MHz without jitter accumulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36150550 MHz max clock; 2.5-cycle latency; ×36 config; no ODT or ZQ calibrationRequires external 50 Ω terminators on all 36 data lines and clocks - increases board area and signal integrity riskSelect when higher clock speed is required and board space permits discrete termination network
ISSI IS61WV102436B166 MHz max clock; asynchronous interface; ×36 config; no DDR or echo clocksLacks concurrent read/write and burst capability - limits throughput to ~6 Gbps vs. 28.8 GB/s of CY7C25652KV18Select only for cost-sensitive, low-bandwidth control-plane memory where latency determinism is not required

Compared with IDT72T36150 and ISSI IS61WV102436B, CY7C25652KV18 uniquely integrates ODT, echo clocks, and QVLD to reduce system-level timing complexity - making it optimal for 400 MHz+ deterministic memory subsystems where PCB area and signal integrity are constrained.

Availability

CY7C25652KV18 is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, baseband processing caches, and test equipment pattern memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The QDR® II+ SRAM product line targets deterministic, high-bandwidth memory subsystems in networking infrastructure - specifically engineered to replace asynchronous SRAMs and simplify DDR interface design in switch fabric and packet processing ASICs.

FAQ

What is the function of the DOFF pin on CY7C25652KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled during initialization and remains static during normal operation - it does not support dynamic switching between modes.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, allowing the device to measure reference current and adjust internal output driver strength to match 50 Ω transmission lines. Output impedance is set to 0.2 × RQ, so a 240 Ω ZQ resistor yields 48 Ω drive strength - ensuring minimal reflection on high-speed data buses.

Can CY7C25652KV18 operate with only one clock input?

No - the device requires both K and K clock inputs. Although both are rising-edge triggered, they serve distinct roles: K controls read-port timing (address latching and Q[35:0] output), while K controls write-port timing (address latching and D[35:0] sampling). Using only one clock violates timing specifications and prevents concurrent operation.

What happens to Q[35:0] outputs when RPS is deasserted?

When RPS is deasserted (HIGH), the read port is deselected and Q[35:0] outputs enter high-impedance (tri-state) mode on the next rising edge of the K clock. This behavior is synchronous and automatic - no additional control signals or delay circuits are needed to manage bus contention during port switching.

CY7C25652KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25652KV18-400BZXI FAQ

1.How can I place an order for CY7C25652KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C25652KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25652KV18-400BZXI reliable?

The price and inventory of CY7C25652KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C25652KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25652KV18-400BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C25652KV18-400BZXI?

CY7C25652KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25652KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25652KV18-400BZXI?

For technical support, including CY7C25652KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25652KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C25652KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C25652KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C25652KV18-400BZXI?

All CY7C25652KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25652KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C25652KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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