Cypress Semiconductor Corp CY7C25652KV18-500BZI
- Part No.:
- CY7C25652KV18-500BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25652KV18-500BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:224
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Product details
Overview
CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 2.5-cycle read latency, 550 MHz clock operation (1100 MT/s DDR), on-die termination (ODT), and HSTL I/O interfaces. It delivers concurrent read/write throughput for high-speed packet buffering in network switches and routers.
For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, key selection criteria include burst depth (4-word), ODT support for D[35:0]/BWS[3:0]/K/K, echo clock timing (CQ/CQ), QVLD validity signaling, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility.
Technical Context
The device implements a synchronous pipelined architecture with fully independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K and K clocks, enabling true concurrency without bus turnaround.
It uses a PLL for precise data placement and supports dual VDDQ (1.4–1.8 V) with HSTL-18/15-compatible drivers. The DOFF pin selects between 2.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, maintaining functional alignment with legacy QDR I systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 organization) |
| Maximum Clock Frequency | 550 MHz - enables 1100 MT/s DDR data rate on both ports |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned data capture |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, reduces PCB area and routing complexity |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - interoperable with 1.5 V and 1.8 V system rails |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density memory subsystems |
| Core Supply | VDD = 1.8 V ± 0.1 V - low-power, noise-immune core operation |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel output aligned with CQ/CQ; tri-stated when RPS is deasserted |
| RPS / WPS | Read/Write port select | Active-low control signals sampled on K rising edge; enable independent port activation |
| BWS[3:0] | Byte write select | Four active-low signals controlling 9-bit byte lanes; allows partial-word writes without read-modify-write |
| K / K | Differential clock inputs | Rising-edge-triggered clocks for all synchronous operations; K used for address/control, K for data |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of K/K; simplify high-speed data capture at receiver |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ; asserts one cycle before first valid Q[35:0] word in burst |
| ODT | On-die termination control | Selects ODT range (LOW = RQ/3.33, HIGH = RQ/1.66); default HIGH if floating |
| ZQ | Impedance calibration reference | Connects to external resistor to ground (175–350 Ω); sets output driver impedance to 0.2 × RQ |
Key Features
| Feature | Design Value |
|---|---|
| Four-word burst architecture | Reduces address bus frequency by 4× versus single-word access; lowers routing congestion and timing closure effort |
| Separate read/write data paths | Eliminates bidirectional bus turnaround delay; enables full-duplex 1100 MT/s throughput per port |
| Programmable read latency (1 or 2.5 cycles) | DOFF pin selects mode - maintains backward compatibility with QDR I while enabling higher bandwidth in new designs |
| HSTL-18/15-compatible I/O | Supports 1.5 V and 1.8 V I/O rails without level shifters; simplifies integration into mixed-voltage ASIC/FPGA systems |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system programming; supports production test and debug without additional probes |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM acting as a zero-latency, concurrent-access buffer between line-rate MAC and traffic manager ASICs. Use Value: 2.5-cycle latency and 1100 MT/s DDR throughput ensure no packet loss under sustained 40 Gbps line rates. |
Use Scenario: Capturing real-time waveform samples in automated test equipment (ATE) with >1 GS/s sampling. IC Role / Device Role / Timing Role: High-bandwidth acquisition memory interfacing directly to FPGA-based pattern generators and comparators. Use Value: Echo clocks (CQ/CQ) and QVLD eliminate setup/hold uncertainty, enabling reliable 550 MHz capture without external delay tuning. |
| Telecom Baseband Processing | FPGA Co-Processing Buffer |
|
Use Scenario: Temporary storage of OFDM symbol data between FFT/IFFT blocks in LTE/5G baseband units. IC Role / Device Role / Timing Role: Low-latency, burst-oriented memory supporting parallel read/write of complex IQ samples across multiple processing stages. Use Value: On-die termination (ODT) on all data and clock inputs reduces signal integrity margin loss, critical for 550 MHz DDR eye opening. |
Use Scenario: Offloading memory-intensive tasks (e.g., matrix transpose, histogram accumulation) from FPGA logic fabric. IC Role / Device Role / Timing Role: Dedicated high-throughput memory resource accessible via AXI or custom parallel interface, decoupling compute and memory bandwidth. Use Value: 165-ball FBGA footprint matches FPGA memory interface layouts; HSTL compatibility avoids level-shifter components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150 | 72-Mbit (2M × 36), 500 MHz max clock, no ODT, LVDS I/O, different pinout | Lacks on-die termination and echo clocks; requires external termination and tighter board-level timing control | Preferred where LVDS signaling and lower power at 500 MHz are prioritized over 550 MHz bandwidth and simplified layout |
| ISSI IS61WV102432BLL | 32-Mbit (1M × 32), 200 MHz async SRAM, no DDR, no burst, CMOS I/O | Asynchronous, single-port, no echo clocks or QVLD; significantly lower bandwidth and concurrency capability | Only suitable for cost-sensitive, non-real-time buffering where 1100 MT/s and concurrent access are not required |
Compared with IDT72T36150 and IS61WV102432BLL, CY7C25652KV18 uniquely combines 550 MHz DDR operation, ODT, echo clocks, and QVLD in a single 165-ball FBGA - delivering superior signal integrity, timing margin, and system-level integration for high-end networking and test equipment.
Availability
CY7C25652KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and FPGA co-processing buffer applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C25652KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in infrastructure-grade networking and test equipment.
FAQ
What is the function of the DOFF pin on CY7C25652KV18?
The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for maximum bandwidth; when LOW, it reverts to 1-cycle latency compatible with QDR I timing. This pin is sampled at power-up and remains static during operation - it cannot be toggled dynamically during normal use.
How does on-die termination (ODT) work on CY7C25652KV18?
ODT applies programmable termination resistance to D[35:0], BWS[3:0], K, and K inputs using an internal resistor network calibrated via the ZQ pin. ODT range (low/high) is selected by the ODT pin voltage, and values scale with the external ZQ resistor (175–350 Ω). No external resistors are needed, reducing PCB layer count and improving signal integrity at 550 MHz.
Can CY7C25652KV18 operate with 1.5 V I/O supply?
Yes - VDDQ supports 1.4 V to 1.8 V, explicitly including 1.5 V operation. The device uses HSTL-compatible output drivers that meet HSTL Class I specifications at 1.5 V, and input thresholds are designed for robust recognition of 1.5 V logic levels without level shifters or voltage translation.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned output copies of the K and K input clocks. They provide a local timing reference at the memory output pins, allowing receivers to latch Q[35:0] data with minimal skew. Unlike source-synchronous clocks in other protocols, CQ/CQ are not delayed or adjusted - their fixed relationship to QVLD and data edges simplifies high-speed capture in FPGA-based systems.
CY7C25652KV18-500BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 500 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25652KV18-500BZI FAQ
1.How can I place an order for CY7C25652KV18-500BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25652KV18-500BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25652KV18-500BZI reliable?
The price and inventory of CY7C25652KV18-500BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-500BZI is usually 5 days.
3.What payment methods are accepted for CY7C25652KV18-500BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25652KV18-500BZI transactions.
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Once your CY7C25652KV18-500BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25652KV18-500BZI?
For technical support, including CY7C25652KV18-500BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25652KV18-500BZI requirements.
6.How does Aetrix verify that CY7C25652KV18-500BZI is sourced from the original manufacturer or authorized distributors?
All CY7C25652KV18-500BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-500BZI meets industry standards.
7.What is the process for return or replacement of CY7C25652KV18-500BZI?
All CY7C25652KV18-500BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-500BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25652KV18-500BZI part is unused and in its original packaging.
Return procedure for CY7C25652KV18-500BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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