Cypress Semiconductor Corp CY7C25652KV18-550BZXI
- Part No.:
- CY7C25652KV18-550BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25652KV18-550BZXI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:685
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Product details
Overview
CY7C25652KV18 from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[35:0], BWS[3:0], and K/K inputs. It delivers 1100 MT/s DDR data rates on independent read/write ports and operates at core VDD = 1.8 V ± 0.1 V with I/O VDDQ = 1.4–1.8 V, targeting high-bandwidth packet buffering in network line cards.
For engineers reviewing the CY7C25652KV18 datasheet, CY7C25652KV18 pinout, CY7C25652KV18 application, or CY7C25652KV18 equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, and FBGA-165 package compatibility with high-speed PCB routing constraints.
Technical Context
The device implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual input clocks (K and K) - both rising edges drive DDR transfers - and embeds a PLL for precise data placement relative to echo clocks CQ/CQ.
All address latching, byte write select sampling (BWS[3:0]), and port enable control (RPS/WPS) are synchronized to K or K edges. The 2.5-cycle read latency is configurable via DOFF pin: HIGH enables QDR II+ mode; LOW reverts to 1-cycle QDR I behavior. ODT impedance ranges (RQ/1.66 or RQ/3.33) are selected by ODT pin state at power-up.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR throughput per port |
| Read Latency | 2.5 clock cycles - deterministic timing for pipeline scheduling in switch fabric controllers |
| VDD / VDDQ | Core: 1.8 V ± 0.1 V; I/O: 1.4–1.8 V - supports mixed-voltage system integration |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors on critical high-speed buses |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for thermal and signal integrity in dense router PCBs |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - compliant with JEDEC JESD8-15A for 1.5/1.8 V systems |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Sampled on rising edges of K/K; 36-bit parallel path for full-word burst writes |
| Q[35:0] | Synchronous read data outputs | Driven on rising edges of K/K; edge-aligned with CQ/CQ and qualified by QVLD |
| RPS / WPS | Read/Write Port Select (active LOW) | Enables independent port arbitration; deassertion tri-states Q[35:0] or ignores D[35:0] |
| BWS[3:0] | Byte Write Select inputs | Each controls 9-bit segment of D[35:0]; allows partial-word updates without read-modify-write |
| K / K | Dual-phase input clocks | Both rising edges used for DDR sampling; K drives RPS/A/D[35:0]/BWS[3:0], K drives WPS/A |
| CQ / CQ | Echo clocks (output) | Free-running, phase-aligned copies of K/K; simplify capture timing in FPGA-based memory controllers |
| QVLD | Valid data indicator | Asserted synchronously with first valid Q[35:0] word in burst; eliminates need for fixed delay tracking |
| ODT | On-die termination control | Selects ODT range at power-up: LOW → RQ/3.33 (~175–350 Ω), HIGH → RQ/1.66 (~175–250 Ω) |
| ZQ | Impedance calibration reference | Connects to external resistor to ground; sets output driver impedance to 0.2 × RQ for CQ/CQ/Q[35:0] |
Key Features
| Feature | Design Value |
|---|---|
| Four-word burst architecture | Reduces effective address bus frequency by 4×, lowering routing congestion and skew sensitivity in backplane designs |
| Separate read/write ports | Enables true concurrent access - e.g., simultaneous packet header read + payload write - without arbitration stalls |
| Configurable 2.5/1-cycle read latency | DOFF pin selects between QDR II+ (HIGH) and QDR I (LOW) modes, enabling backward compatibility in legacy systems |
| HSTL I/O with variable drive strength | Matches JEDEC standards while allowing drive optimization for trace length and loading - reduces signal integrity margin loss |
| JTAG 1149.1 test access port | Supports boundary scan testing of interconnects in high-density BGA layouts without requiring physical probe access |
Applications
| Network Packet Buffering | Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet queues in 10G/40G Ethernet line cards where low-latency random access is required. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM serving as shared buffer memory between ingress parser and egress scheduler ASICs. Use Value: 2.5-cycle latency and concurrent R/W ports reduce head-of-line blocking; ODT simplifies layout of 1100 MT/s DDR buses. |
Use Scenario: Implementing context-switch tables and lookup result caches in modular switch fabric controllers. IC Role / Device Role / Timing Role: Deterministic-access memory for forwarding engine metadata storage, synchronized to fabric clock domain. Use Value: Four-word burst and echo clocks (CQ/CQ) align data capture precisely in FPGA-based control logic, minimizing setup/hold violations. |
| Telecom Baseband Processing | High-Speed Test Equipment Memory |
|
Use Scenario: Temporary storage of OFDM symbol buffers and channel estimation results in LTE/5G baseband units. IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly with multi-core DSPs via HSTL buses running at 550 MHz. Use Value: 1.4–1.8 V VDDQ support enables seamless integration with mixed-voltage SoCs; ZQ calibration ensures consistent signal integrity across temperature. |
Use Scenario: Real-time waveform capture and pattern generation buffers in automated test equipment (ATE) platforms. IC Role / Device Role / Timing Role: High-reliability memory staging acquisition data before transfer to host processor over PCIe or AXI. Use Value: Full data coherency guarantees most current values during overlapping read/write bursts; JTAG support enables in-system verification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit (1M × 36), 1000 MHz interface, 1.5 V core, no ODT, PLCC-168 package | Lacks on-die termination and echo clocks; requires external termination and tighter timing closure | Preferred when board space permits larger PLCC and system lacks ZQ calibration infrastructure |
| ISSI IS61WV102432BLL-15BLI | 32-Mbit (1M × 32), 15 ns async access, 3.3 V only, SOJ-119 package | Asynchronous interface, no burst or DDR capability; lower bandwidth, higher latency | Suitable only for cost-sensitive, non-real-time buffering where 550 MHz timing is unnecessary |
Compared with IDT72T3615L10BG and IS61WV102432BLL-15BLI, CY7C25652KV18 provides double the density, deterministic 2.5-cycle latency, integrated ODT, and echo-clock–assisted timing - making it uniquely suited for next-generation packet-processing pipelines requiring sub-2-ns jitter tolerance.
Availability
CY7C25652KV18 is available at Aetrix Electronics and suitable for network line cards, switch fabric modules, telecom baseband units, and high-speed test equipment requiring stable component supply across extended production lifecycles.
Supply support for CY7C25652KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
CY7C25652KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write and precise timing alignment are mandatory.
FAQ
What is the function of the DOFF pin on CY7C25652KV18?
The DOFF (Data-Off) pin configures the device's read latency mode. When asserted HIGH, it enables QDR II+ operation with 2.5-cycle read latency and four-word burst. When LOW, it reverts to QDR I mode with 1-cycle latency and two-word burst. This pin is sampled at power-up and remains static during operation - it is not dynamically reconfigurable.
How does the ZQ pin affect output driver impedance?
The ZQ pin connects to an external precision resistor (RQ) to ground, calibrating the output driver impedance of Q[35:0], CQ, and CQ to exactly 0.2 × RQ. For example, a 200 Ω RQ sets output impedance to 40 Ω. Direct connection to VDDQ enables minimum impedance mode; connection to GND or floating is prohibited and may cause functional failure.
Can CY7C25652KV18 support depth expansion? If so, how?
Yes - depth expansion is achieved using RPS (Read Port Select) and WPS (Write Port Select) pins. Each device can be assigned unique RPS/WPS combinations to enable independent addressing across multiple chips. This allows stacking devices to increase total memory depth while maintaining full concurrency on each port, without requiring external address multiplexing logic.
Is the 165-ball FBGA package lead-free?
Yes - CY7C25652KV18 is offered in both Pb-free (RoHS-compliant) and non-Pb-free versions. The suffix "-ZI" in the part number (as in CY7C25652KV18-550BZXI) explicitly denotes the Pb-free, commercial temperature grade (–40 °C to +85 °C) variant in 165-ball FBGA packaging, with matte tin surface finish.
CY7C25652KV18-550BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25652KV18-550BZXI FAQ
1.How can I place an order for CY7C25652KV18-550BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25652KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25652KV18-550BZXI reliable?
The price and inventory of CY7C25652KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25652KV18-550BZXI is usually 5 days.
3.What payment methods are accepted for CY7C25652KV18-550BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25652KV18-550BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C25652KV18-550BZXI?
CY7C25652KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25652KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25652KV18-550BZXI?
For technical support, including CY7C25652KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25652KV18-550BZXI requirements.
6.How does Aetrix verify that CY7C25652KV18-550BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C25652KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25652KV18-550BZXI meets industry standards.
7.What is the process for return or replacement of CY7C25652KV18-550BZXI?
All CY7C25652KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25652KV18-550BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25652KV18-550BZXI part is unused and in its original packaging.
Return procedure for CY7C25652KV18-550BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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