Cypress Semiconductor Corp CY7C2565KV18-400BZC

Overview

CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 400 MHz (200 MHz clock, DDR → 400 MT/s effective), supports concurrent read/write via independent ports, and uses HSTL I/O with VDDQ = 1.4–1.8 V for high-speed networking buffer applications.

For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include burst depth (4-word), ODT support on D[35:0]/BWS[3:0]/K/K, echo clocks (CQ/CQ) for timing margin, QVLD signaling, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing constraints.

Technical Context

This SRAM implements true dual-port synchronous pipelined architecture: separate read and write data paths eliminate bus turnaround, enabling full-duplex operation. Address latching occurs on alternating rising edges of K and K clocks, supporting independent address access per port with shared A[18:0] bus (19-bit addressing for 512K depth).

The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) aligned to output data for simplified capture, and programmable DOFF pin to switch between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes - matching legacy QDR I timing when needed.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with AS7C3256B-15JCIN and IS61WV102432BLL-10BLI, CY7C2565KV18 delivers 2.25× higher density and deterministic 2.5-cycle latency with hardware-assisted signal integrity - essential for 400 MHz DDR packet buffering where timing closure and coherency are non-negotiable.

Availability

CY7C2565KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and test equipment pattern memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

CY7C2565KV18 belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic, high-bandwidth, concurrent-access memory subsystems in networking and telecom infrastructure.

FAQ

What is the function of the DOFF pin on CY7C2565KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency (QDR II+ mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This allows seamless integration into legacy systems or optimization for new high-throughput designs without changing PCB layout or firmware timing parameters.

How does On-Die Termination (ODT) work on CY7C2565KV18?

ODT is enabled via the ODT pin and applies calibrated 50 Ω termination to D[35:0], BWS[3:0], and K/K inputs. It uses an external ZQ resistor (240 Ω to GND) for impedance calibration, eliminating the need for 40+ discrete 50 Ω resistors. This reduces PCB layer count, improves signal integrity at 400 MHz, and simplifies layout for dense memory interfaces.

Can CY7C2565KV18 operate with VDDQ = 1.5 V?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal. At 1.5 V, HSTL Class I output drive strength is maintained, and AC timing parameters remain within spec per datasheet Table 23. This enables interoperability with 1.5 V FPGA I/O banks while retaining full 400 MHz DDR functionality and ODT calibration accuracy.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are source-synchronous echo clocks driven out with Q[35:0] data. They are phase-aligned to data edges and replicate the same skew characteristics, allowing receivers (e.g., FPGA I/O blocks) to use them directly for capture without complex deskew circuitry. This eliminates timing uncertainty in >400 MHz DDR interfaces and replaces manual delay tuning with deterministic, repeatable sampling windows.