Cypress Semiconductor Corp CY7C2565KV18-400BZI

Overview

CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 400 MHz (200 MHz clock frequency with DDR), delivers 1100 MT/s effective data rate on both read and write ports, and uses HSTL I/O with VDDQ = 1.4–1.8 V for high-speed networking buffer applications.

For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include its x36 bus width, FBGA-165 package, ODT support on D[35:0]/BWS[3:0]/K/K inputs, echo clocks (CQ/CQ), QVLD signaling, and PLL-based timing alignment for deterministic data capture in packet-switched infrastructure.

Technical Context

This device implements a true dual-port synchronous SRAM architecture with physically separate read and write data paths-no bus turnaround required. Its 4-word burst transfers 144 bits per access (36-bit × 4), latched on alternating rising edges of K and K clocks to sustain full bandwidth without address reissuance.

The integrated PLL synchronizes internal timing to external clocks, enabling precise placement of output data relative to CQ/CQ echo clocks. DOFF pin selects between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes, allowing compatibility with legacy QDR I systems while delivering higher throughput in optimized designs.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102436BLL-15BLI, CY7C2565KV18 delivers 5.5× higher effective bandwidth, eliminates external termination, and provides echo-clock–assisted data capture-critical for 10G+ infrastructure where timing margin is sub-nanosecond.

Availability

CY7C2565KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, telecom baseband processing, and ATE memory subsystems requiring stable component supply across extended production lifecycles.

Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C2565KV18 belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in packet-switched infrastructure where dual-port concurrency, burst efficiency, and signal integrity at >500 MHz are mandatory.

FAQ

What is the function of the DOFF pin on CY7C2565KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for maximum throughput in QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled synchronously on the K clock edge at power-up and can be changed dynamically during operation without reset.

How does On-Die Termination (ODT) work on CY7C2565KV18?

ODT is enabled internally for D[35:0], BWS[3:0], and K/K inputs using programmable impedance matching (typically 50 Ω). It eliminates the need for external series or parallel termination resistors, reducing PCB layer count, BOM cost, and signal reflection at 550 MHz clock rates. ODT state is controlled by internal logic and does not require external configuration pins.

Can CY7C2565KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes - the device supports VDDQ = 1.4 V to 1.8 V independently of core VDD = 1.8 V ± 0.1 V. At VDDQ = 1.5 V, HSTL Class I output drive strength is maintained, and input thresholds remain compatible with standard HSTL receivers. This allows interoperability with 1.5 V FPGA I/O banks while preserving 1.8 V core stability.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are differential, source-synchronous echo outputs of the K and K clocks, phase-aligned to outgoing read data Q[35:0]. They provide a clean, low-jitter timing reference at the receiver (e.g., FPGA) to capture data without relying on board-trace-matched clock/data routing - essential for reliable 1100 MT/s operation in dense, high-speed PCB layouts.