Cypress Semiconductor Corp CY7C2565KV18-450BZI
- Part No.:
- CY7C2565KV18-450BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2565KV18-450BZI.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 450 MHz (2.2 ns cycle time), supports DDR interfaces on independent read/write ports, and uses 1.8 V core / 1.4–1.8 V I/O supplies. It targets high-bandwidth packet buffering in network line cards and switch fabric controllers.
For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include burst depth (4-word), ODT support on D[35:0]/BWS[3:0]/K/K, echo clock (CQ/CQ) timing margining, QVLD data validity signaling, and FBGA-165 package compatibility with high-speed PCB layout constraints.
Technical Context
This device implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths-eliminating bus turnaround delays. It latches addresses on alternating rising edges of K and K clocks and delivers data on both rising edges of CQ and CQ echo clocks for precise DDR capture.
The internal 512K × 36 memory array is organized across four sub-arrays, enabling depth expansion via RPS/WPS port selects. A PLL synchronizes internal timing to achieve stable 2.5-cycle read latency when DOFF = HIGH, while supporting 1-cycle latency (QDR I mode) when DOFF = LOW.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 450 MHz - defines 2.2 ns minimum cycle time for full bandwidth operation |
| Read Latency | 2.5 clock cycles - enables deterministic timing for pipeline-aligned data retrieval |
| Data Interface | Double Data Rate (DDR) on both read and write ports - achieves 900 MT/s effective throughput |
| Supply Voltages | VDD = 1.8 V ± 0.1 V (core); VDDQ = 1.4 V to 1.8 V (I/O) - supports mixed-voltage system integration |
| On-Die Termination | ODT supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, reducing BOM count and routing complexity |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - optimized for thermal dissipation and high-density routing in telecom modules |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous data input | 36-bit wide write data bus sampled on rising edges of K/K; supports byte-level masking via BWS[3:0] |
| Q[35:0] | Synchronous data output | 36-bit wide read data bus driven on rising edges of CQ/CQ; valid window indicated by QVLD |
| A[18:0] | Multiplexed address input | 19-bit address bus shared by read/write ports; latched on alternating K/K edges for pipelined access |
| K / K | Differential input clocks | Primary timing references; rising edges control all synchronous inputs (no internal clock division) |
| CQ / CQ | Differential echo clocks | Output-synchronized copies of K/K; simplify high-speed data capture at receiver with matched trace lengths |
| DOFF | Latency mode control | High = 2.5-cycle QDR II+ mode; Low = 1-cycle QDR I compatibility mode |
| QVLD | Data validity indicator | Active-HIGH pulse aligned with first valid read word in burst - enables precise latch timing without fixed delay assumptions |
| BWS[3:0] | Byte write select | Four independent active-LOW signals controlling 8-bit segments of D[35:0]; enables partial writes without read-modify-write |
| RPS / WPS | Port select | Active-LOW enables read/write port independently - essential for depth expansion across multiple devices |
| ODT | On-die termination enable | Active-HIGH enables internal 50 Ω termination on D[35:0], BWS[3:0], and K/K pins - reduces stub reflections |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables true concurrent access - no arbitration overhead or bus contention in full-duplex traffic buffers |
| 4-word burst transfer | Reduces address bus toggling frequency by 4× versus single-word access - lowers EMI and simplifies controller logic |
| HSTL-compatible I/O | Meets JEDEC HSTL Class I specifications with programmable drive strength - ensures signal integrity up to 1100 MT/s |
| JTAG 1149.1 test access | Supports boundary scan testing of interconnects in dense FBGA layouts - critical for production test coverage |
| PLL-based timing alignment | Minimizes skew between internal data paths and echo clocks - guarantees setup/hold margins at 450 MHz operation |
Applications
| Network Packet Buffering | Switch Fabric Controller Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet line cards. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as dual-port buffer between MAC and switching ASIC. Use Value: 450 MHz clock + 4-word burst delivers 3.24 GB/s sustained bandwidth - matches wire-rate processing without backpressure. |
Use Scenario: Holding forwarding tables and queue state in modular chassis-based switches. IC Role / Device Role / Timing Role: QDR II+ SRAM providing simultaneous read (lookup) and write (update) access to shared context memory. Use Value: Independent ports eliminate arbitration stalls - maintains deterministic 2.5-cycle latency during concurrent table updates and lookups. |
| Telecom Baseband Processing | High-Speed Test Equipment Memory |
|
Use Scenario: Real-time buffering of IQ samples between FPGA-based DSP blocks in 5G NR baseband units. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing with HSTL-capable FPGA I/O banks for sample streaming. Use Value: ODT on all data and control lines eliminates external termination - saves 72 discrete resistors per device in multi-SRAM configurations. |
Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Synchronous SRAM serving as deep acquisition memory with precise echo-clock–aligned sampling. Use Value: CQ/CQ echo clocks provide deterministic 0 ps skew between data and strobe - enables reliable sampling at 1100 MT/s without phase tuning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256PFS-15JIN | 256K × 36 async SRAM, 15 ns access, single-port, no ODT or DDR | Limited to non-pipelined, lower-bandwidth control-plane storage | Select only if deterministic sub-15 ns latency is required and burst bandwidth is not critical |
| IS61WV102432BLL-10BLI | 1M × 32 sync SRAM, 10 ns cycle, single-port, LVCMOS I/O, no echo clocks | Suitable for simpler controller caches but lacks concurrent read/write capability | Choose when cost sensitivity outweighs need for QDR II+ features like ODT and burst efficiency |
Compared with AS7C3256PFS-15JIN and IS61WV102432BLL-10BLI, CY7C2565KV18 uniquely delivers concurrent dual-port operation, 4-word burst efficiency, and ODT - making it irreplaceable in full-duplex, high-frequency packet buffering where timing predictability and board-level signal integrity are mandatory.
Availability
CY7C2565KV18 is available at Aetrix Electronics and suitable for network line card design, telecom baseband modules, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.
Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
CY7C2565KV18 belongs to the QDR®II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where dual-port concurrency and sub-3-cycle latency are non-negotiable.
FAQ
What is the function of the DOFF pin on CY7C2565KV18?
The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle QDR II+ operation with maximum bandwidth; when LOW, it reverts to 1-cycle QDR I mode for backward compatibility. This pin is sampled synchronously on the K clock edge and must be held stable during initialization.
How does On-Die Termination (ODT) operate on CY7C2565KV18?
ODT is enabled by driving the dedicated ODT pin HIGH, activating 50 Ω termination resistors on D[35:0], BWS[3:0], and K/K inputs. Termination is disabled when ODT = LOW. This eliminates need for external 50 Ω resistors, reducing PCB area and improving impedance matching at 1100 MT/s data rates.
Can CY7C2565KV18 interface directly with Xilinx Virtex-6 FPGAs?
Yes - its HSTL Class I-compatible I/Os match Virtex-6 HP bank voltage ranges (1.35–1.5 V) and timing requirements. The CQ/CQ echo clocks align with FPGA IDELAY/ODELAY primitives, and the 165-ball FBGA footprint is supported in Xilinx reference designs for QDR II+ memory interfaces.
What is the purpose of the QVLD signal?
QVLD is an active-HIGH strobe synchronized to the first valid word of each 4-word read burst. It indicates exact timing of usable data on Q[35:0], allowing receivers to latch data without fixed delay assumptions - critical for maintaining timing margin at 450 MHz operation.
CY7C2565KV18-450BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2565KV18-450BZI FAQ
1.How can I place an order for CY7C2565KV18-450BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2565KV18-450BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2565KV18-450BZI reliable?
The price and inventory of CY7C2565KV18-450BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565KV18-450BZI is usually 5 days.
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Once your CY7C2565KV18-450BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2565KV18-450BZI?
For technical support, including CY7C2565KV18-450BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565KV18-450BZI requirements.
6.How does Aetrix verify that CY7C2565KV18-450BZI is sourced from the original manufacturer or authorized distributors?
All CY7C2565KV18-450BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565KV18-450BZI meets industry standards.
7.What is the process for return or replacement of CY7C2565KV18-450BZI?
All CY7C2565KV18-450BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565KV18-450BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2565KV18-450BZI part is unused and in its original packaging.
Return procedure for CY7C2565KV18-450BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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