Cypress Semiconductor Corp CY7C2565KV18-450BZXC
- Part No.:
- CY7C2565KV18-450BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2565KV18-450BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 450 MHz (2.2 ns cycle time), supports DDR interfaces on separate read/write ports, and uses 1.8 V core / 1.4–1.8 V I/O supplies in a 165-ball FBGA package. It is used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include burst depth, ODT support on D[35:0]/BWS[3:0]/K/K inputs, echo clock (CQ/CQ) timing margin, QVLD data validity signaling, and compatibility with HSTL-18/15 I/O standards in multi-port memory subsystems.
Technical Context
This device implements a synchronous pipelined QDR II+ architecture with fully independent read and write ports sharing a multiplexed address bus. Read and write operations are latched on alternate rising edges of the K clock, enabling concurrent access without bus turnaround.
It integrates a PLL for precise data placement, echo clocks (CQ/CQ) for source-synchronous capture, and programmable ODT on data, byte-write select, and clock inputs. The DOFF pin selects between 2.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, maintaining functional alignment with legacy QDR I systems when needed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s per port via DDR interface |
| Read Latency | 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline scheduling |
| VDD / VDDQ | Core: 1.8 V ±0.1 V; I/O: 1.4–1.8 V - supports both HSTL-15 and HSTL-18 signaling |
| Burst Length | 4-word burst - reduces address bus toggling frequency by 4× vs. single-word access |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, saves PCB area |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory devices |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edge of K/K; ODT enabled |
| Q[35:0] | Synchronous read data output | 36-bit DDR output registered to K/K; valid indicated by QVLD |
| A[18:0] | Multiplexed address input | 19-bit address latched on K rising edge for both read/write ports |
| K / K | Differential clock inputs | Rising-edge-triggered; K used for address/control, K for data; ODT enabled |
| CQ / CQ | Echo clocks | Source-synchronous output clocks aligned to Q[35:0] for reliable high-speed capture |
| QVLD | Data validity indicator | Active-HIGH pulse synchronized to first valid word of 4-word burst |
| BWS[3:0] | Byte write select | Four independent active-LOW signals controlling 8-bit byte writes; ODT enabled |
| WPS | Write port select | Active-LOW signal enabling write transactions; sampled on K rising edge |
| RPS | Read port select | Active-LOW signal enabling read transactions; sampled on K rising edge |
| DOFF | Latency mode control | HIGH → 2.5-cycle read latency; LOW → 1-cycle read latency (QDR I compatibility) |
| VDDQ / VDD | Power supplies | VDDQ (1.4–1.8 V) powers I/O buffers; VDD (1.8 V ±0.1 V) powers core logic |
| ZQ | Impedance calibration reference | Connect to 240 Ω ±1 % resistor to ground for ODT and driver strength calibration |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read and write operations without arbitration delay or bus contention |
| 4-word DDR burst | Delivers 144 bits per access cycle (36 × 4), reducing effective address rate by factor of 4 |
| Programmable ODT | Configurable 50 Ω termination on D[35:0], BWS[3:0], and K/K - eliminates 72 external resistors |
| Echo clock (CQ/CQ) | Output-aligned clock simplifies PCB layout and relaxes setup/hold timing at receiver |
| QVLD strobe | Explicit indication of first valid data word in burst - removes need for fixed-latency assumptions |
| JTAG 1149.1 support | Enables boundary scan testing and in-system diagnostics without additional test points |
Applications
| High-Speed Network Switch Buffering | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switching ASICs operating at 10 Gbps+ line rates. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, with independent read/write timing. Use Value: 450 MHz DDR operation delivers 32.4 GB/s aggregate bandwidth (16.2 GB/s per port), meeting backplane interconnect throughput requirements. | Use Scenario: Temporary storage of voice-over-IP (VoIP) packets and control-plane messages in carrier-grade DSLAMs and OLTs. IC Role / Device Role / Timing Role: QDR II+ SRAM serving as low-latency, deterministic-access memory for real-time traffic shaping and jitter buffering. Use Value: 2.5-cycle read latency ensures predictable response within 5.5 ns, critical for sub-100 µs jitter compensation windows. |
| Multi-Core Processor Cache Coherency Directory | High-Frequency Trading (HFT) FPGA Lookup Table |
Use Scenario: Maintaining cache coherency metadata across 8+ CPU cores in embedded multicore SoCs for defense/aerospace avionics. IC Role / Device Role / Timing Role: Shared directory memory accessed simultaneously by multiple snoop controllers using independent read/write ports. Use Value: Full data coherency guarantee and port-select isolation prevent stale metadata reads during concurrent updates. | Use Scenario: Storing ultra-low-latency market data lookup tables (e.g., order book snapshots, symbol mappings) in FPGA-accelerated trading engines. IC Role / Device Role / Timing Role: Deterministic-access memory providing sub-6 ns read access to price-level data for algorithmic decision pipelines. Use Value: DOFF-controlled latency mode allows runtime switching between 2.5-cycle (high accuracy) and 1-cycle (ultra-low latency) modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150 | 36-bit QDR II+ at 550 MHz; same 165-ball FBGA but requires 1.5 V VDDQ only | Lacks DOFF pin - fixed 2.5-cycle latency; no 1-cycle fallback mode | Select when maximum bandwidth (550 MHz) is required and latency flexibility is unnecessary |
| ISSI IS61WV102436B | 1024K × 36 sync SRAM with single port and 10 ns async access; no DDR or ODT | No concurrent read/write; no echo clocks or QVLD; lower bandwidth (~1.8 GB/s) | Select only for cost-sensitive, non-concurrent, lower-speed buffering where QDR features are unused |
Compared with IDT72T36150 and IS61WV102436B, CY7C2565KV18 uniquely offers runtime latency reconfiguration (via DOFF), integrated ODT for signal integrity at 450 MHz, and echo clocks for simplified timing closure-making it optimal for adaptive, high-reliability networking designs.
Availability
CY7C2565KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffering, telecom line card packet memory, multi-core processor cache coherency directories, and high-frequency trading FPGA lookup tables requiring stable component supply across extended production lifecycles.
Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C2565KV18 belongs to Cypress's QDR®II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-processing and real-time control systems.
FAQ
What is the function of the DOFF pin on CY7C2565KV18?
The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with QDR I timing. This allows system-level optimization between bandwidth efficiency and absolute latency minimization without hardware change.
How does On-Die Termination (ODT) work on CY7C2565KV18?
ODT provides programmable 50 Ω termination on D[35:0], BWS[3:0], and K/K inputs, calibrated via the ZQ pin connected to a 240 Ω resistor. It eliminates the need for 76 external termination resistors, reduces PCB layer count, improves signal integrity at 450 MHz, and simplifies routing of high-speed buses in dense switch fabric designs.
Can CY7C2565KV18 operate with 1.5 V I/O voltage?
Yes - its VDDQ range is specified from 1.4 V to 1.8 V, fully supporting HSTL-15 (1.5 V) operation. This enables interoperability with legacy 1.5 V FPGAs and ASICs while retaining full 450 MHz performance and ODT functionality, unlike many competing QDR II+ parts limited to 1.8 V only.
What is the role of CQ and CQ echo clocks?
CQ and CQ are source-synchronous output clocks driven with the same phase and skew as Q[35:0] data. They enable the receiving device (e.g., FPGA) to latch data with relaxed setup/hold margins, eliminating the need for complex deskew circuitry or dynamic phase alignment - critical for reliable 900 MT/s DDR capture in production systems.
CY7C2565KV18-450BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2565KV18-450BZXC FAQ
1.How can I place an order for CY7C2565KV18-450BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2565KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2565KV18-450BZXC reliable?
The price and inventory of CY7C2565KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565KV18-450BZXC is usually 5 days.
3.What payment methods are accepted for CY7C2565KV18-450BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2565KV18-450BZXC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C2565KV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2565KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2565KV18-450BZXC?
For technical support, including CY7C2565KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565KV18-450BZXC requirements.
6.How does Aetrix verify that CY7C2565KV18-450BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2565KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565KV18-450BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2565KV18-450BZXC?
All CY7C2565KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565KV18-450BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2565KV18-450BZXC part is unused and in its original packaging.
Return procedure for CY7C2565KV18-450BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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