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Cypress Semiconductor Corp CY7C2565KV18-450BZXC

Part No.:
CY7C2565KV18-450BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2565KV18-450BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,338

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Product details

Overview

CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 450 MHz (2.2 ns cycle time), supports DDR interfaces on separate read/write ports, and uses 1.8 V core / 1.4–1.8 V I/O supplies in a 165-ball FBGA package. It is used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include burst depth, ODT support on D[35:0]/BWS[3:0]/K/K inputs, echo clock (CQ/CQ) timing margin, QVLD data validity signaling, and compatibility with HSTL-18/15 I/O standards in multi-port memory subsystems.

Technical Context

This device implements a synchronous pipelined QDR II+ architecture with fully independent read and write ports sharing a multiplexed address bus. Read and write operations are latched on alternate rising edges of the K clock, enabling concurrent access without bus turnaround.

It integrates a PLL for precise data placement, echo clocks (CQ/CQ) for source-synchronous capture, and programmable ODT on data, byte-write select, and clock inputs. The DOFF pin selects between 2.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, maintaining functional alignment with legacy QDR I systems when needed.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36 configuration)
Max Clock Frequency450 MHz - enables 900 MT/s per port via DDR interface
Read Latency2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline scheduling
VDD / VDDQCore: 1.8 V ±0.1 V; I/O: 1.4–1.8 V - supports both HSTL-15 and HSTL-18 signaling
Burst Length4-word burst - reduces address bus toggling frequency by 4× vs. single-word access
On-Die TerminationSupported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, saves PCB area
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory devices

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data input36-bit parallel data sampled on rising edge of K/K; ODT enabled
Q[35:0]Synchronous read data output36-bit DDR output registered to K/K; valid indicated by QVLD
A[18:0]Multiplexed address input19-bit address latched on K rising edge for both read/write ports
K / KDifferential clock inputsRising-edge-triggered; K used for address/control, K for data; ODT enabled
CQ / CQEcho clocksSource-synchronous output clocks aligned to Q[35:0] for reliable high-speed capture
QVLDData validity indicatorActive-HIGH pulse synchronized to first valid word of 4-word burst
BWS[3:0]Byte write selectFour independent active-LOW signals controlling 8-bit byte writes; ODT enabled
WPSWrite port selectActive-LOW signal enabling write transactions; sampled on K rising edge
RPSRead port selectActive-LOW signal enabling read transactions; sampled on K rising edge
DOFFLatency mode controlHIGH → 2.5-cycle read latency; LOW → 1-cycle read latency (QDR I compatibility)
VDDQ / VDDPower suppliesVDDQ (1.4–1.8 V) powers I/O buffers; VDD (1.8 V ±0.1 V) powers core logic
ZQImpedance calibration referenceConnect to 240 Ω ±1 % resistor to ground for ODT and driver strength calibration

Key Features

FeatureDesign Value
Separate read/write portsEnables true concurrent read and write operations without arbitration delay or bus contention
4-word DDR burstDelivers 144 bits per access cycle (36 × 4), reducing effective address rate by factor of 4
Programmable ODTConfigurable 50 Ω termination on D[35:0], BWS[3:0], and K/K - eliminates 72 external resistors
Echo clock (CQ/CQ)Output-aligned clock simplifies PCB layout and relaxes setup/hold timing at receiver
QVLD strobeExplicit indication of first valid data word in burst - removes need for fixed-latency assumptions
JTAG 1149.1 supportEnables boundary scan testing and in-system diagnostics without additional test points

Applications

High-Speed Network Switch BufferingTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switching ASICs operating at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, with independent read/write timing.

Use Value: 450 MHz DDR operation delivers 32.4 GB/s aggregate bandwidth (16.2 GB/s per port), meeting backplane interconnect throughput requirements.

Use Scenario: Temporary storage of voice-over-IP (VoIP) packets and control-plane messages in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: QDR II+ SRAM serving as low-latency, deterministic-access memory for real-time traffic shaping and jitter buffering.

Use Value: 2.5-cycle read latency ensures predictable response within 5.5 ns, critical for sub-100 µs jitter compensation windows.

Multi-Core Processor Cache Coherency DirectoryHigh-Frequency Trading (HFT) FPGA Lookup Table

Use Scenario: Maintaining cache coherency metadata across 8+ CPU cores in embedded multicore SoCs for defense/aerospace avionics.

IC Role / Device Role / Timing Role: Shared directory memory accessed simultaneously by multiple snoop controllers using independent read/write ports.

Use Value: Full data coherency guarantee and port-select isolation prevent stale metadata reads during concurrent updates.

Use Scenario: Storing ultra-low-latency market data lookup tables (e.g., order book snapshots, symbol mappings) in FPGA-accelerated trading engines.

IC Role / Device Role / Timing Role: Deterministic-access memory providing sub-6 ns read access to price-level data for algorithmic decision pipelines.

Use Value: DOFF-controlled latency mode allows runtime switching between 2.5-cycle (high accuracy) and 1-cycle (ultra-low latency) modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615036-bit QDR II+ at 550 MHz; same 165-ball FBGA but requires 1.5 V VDDQ onlyLacks DOFF pin - fixed 2.5-cycle latency; no 1-cycle fallback modeSelect when maximum bandwidth (550 MHz) is required and latency flexibility is unnecessary
ISSI IS61WV102436B1024K × 36 sync SRAM with single port and 10 ns async access; no DDR or ODTNo concurrent read/write; no echo clocks or QVLD; lower bandwidth (~1.8 GB/s)Select only for cost-sensitive, non-concurrent, lower-speed buffering where QDR features are unused

Compared with IDT72T36150 and IS61WV102436B, CY7C2565KV18 uniquely offers runtime latency reconfiguration (via DOFF), integrated ODT for signal integrity at 450 MHz, and echo clocks for simplified timing closure-making it optimal for adaptive, high-reliability networking designs.

Availability

CY7C2565KV18 is available at Aetrix Electronics and suitable for high-speed network switch buffering, telecom line card packet memory, multi-core processor cache coherency directories, and high-frequency trading FPGA lookup tables requiring stable component supply across extended production lifecycles.

Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2565KV18 belongs to Cypress's QDR®II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-processing and real-time control systems.

FAQ

What is the function of the DOFF pin on CY7C2565KV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with QDR I timing. This allows system-level optimization between bandwidth efficiency and absolute latency minimization without hardware change.

How does On-Die Termination (ODT) work on CY7C2565KV18?

ODT provides programmable 50 Ω termination on D[35:0], BWS[3:0], and K/K inputs, calibrated via the ZQ pin connected to a 240 Ω resistor. It eliminates the need for 76 external termination resistors, reduces PCB layer count, improves signal integrity at 450 MHz, and simplifies routing of high-speed buses in dense switch fabric designs.

Can CY7C2565KV18 operate with 1.5 V I/O voltage?

Yes - its VDDQ range is specified from 1.4 V to 1.8 V, fully supporting HSTL-15 (1.5 V) operation. This enables interoperability with legacy 1.5 V FPGAs and ASICs while retaining full 450 MHz performance and ODT functionality, unlike many competing QDR II+ parts limited to 1.8 V only.

What is the role of CQ and CQ echo clocks?

CQ and CQ are source-synchronous output clocks driven with the same phase and skew as Q[35:0] data. They enable the receiving device (e.g., FPGA) to latch data with relaxed setup/hold margins, eliminating the need for complex deskew circuitry or dynamic phase alignment - critical for reliable 900 MT/s DDR capture in production systems.

CY7C2565KV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2565KV18-450BZXC FAQ

1.How can I place an order for CY7C2565KV18-450BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2565KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2565KV18-450BZXC reliable?

The price and inventory of CY7C2565KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565KV18-450BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2565KV18-450BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2565KV18-450BZXC transactions.

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4.How is shipping managed for CY7C2565KV18-450BZXC?

CY7C2565KV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2565KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2565KV18-450BZXC?

For technical support, including CY7C2565KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565KV18-450BZXC requirements.

6.How does Aetrix verify that CY7C2565KV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2565KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565KV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2565KV18-450BZXC?

All CY7C2565KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565KV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2565KV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C2565KV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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