Cypress Semiconductor Corp CY7C2565KV18-500BZXC
- Part No.:
- CY7C2565KV18-500BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2565KV18-500BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2565KV18 from Cypress Semiconductor is a 72-Mbit QDR®II+ SRAM with 2M × 36 organization, 500 MHz clock frequency, 2.5-cycle read latency, on-die termination (ODT), and DDR interfaces on independent read/write ports-designed for high-bandwidth packet buffering in network line cards and telecom switching fabric.
For engineers reviewing the CY7C2565KV18 datasheet, CY7C2565KV18 pinout, CY7C2565KV18 application, or CY7C2565KV18 equivalent, key selection criteria include burst depth (4-word), I/O voltage support (1.4V–1.8V), HSTL-compatible interfaces, FBGA-165 package compatibility, and DOFF-controlled latency mode switching between 1-cycle and 2.5-cycle operation.
Technical Context
This device implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround overhead. It uses dual input clocks (K/K) sampled only on rising edges and echo clocks (CQ/CQ) to align data capture at 1100 MT/s effective rate.
The internal memory array is partitioned into four 512K × 36 sub-arrays, accessed via a shared 19-bit multiplexed address bus latched on alternating K-clock edges. Write operations are self-timed and fully synchronous, while QVLD provides cycle-accurate output validity indication for reliable high-speed latch timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (2M × 36 configuration) |
| Max Clock Frequency | 500 MHz - enables 1100 MT/s DDR data transfer on both ports |
| Read Latency | 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable real-time latency mode |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5V and 1.8V system rails |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external 50Ω resistors, reduces PCB routing complexity |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - standard footprint for high-pin-count memory modules |
| Core Supply | VDD = 1.8 V ± 0.1 V - tightly regulated core rail required for stable QDR II+ timing margins |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel data sampled on rising edge of K/K; supports full-width or byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | 36-bit DDR output bus with echo-clocked alignment; QVLD indicates valid window |
| A[18:0] | Multiplexed address inputs | 19-bit address latched on alternating K-clock edges for 2M-depth addressing |
| BWS[3:0] | Byte write select inputs | Active-low signals controlling which 8-bit bytes are updated during write (BWS0→D[8:0], BWS3→D[35:27]) |
| K / K | Dual input clocks | Rising-edge-triggered clocks for all synchronous inputs; K used for address/WPS, K for data/BWS |
| CQ / CQ | Echo clocks | Output-aligned copies of K/K for simplified source-synchronous capture at receiver |
| DOFF | Latency mode control | High = 2.5-cycle read latency; Low = 1-cycle latency (QDR I–compatible mode) |
| QVLD | Data validity indicator | Asserted one cycle before first valid Q[35:0] word, synchronized to CQ edge |
| ODT | On-die termination enable | Activates internal 50Ω termination on D[35:0], BWS[3:0], and K/K inputs when asserted |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables true concurrent access-no arbitration delay or bus contention in full-duplex traffic buffers |
| 4-word burst architecture | Reduces address bus toggling by 75% vs. single-word access; improves signal integrity and routing density |
| HSTL Class I I/O buffers | Guarantees timing closure at 500 MHz with controlled slew and impedance-matched drive |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant test access for production board-level validation without physical probe points |
| Depth expansion support | RPS/WPS port selects allow stacking multiple devices for wider or deeper memory configurations |
Applications
| Packet Buffering in 10G/40G Line Cards | Switch Fabric Memory in Modular Routers |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-protocol line interface cards operating at OC-192/STM-64 rates. IC Role / Device Role / Timing Role: Dual-port SRAM acting as central buffer with simultaneous read (forwarding decision) and write (packet arrival) operations. Use Value: 2.5-cycle latency + 4-word burst delivers 1100 MT/s sustained bandwidth per port-matching SerDes link throughput without pipeline stalls. | Use Scenario: Interconnecting multiple ASICs in a distributed switch fabric where crossbar arbitration requires low-latency, deterministic memory access. IC Role / Device Role / Timing Role: Shared memory resource accessed concurrently by ingress and egress scheduler engines using separate ports. Use Value: Independent RPS/WPS controls eliminate arbitration logic; ODT removes 72 external terminators-reducing BOM cost and layer count in dense backplane designs. |
| Baseband Processing in LTE eNodeB | Real-Time Video Frame Buffering |
Use Scenario: Temporary storage of IQ samples and FFT outputs across multiple OFDM symbol processing stages in wireless baseband units. IC Role / Device Role / Timing Role: High-throughput scratchpad memory supporting parallel MAC/PHY layer pipelines with strict jitter tolerance. Use Value: Echo clocks (CQ/CQ) and QVLD enable sub-1ns setup/hold margin at 500 MHz-critical for deterministic symbol timing in TDD-LTE systems. | Use Scenario: Intermediate frame storage between video encoder and transport stream multiplexer in broadcast-grade 4K encoding systems. IC Role / Device Role / Timing Role: Dual-port buffer absorbing variable-rate encode output and feeding constant-bitrate TS mux at precise intervals. Use Value: 36-bit wide interface matches common YUV422 10-bit pixel packing; 1.4–1.8V VDDQ allows direct interfacing with FPGA I/O banks without level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10PF | 36-bit QDR II, 1000 Mbps, no ODT, 1.8V-only VDDQ, 165-BGA but different pinout | Lacks on-die termination and flexible VDDQ range; requires external termination network | Choose when legacy design reuse is prioritized over BOM simplification and power optimization |
| ISSI IS61WV102436B | 1024K × 36 sync SRAM, 166 MHz max, single-port, no DDR, no ODT, SOJ package | Lower bandwidth, no concurrent access, no echo clocks-suitable only for non-real-time buffering | Choose only for cost-sensitive, low-speed control-plane memory where latency and throughput are secondary |
Compared with IDT72T3615L10PF and IS61WV102436B, CY7C2565KV18 uniquely combines 500 MHz DDR operation, programmable 1/2.5-cycle latency, integrated ODT, and 1.4–1.8V I/O flexibility-making it the only option capable of sustaining 1100 MT/s full-duplex traffic in space-constrained telecom hardware.
Availability
CY7C2565KV18 is available at Aetrix Electronics and suitable for packet buffering in 10G/40G line cards, switch fabric memory in modular routers, and baseband processing in LTE eNodeB requiring stable component supply across long-life telecom deployments.
Supply support for CY7C2565KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C2565KV18 belongs to Cypress's QDR®II+ SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in high-speed networking and signal processing infrastructure.
FAQ
What is the function of the DOFF pin on CY7C2565KV18?
The DOFF (Delay OFF) pin configures read latency mode: when driven HIGH, it enables 2.5-cycle read latency for optimal QDR II+ performance; when driven LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This is a static configuration pin sampled at initialization and must remain stable during operation.
How does On-Die Termination (ODT) work on CY7C2565KV18?
ODT activates internal 50Ω termination resistors on D[35:0], BWS[3:0], and K/K inputs when the ODT pin is asserted. It eliminates need for 72 discrete 50Ω resistors, reduces PCB area by ~120 mm², and improves signal integrity by matching transmission line impedance directly at the die bond pads.
Can CY7C2565KV18 operate with VDDQ = 1.5V?
Yes-CY7C2565KV18 supports VDDQ from 1.4V to 1.8V, including 1.5V. This allows direct interfacing with 1.5V FPGA I/O banks (e.g., Xilinx Virtex-6 HP banks) without level shifters, while maintaining full 500 MHz operation and HSTL Class I compliance per JEDEC JESD8-12.
What is the purpose of CQ and CQ echo clocks?
CQ and CQ are source-synchronous echo copies of K and K clocks, routed alongside Q[35:0] outputs. They provide precise timing references at the receiver to capture DDR data with minimal skew-enabling reliable 1100 MT/s operation without complex PLL-based deskew circuitry in the controller.
CY7C2565KV18-500BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 500 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2565KV18-500BZXC FAQ
1.How can I place an order for CY7C2565KV18-500BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2565KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2565KV18-500BZXC reliable?
The price and inventory of CY7C2565KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565KV18-500BZXC is usually 5 days.
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Once your CY7C2565KV18-500BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2565KV18-500BZXC?
For technical support, including CY7C2565KV18-500BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565KV18-500BZXC requirements.
6.How does Aetrix verify that CY7C2565KV18-500BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2565KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565KV18-500BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2565KV18-500BZXC?
All CY7C2565KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565KV18-500BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2565KV18-500BZXC part is unused and in its original packaging.
Return procedure for CY7C2565KV18-500BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C2565KV18-500BZXC Tags

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