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Cypress Semiconductor Corp CY7C2565XV18-600BZXC

Part No.:
CY7C2565XV18-600BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2565XV18-600BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:248

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Product details

Overview

CY7C2565XV18-600BZXC from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with four-word burst architecture, 2.5-cycle read latency (DOFF = HIGH), 600 MHz clock operation, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards and telecom switching fabric.

For engineers reviewing the CY7C2565XV18-600BZXC datasheet, CY7C2565XV18-600BZXC pinout, CY7C2565XV18-600BZXC application, or CY7C2565XV18-600BZXC equivalent, key selection criteria include DDR read/write ports at 1200 Mbps effective data rate, HSTL I/O compatibility, 1.8 V core / 1.5 V I/O supply support, and 165-ball FBGA (13 × 15 × 1.4 mm) package constraints.

Technical Context

This SRAM implements true dual-port synchronous pipelined architecture with physically separate read and write data paths-enabling concurrent read and write transactions without bus turnaround. It uses two independent input clocks (K and K) for precise DDR timing control, with all synchronous inputs latched on rising edges and outputs edge-aligned to echo clocks CQ/CQ.

The device integrates a phase-locked loop (PLL) for accurate data placement, supports programmable ODT impedance selection via ODT and ZQ pins, and provides QVLD as a dedicated valid-data indicator synchronized to echo clocks-critical for reliable capture in 600 MHz systems with tight setup/hold margins.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 600 MHz - enables 1200 MT/s effective throughput per port
Read Latency 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline synchronization
Core Supply 1.8 V ± 0.1 V - low-power operation compatible with advanced SoC voltage domains
I/O Supply Range 1.4 V to 1.6 V - supports 1.5 V HSTL-18 I/O standard with variable drive strength
Package 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-pin-count memory
On-Die Termination Supported on D[35:0], BWS[3:0], K/K - eliminates external resistors and reduces PCB routing complexity

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Latched on rising edges of K/K; full 36-bit parallel write path
Q[35:0] Synchronous read data outputs DDR output driven on K/K rising edges; tristated when RPS deasserted
RPS Read port select (active LOW) Enables read burst; sampled on K rising edge; controls Q[35:0] driver state
WPS Write port select (active LOW) Initiates write burst; sampled on K rising edge; gates D[35:0] acceptance
BWS[3:0] Byte write selects (active LOW) Independent 9-bit byte masking: BWS0–BWS3 control D[8:0] through D[35:27]
K / K Differential input clocks Rising-edge-triggered timing reference for all synchronous I/O; no internal inversion
CQ / CQ DDR echo clocks Free-running, K/K-synchronized clocks for source-synchronous data capture
QVLD Valid data indicator Edge-aligned with CQ/CQ; signals Q[35:0] validity during read bursts
ODT On-die termination control Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); default HIGH if floating
ZQ Impedance calibration reference Connected to precision external resistor (175–250 Ω) for ODT resistance tuning
DOFF Latency mode select HIGH → QDR II+ mode (2.5-cycle read latency); LOW → QDR I mode (1-cycle latency)
VDD / VDDQ / VSS Power and ground terminals VDD = 1.8 V core; VDDQ = 1.5 V I/O; multiple VSS balls ensure low-impedance return paths

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus frequency by 4× versus single-word access-minimizing routing layers and timing closure effort
Separate read/write ports with DDR I/O Eliminates data bus turnaround delays and contention, enabling true concurrent read-write at full bandwidth
Programmable on-die termination (ODT) Removes need for 72 discrete 35–50 Ω external termination resistors-cutting BOM cost and PCB area by >25 mm²
QVLD + echo clocks (CQ/CQ) Provides deterministic, source-synchronous data valid signaling-reducing receiver timing margin requirements by ≥150 ps
DOFF-configurable latency mode Supports migration from legacy QDR I designs (1-cycle) while enabling higher-performance QDR II+ (2.5-cycle) operation

Applications

Network Packet Buffering Telecom Switch Fabric

Use Scenario: Line-rate buffering of 10G/40G Ethernet frames in ingress/egress queues of carrier-grade routers.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with concurrent read (dequeue) and write (enqueue) access.

Use Value: 1200 MT/s DDR throughput per port sustains full 40G line rate with <10 ns read-to-write turnaround-no arbitration logic required.

Use Scenario: Cell/packet memory in ATM or MPLS switching fabric where deterministic latency is critical for QoS compliance.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as crossbar switch lookup and payload store with strict jitter-controlled timing.

Use Value: 2.5-cycle fixed read latency and echo-clock–synchronized QVLD enable sub-200 ps jitter budget adherence in SERDES-adjacent layouts.

High-Speed Test Equipment Avionics Data Recorders

Use Scenario: Real-time waveform capture and pattern generation in automated test equipment requiring deep, fast memory buffers.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory interfaced directly to FPGA logic with minimal glue logic.

Use Value: Four-word burst reduces FPGA address counter complexity and allows 600 MHz clock domain to sustain >2 Gbps sustained write throughput.

Use Scenario: Fault-tolerant flight data recording where radiation-hardened timing predictability and power stability are mandated.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM buffer for ARINC 429/664 data streams with guaranteed 1.8 V core operation.

Use Value: Neutron soft error immunity (documented in datasheet) combined with 1.8 V core supply meets DO-254 Level A deterministic reliability requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36130L10BG 36-Mbit (1M × 36), 1000 MHz max clock, 1.5 V core, no ODT, LVDS I/O Higher speed but lower density; requires external termination and level-shifting for 1.5 V systems Preferred when >1 Gbps throughput is needed and board space allows LVDS routing and termination components
ISSI IS61WV102436BLL-15BLI 36-Mbit (1M × 36), 150 MHz async interface, 3.3 V only, no burst or DDR Asynchronous, single-port, lower bandwidth-suitable only for non-real-time buffering Only viable for cost-sensitive, low-speed control-plane memory where QDR timing is not required

Compared with IDT72T36130L10BG and IS61WV102436BLL-15BLI, CY7C2565XV18-600BZXC delivers 2× density at 600 MHz with integrated ODT and echo-clock timing-reducing system-level timing validation effort and eliminating 72 external terminators required by the IDT part.

Availability

CY7C2565XV18-600BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, and high-speed test equipment requiring stable component supply, long-lifecycle availability, and Pb-free compliance.

Supply support for CY7C2565XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2565XV18 belongs to the QDR® II+ Xtreme SRAM product line-engineered specifically for deterministic, high-throughput memory subsystems in networking infrastructure where concurrent access, low latency, and signal integrity are non-negotiable.

FAQ

What is the function of the DOFF pin on CY7C2565XV18-600BZXC?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency; when LOW, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and remains static during operation-enabling hardware-selectable timing behavior without firmware intervention.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. When ODT is active, it applies programmable termination (RQ/3.33 or RQ/1.66) to D[35:0], BWS[3:0], and K/K inputs-eliminating the need for 72 discrete 35–50 Ω surface-mount resistors and reducing PCB layer count and signal reflection.

Can CY7C2565XV18-600BZXC be used with a 1.35 V I/O supply?

No. The device specifies I/O supply range as 1.4 V to 1.6 V (VDDQ), with 1.5 V as the nominal target. Operation below 1.4 V violates DC electrical specifications-including setup/hold timing, output drive strength, and ODT accuracy-and is not characterized or guaranteed by Cypress.

What is the role of CQ and CQ echo clocks?

CQ and CQ are free-running, K/K-synchronized output clocks that mirror the input clock phase with minimal skew. They provide source-synchronous timing references for capturing Q[35:0] data, allowing receivers to align sampling windows precisely-critical for reliable operation at 600 MHz with tight 250 ps setup/hold windows.

CY7C2565XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2565XV18-600BZXC FAQ

1.How can I place an order for CY7C2565XV18-600BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2565XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2565XV18-600BZXC reliable?

The price and inventory of CY7C2565XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565XV18-600BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2565XV18-600BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2565XV18-600BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2565XV18-600BZXC?

CY7C2565XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2565XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2565XV18-600BZXC?

For technical support, including CY7C2565XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C2565XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2565XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2565XV18-600BZXC?

All CY7C2565XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2565XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C2565XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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