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Cypress Semiconductor Corp CY7C2565XV18-633BZC

Part No.:
CY7C2565XV18-633BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2565XV18-633BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Product details

Overview

CY7C2565XV18 from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with four-word burst architecture, 2.5-cycle read latency (DOFF = HIGH), 633 MHz clock operation, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs-designed for high-bandwidth packet buffering in network line cards and telecom switching fabric.

For engineers reviewing the CY7C2565XV18 datasheet, CY7C2565XV18 pinout, CY7C2565XV18 application, or CY7C2565XV18 equivalent, key selection criteria include DDR read/write ports, echo clocks (CQ/CQ) for timing margin, QVLD data validity signaling, HSTL I/O compatibility, and 165-ball FBGA (13 × 15 × 1.4 mm) package constraints.

Technical Context

The CY7C2565XV18 implements a synchronous pipelined QDR II+ architecture with physically separate read and write ports, enabling true concurrent read/write transactions without bus turnaround. It uses dual input clocks (K and K) sampled only on rising edges, with echo clocks (CQ/CQ) phase-aligned to simplify high-speed data capture at 1266 MT/s.

Internal depth expansion is supported via independent RPS/WPS controls and four byte-write select inputs (BWS[3:0]), each gating 9-bit segments of the 36-bit data bus. The device integrates a PLL for precise data placement and supports programmable ODT impedance ranges (RQ/1.66 or RQ/3.33) selected by the ODT pin during power-up initialization.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 633 MHz - enables 1266 MT/s DDR throughput per port
Read Latency 2.5 cycles (DOFF = HIGH) - balances bandwidth and timing margin in burst-heavy systems
I/O Voltage VDDQ = 1.4–1.6 V - compatible with 1.5 V HSTL-18 interfaces
Core Voltage VDD = 1.8 V ± 0.1 V - low-power operation with tight regulation requirement
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory modules
On-Die Termination Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors, reducing PCB area and signal integrity risk

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs 36-bit parallel data bus sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data outputs 36-bit parallel output bus driven on rising edges of K/K; tristated when RPS is deasserted
RPS / WPS Read/Write port select (active LOW) Independent enable signals-allows concurrent access control without shared arbitration logic
BWS[3:0] Byte write select inputs (active LOW) Four 9-bit segment enables; BWS0–BWS3 map to D[8:0], D[17:9], D[26:18], D[35:27] respectively
K / K Dual-phase input clocks Rising-edge-triggered only; K drives write-side sampling, K drives read-side sampling and output timing
CQ / CQ Echo clocks (output) Free-running, phase-aligned copies of K/K-used by system controller to latch Q[35:0] with deterministic setup/hold
QVLD Valid data indicator Asserted synchronously with CQ/CQ edges to mark valid Q[35:0] data-enables reliable DDR capture without fixed delay assumptions
ODT On-die termination select Configures ODT resistance range at power-up: LOW → RQ/3.33 (~175–350 Ω), HIGH/floating → RQ/1.66 (~175–250 Ω)

Key Features

Feature Design Value
Separate read/write ports Eliminates data bus turnaround overhead-enables full-duplex 1266 MT/s operation without arbitration logic
Four-word burst architecture Reduces address bus frequency by 4× versus single-word access-lowers routing complexity and timing closure burden
Programmable 2.5-cycle read latency DOFF pin selects between QDR II+ (2.5-cycle) and QDR I (1-cycle) modes-supports latency-sensitive or bandwidth-optimized designs
HSTL-18 I/O with variable drive Meets JEDEC HSTL Class I specs at 1.5 V; drive strength configurable to match trace impedance and reduce EMI
JTAG 1149.1 test access port Enables boundary scan testing and in-system programming-supports production test coverage and debug visibility

Applications

Network Packet Buffering Telecom Switch Fabric

Use Scenario: Storing ingress/egress packets in 10G/40G line cards where sustained 1266 MT/s read/write bandwidth is required.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer-accepts incoming frames on write port while simultaneously servicing lookup results on read port.

Use Value: Concurrent access eliminates serialization bottlenecks, enabling line-rate forwarding without packet loss under bursty traffic loads.

Use Scenario: Interfacing with SerDes-based switch ASICs in carrier-grade routers requiring deterministic 2.5-cycle latency for flow control handshaking.

IC Role / Device Role / Timing Role: High-speed scratchpad memory for header parsing engines-QVLD and echo clocks ensure sub-cycle timing alignment with ASIC timing budgets.

Use Value: Eliminates need for external delay lines or retiming flops, reducing BOM cost and board area while improving jitter tolerance.

High-Speed Test Equipment Rad-Hard Data Acquisition

Use Scenario: Capturing real-time waveform samples from multi-GHz ADCs in automated test systems with strict trigger-to-store latency requirements.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer-four-word bursts align with ADC pipeline depth, minimizing address generation logic.

Use Value: 633 MHz clock rate supports >1 Gsample/s effective capture rate; ODT removes termination resistor count and layout sensitivity.

Use Scenario: Radiation-tolerant telemetry buffers in LEO satellite payloads where neutron soft error immunity and stable 1.8 V core operation are mandatory.

IC Role / Device Role / Timing Role: Radiation-hardened SRAM for command/response logging-separate RPS/WPS prevents metastability-induced corruption during SEU events.

Use Value: Specified neutron soft error immunity (documented in datasheet Rev. *G, p.20) ensures <1E-10 errors/bit-day in orbit environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120 36-bit QDR II+, 550 MHz max, no ODT, 165-ball FBGA, 1.8 V core + 1.5 V I/O Lacks on-die termination-requires external 50 Ω resistors on all data/control lines; lower max frequency limits bandwidth ceiling Select when legacy design reuse or JTAG test compatibility with older IDT toolchains is prioritized over ODT simplification
ISSI IS61WV102436B 1M × 36 sync SRAM, 200 MHz, single-port, no DDR, no echo clocks, SOJ-119 package No concurrent read/write capability; lacks burst architecture, echo clocks, and QVLD-requires external arbitration and timing management Select only for cost-sensitive, non-burst, low-bandwidth control-plane buffers where QDR features are unnecessary

Compared with IDT72T36120 and IS61WV102436B, the CY7C2565XV18 delivers higher bandwidth (1266 vs. 1100/400 MT/s), eliminates external termination components via ODT, and provides deterministic timing via echo clocks and QVLD-making it optimal for new high-speed data path designs.

Availability

CY7C2565XV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, high-speed test equipment, and rad-hard data acquisition requiring stable component supply across extended product lifecycles.

Supply support for CY7C2565XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding communications and industrial applications.

The QDR® II+ Xtreme SRAM product line targets ultra-low-latency, high-throughput data buffering in networking, telecom, and test instrumentation-emphasizing concurrent access, timing predictability, and signal integrity at multi-GHz rates.

FAQ

What is the function of the DOFF pin on CY7C2565XV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin is sampled at power-up and latched internally-no runtime reconfiguration is supported.

How does on-die termination (ODT) work on CY7C2565XV18?

ODT applies programmable termination resistance to D[35:0], BWS[3:0], and K/K inputs using an external ZQ resistor (175–350 Ω). The ODT pin selects the range: LOW enables RQ/3.33 (~53–105 Ω), HIGH/floating enables RQ/1.66 (~105–212 Ω). Termination is active only during input sampling windows, reducing static power versus always-on resistors.

Can CY7C2565XV18 be used with a single-ended clock source?

No-the device requires true differential K/K clock inputs. The internal timing architecture relies on both rising edges for separate read/write port synchronization. Single-ended driving violates AC timing specifications and causes undefined behavior in burst alignment and echo clock generation.

What is the purpose of the QVLD signal?

QVLD (Q Valid) is an edge-aligned output that indicates when Q[35:0] data is valid relative to CQ/CQ transitions. It eliminates the need for fixed delay calibration in high-speed receivers-system logic can use QVLD as a strobe to capture Q[35:0] on its rising edge, ensuring robust setup/hold margins at 1266 MT/s.

CY7C2565XV18-633BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2565XV18-633BZC FAQ

1.How can I place an order for CY7C2565XV18-633BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2565XV18-633BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2565XV18-633BZC reliable?

The price and inventory of CY7C2565XV18-633BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565XV18-633BZC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2565XV18-633BZC transactions.

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CY7C2565XV18-633BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2565XV18-633BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2565XV18-633BZC?

For technical support, including CY7C2565XV18-633BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565XV18-633BZC requirements.

6.How does Aetrix verify that CY7C2565XV18-633BZC is sourced from the original manufacturer or authorized distributors?

All CY7C2565XV18-633BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565XV18-633BZC meets industry standards.

7.What is the process for return or replacement of CY7C2565XV18-633BZC?

All CY7C2565XV18-633BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565XV18-633BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2565XV18-633BZC part is unused and in its original packaging.

Return procedure for CY7C2565XV18-633BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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