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Cypress Semiconductor Corp CY7C2565XV18-633BZXC

Part No.:
CY7C2565XV18-633BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2565XV18-633BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,852

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Product details

Overview

CY7C2565XV18-633BZXC from Cypress Semiconductor is a 2M × 36, 72-Mbit QDR® II+ Xtreme SRAM with four-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 633 MHz with DDR interfaces on both read and write ports (1266 MT/s), supports separate read/write ports for concurrent transactions, and uses HSTL I/O with 1.8 V core and 1.5 V I/O supply-designed for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C2565XV18-633BZXC datasheet, CY7C2565XV18-633BZXC pinout, CY7C2565XV18-633BZXC application, or CY7C2565XV18-633BZXC equivalent, key selection criteria include 2.5-cycle vs. 1-cycle latency mode (DOFF-controlled), ODT configuration via ZQ/ODT pins, echo clock timing alignment (CQ/CQ), and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements a synchronous pipelined QDR II+ architecture with independent read and write ports, eliminating data bus turnaround through dedicated I/O paths. It uses dual input clocks (K/K) sampled only on rising edges and delivers four sequential 36-bit words per access, achieving full bandwidth at 633 MHz with 1266 MT/s effective data rate.

The device integrates a PLL for precise data placement, supports depth expansion via RPS/WPS port selects, and features programmable on-die termination for D[35:0], BWS[3:0], and K/K inputs-configured by ODT pin state and external ZQ resistor (175–350 Ω). DOFF pin toggles between QDR II+ (2.5-cycle latency) and QDR I (1-cycle latency) operation modes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization)
Max Clock Frequency 633 MHz - enables 1266 MT/s DDR throughput on both ports
Read Latency 2.5 cycles (DOFF = HIGH); 1 cycle (DOFF = LOW) - selectable real-time mode
Core / I/O Voltage VDD = 1.8 V ± 0.1 V; VDDQ = 1.5 V nominal - supports 1.4–1.6 V I/O range
Interface Standard HSTL Class I inputs, variable-drive HSTL outputs - ensures signal integrity at >1 GHz
On-Die Termination Configurable ODT for D[35:0], BWS[3:0], K/K - eliminates external resistors, reduces routing complexity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density, low-inductance PCB mounting

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free compatible.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edges of K/K; 36-bit parallel input path for burst writes
Q[35:0] Synchronous read data outputs Driven on rising edges of K/K; tristated automatically when RPS deasserted
RPS / WPS Read/Write Port Select (active LOW) Enables independent port activation; allows concurrent read/write without arbitration
BWS[3:0] Byte Write Selects (active LOW) Controls 9-bit byte lanes: BWS0–BWS3 cover D[8:0] to D[35:27]; enables partial writes
K / K Dual differential clock inputs Rising-edge-triggered only; drives all synchronous registers; defines DDR timing reference
CQ / CQ Echo clock outputs Free-running, K/K-synchronized clocks for simplified high-speed data capture in FPGA/ASIC receivers
QVLD Valid data indicator output Edge-aligned with CQ/CQ; signals validity of Q[35:0] during burst transfers
DOFF Latency mode control input HIGH → QDR II+ mode (2.5-cycle latency); LOW → QDR I mode (1-cycle latency)
ODT / ZQ ODT enable & impedance reference ODT pin selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); ZQ connects to precision 240 Ω resistor

Key Features

Feature Design Value
Four-word burst architecture Delivers 144 bits (36 × 4) per access in two clock cycles - halves address bus frequency vs. single-word SRAM
Separate read/write ports Enables true concurrent read and write operations - no bus contention or turnaround delay
Programmable ODT Reduces signal reflections on D[35:0], BWS[3:0], and K/K lines - eliminates 72 external termination resistors
DOFF-selectable latency Runtime switch between 2.5-cycle (high-throughput) and 1-cycle (low-latency) modes - adapts to system timing budget
HSTL Class I I/O Guarantees <15 ps skew across 36-bit data bus at 1266 MT/s - meets JEDEC HSTL-I AC timing specs

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches with cut-through forwarding.

IC Role / Device Role / Timing Role: High-speed shared memory buffer with simultaneous read (forwarding engine) and write (PHY interface) access.

Use Value: 2.5-cycle latency + 1266 MT/s bandwidth sustains 10 Gbps+ line rates while maintaining deterministic jitter margins.

Use Scenario: Frame buffering in 40G/100G OTN transport equipment requiring low-jitter, burst-aligned memory access.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store between SerDes and traffic manager ASICs.

Use Value: Echo clocks (CQ/CQ) align data capture with FPGA IDELAYCTRL, reducing setup/hold violations by >120 ps.

High-Frequency Trading Engine AI Inference Preprocessing Buffer

Use Scenario: Low-latency order book updates and market data caching in FPGA-accelerated trading platforms.

IC Role / Device Role / Timing Role: Deterministic latency SRAM interfaced directly to Xilinx Ultrascale+ GTY transceivers.

Use Value: DOFF = LOW configures 1-cycle latency mode, enabling sub-8 ns round-trip memory access critical for microsecond-level execution.

Use Scenario: Temporary storage of quantized activation maps between convolution layers in edge AI accelerators.

IC Role / Device Role / Timing Role: Burst-access scratchpad memory feeding tensor processing units with 36-bit aligned data streams.

Use Value: Four-word burst delivers 144-bit chunks matching typical INT8/FP16 vector widths - minimizes memory stall cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150L10BG 36-Mbit (1M × 36), 1000 MHz max, 1.5-cycle latency, LVDS I/O, 2.5 V core Higher speed but lower density; requires LVDS termination and 2.5 V supply - incompatible with 1.8 V systems Select when >1 Gbps bandwidth is required and system supports LVDS signaling and higher voltage rails.
ISSI IS61WV102436B 36-Mbit (1M × 36), 200 MHz max, asynchronous interface, 3.3 V only, no ODT or echo clocks No burst, no DDR, no concurrency - suitable only for legacy control-plane buffering, not data-path acceleration Choose only for cost-sensitive, non-real-time applications where bandwidth <400 MB/s is acceptable.

Compared with IDT72T36150L10BG and IS61WV102436B, CY7C2565XV18-633BZXC uniquely balances 72-Mbit density, 1266 MT/s DDR bandwidth, 2.5-cycle latency configurability, and 1.8 V/HSTL compatibility - making it optimal for modern 10G+ networking and low-voltage FPGA-based accelerators.

Availability

CY7C2565XV18-633BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-frequency trading engines, and AI inference preprocessing requiring stable component supply across extended production lifecycles.

Supply support for CY7C2565XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and power efficiency.

CY7C2565XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, high-throughput data-path buffering in multi-gigabit communication infrastructure where concurrent read/write and sub-10 ns latency are mandatory.

FAQ

What is the function of the DOFF pin on CY7C2565XV18-633BZXC?

The DOFF (Data-Off) pin controls read latency mode: when asserted HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency for maximum bandwidth; when LOW, it reverts to QDR I mode with 1-cycle latency for minimal access delay. This is a static configuration pin sampled at power-up and during reset - no runtime switching is supported.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled via the ODT pin and calibrated using an external 240 Ω resistor on the ZQ pin. When ODT = HIGH, termination resistance equals RQ/1.66 (~144 Ω); when LOW, it equals RQ/3.33 (~72 Ω). This programmable termination applies to all D[35:0], BWS[3:0], and K/K inputs - eliminating 76 external resistors and improving signal fidelity at 1266 MT/s.

Can CY7C2565XV18-633BZXC be used with a 1.35 V I/O supply?

No. The device specifies VDDQ = 1.4 V to 1.6 V minimum/maximum operating range, with 1.5 V as the nominal value. Operation at 1.35 V falls outside datasheet limits and risks timing violations, data corruption, and reduced noise margin - especially on HSTL Class I outputs which require ≥1.4 V for valid logic thresholds.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, K/K-synchronized output clocks provided to simplify high-speed data capture in receiving logic (e.g., FPGA IOBs). They replicate the phase and jitter profile of K/K, allowing use of IDELAY/ODELAY primitives to deskew Q[35:0] relative to CQ - achieving <20 ps data-eye alignment without complex PLL-based clock recovery.

CY7C2565XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2565XV18-633BZXC FAQ

1.How can I place an order for CY7C2565XV18-633BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2565XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2565XV18-633BZXC reliable?

The price and inventory of CY7C2565XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2565XV18-633BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2565XV18-633BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2565XV18-633BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2565XV18-633BZXC?

CY7C2565XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2565XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2565XV18-633BZXC?

For technical support, including CY7C2565XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2565XV18-633BZXC requirements.

6.How does Aetrix verify that CY7C2565XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2565XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2565XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2565XV18-633BZXC?

All CY7C2565XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2565XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2565XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C2565XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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