Cypress Semiconductor Corp CY7C2568KV18-400BZXC
- Part No.:
- CY7C2568KV18-400BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2568KV18-400BZXC.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2568KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with DDR II+ architecture, configured as 4M × 18-bit, operating at up to 400 MHz (2.5-cycle read latency), supporting 1.8V core and 1.4–1.8V I/O supply, and featuring on-die termination (ODT) for D[x:0], BWS[x:0], and K/K inputs - deployed in high-bandwidth networking line cards and packet buffer subsystems.
For engineers reviewing the CY7C2568KV18 datasheet, CY7C2568KV18 pinout, CY7C2568KV18 application, or CY7C2568KV18 equivalent, key selection criteria include burst depth (2-word), echo clock (CQ/CQ) timing alignment, QVLD data validity signaling, HSTL-compatible I/O drive, and FBGA-165 package compatibility with high-density PCB routing constraints.
Technical Context
The device implements a synchronous pipelined SRAM core with dual-clock DDR II+ interface: addresses latched on alternate rising edges of K/K, write data registered on both K and K rising edges, and read data driven synchronously on both K and K rising edges. It uses internal PLL for precise data placement and supports programmable ODT via ZQ calibration.
Read operations use 2.5-cycle latency when DOFF = HIGH and 1-cycle latency when DOFF = LOW; echo clocks CQ/CQ align with output data edges, and QVLD provides edge-aligned valid-data indication. All synchronous inputs pass through K/K-controlled registers, and writes are self-timed internally.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 72 Mbit (4M × 18-bit organization) |
| Max Clock Frequency | 400 MHz - defines maximum sustained bandwidth of 1.44 GB/s (18-bit × 2 words × 400 MHz) |
| Read Latency | 2.5 cycles (DOFF = HIGH) - determines minimum read turnaround time in burst sequences |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - enables interoperability with 1.5V and 1.8V memory controllers |
| Core Supply | VDD = 1.8 V ± 0.1 V - sets power rail tolerance for stable SRAM cell operation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - supports fine-pitch routing and thermal dissipation in dense ASIC/FPGA interfaces |
| Termination | On-die termination (ODT) for D[x:0], BWS[x:0], K/K - eliminates external resistors and reduces stub reflections |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AB footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | 18-bit DDR data path - sampled on K/K rising edges during writes; driven on K/K rising edges during reads with QVLD synchronization |
| K / K | Dual differential input clocks | Master timing references - K controls address/lower-phase sampling; K controls data/upper-phase sampling; both required for DDR timing |
| CQ / CQ | Output echo clocks | Phase-matched copies of K/K - simplify system-level data capture without per-device skew compensation |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ - signals when DQ[17:0] contains stable, valid read data for latch capture |
| BWS[1:0] | Byte write select inputs | Active-low controls for 9-bit byte groups - BWS0 enables DQ[8:0], BWS1 enables DQ[17:9]; allows partial writes without read-modify-write |
| LD | Load strobe | Synchronous address/load enable - sampled on K rising edge to define start of burst transaction |
| R/W | Read/write direction | Sampled with LD - HIGH = read, LOW = write; determines data flow direction for current burst |
| ODT | On-die termination control | Selects ODT resistance range (LOW = ~175–350 Ω) based on ZQ calibration resistor value |
| ZQ | Impedance calibration reference | Connects to external precision resistor (240 Ω typical) - enables dynamic ODT matching to PCB trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| 2-word DDR burst | Reduces address bus toggling frequency by 50% versus single-word access - lowers EMI and simplifies controller address generation |
| Programmable ODT | Eliminates 36 external termination resistors for DQ/BWS/K/K lines - saves >12 mm² board area and improves signal integrity at 1100 MT/s |
| QVLD + echo clocks | Removes need for separate capture clocks or deskew logic - enables deterministic data capture across temperature/voltage corners |
| DOFF-selectable latency | Switches between 2.5-cycle (high-throughput) and 1-cycle (low-latency) modes - supports mixed workload optimization in buffer management |
| HSTL I/O buffers | Guarantees <100 ps output skew across all 18 DQ pins - ensures setup/hold compliance in 400 MHz systems with tight timing margins |
Applications
| Packet Buffer Memory | Network Processor Interface |
|---|---|
Use Scenario: Line-rate buffering of 10G Ethernet frames in telecom aggregation switches. IC Role / Device Role / Timing Role: High-speed, low-latency shared memory for ingress/egress packet queues with burst-aligned read/write. Use Value: 2-word burst + 400 MHz clock delivers 1.44 GB/s bandwidth sufficient for full-duplex 10GbE wire-speed buffering without backpressure. | Use Scenario: External memory for multi-core network processors executing deep packet inspection. IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM interfacing directly to NP's parallel memory bus with echo-clock–driven capture. Use Value: QVLD and CQ/CQ eliminate timing closure challenges across 18-bit data paths, enabling reliable operation at 400 MHz across voltage/temperature. |
| Baseband Processing Buffer | High-Speed Test Equipment Memory |
Use Scenario: Real-time frame storage in LTE eNodeB baseband units handling multiple concurrent users. IC Role / Device Role / Timing Role: Burst-accessible memory for channel estimation and FFT result staging with deterministic 2.5-cycle latency. Use Value: DOFF-selectable latency allows runtime trade-off between throughput (2.5-cycle) and scheduling predictability (1-cycle) in dynamic radio resource allocation. | Use Scenario: Pattern memory in automated test equipment generating high-fidelity digital stimulus waveforms. IC Role / Device Role / Timing Role: Low-jitter, high-reliability memory for waveform lookup tables synchronized to system master clock. Use Value: On-die termination and HSTL outputs maintain <5 ps jitter on DQ edges - critical for sub-nanosecond timing resolution in ATE applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-15JCIN | Asynchronous 32K × 8 SRAM, 15 ns access, no DDR, no ODT, 5V supply | Used in legacy control-plane buffers where timing simplicity outweighs bandwidth needs | Select only for non-burst, non-DDR designs requiring zero-wait-state async access and 5V compatibility |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM, 10 ns cycle time, single data rate, no echo clocks or QVLD | Deployed in cost-sensitive industrial controllers needing moderate bandwidth without DDR complexity | Choose when system lacks DDR clocking infrastructure and can tolerate lower peak bandwidth (≤1.8 Gb/s) |
Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C2568KV18 uniquely delivers DDR II+ burst bandwidth, echo-clock–assisted timing closure, and programmable ODT - essential for 10G+ data path integrity where asynchronous or single-rate alternatives fail to meet timing or signal integrity requirements.
Availability
CY7C2568KV18 is available at Aetrix Electronics and suitable for packet buffer memory, network processor interface, baseband processing buffer, and high-speed test equipment applications requiring stable component supply across extended product lifecycles.
Supply support for CY7C2568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C2568KV18 belongs to the QDR II+ SRAM product line, designed specifically to replace legacy SRAMs in bandwidth-constrained DDR memory interfaces while maintaining pin- and function-compatibility with existing QDR II layouts.
FAQ
What is the function of the DOFF pin on CY7C2568KV18?
The DOFF (Double-Off) pin selects read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for maximum bandwidth; when LOW, it reverts to 1-cycle latency like standard DDR I devices. This dual-mode capability allows system designers to optimize for either throughput or latency depending on real-time traffic patterns without hardware change.
How does on-die termination (ODT) work with the ZQ pin?
ODT uses the ZQ pin to calibrate internal termination resistors against an external 240 Ω reference resistor. During power-up initialization, the device measures ZQ and configures ODT strength accordingly. The ODT pin then selects between two calibrated ranges (LOW ≈ 175–350 Ω, HIGH ≈ 50–100 Ω), enabling impedance matching to varied PCB trace impedances without discrete resistors.
Can CY7C2568KV18 operate with only one clock (K) instead of K and K?
No - K and K are complementary differential clocks both required for proper DDR II+ operation. The device samples addresses on alternating K/K edges and transfers data on both rising edges. Using only K violates timing architecture and will cause functional failure; both clocks must be provided with matched trace lengths and controlled skew per datasheet AC specifications.
What is the purpose of the QVLD signal and how is it timed?
QVLD (Q Valid) is an edge-aligned output that indicates when DQ[17:0] data is valid and stable for capture. It transitions synchronously with the rising edges of CQ and CQ, providing a clean, jitter-free strobe for external latches. Its timing eliminates setup/hold uncertainty in high-speed systems where data eye widths shrink below 100 ps at 400 MHz operation.
CY7C2568KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2568KV18-400BZXC FAQ
1.How can I place an order for CY7C2568KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2568KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2568KV18-400BZXC reliable?
The price and inventory of CY7C2568KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2568KV18-400BZXC is usually 5 days.
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Once your CY7C2568KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2568KV18-400BZXC?
For technical support, including CY7C2568KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2568KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C2568KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2568KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2568KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2568KV18-400BZXC?
All CY7C2568KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2568KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2568KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C2568KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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