Cypress Semiconductor Corp CY7C2568XV18-600BZXC
- Part No.:
- CY7C2568XV18-600BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2568XV18-600BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:105
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Product details
Overview
CY7C2568XV18-600BZXC from Cypress Semiconductor is a 72-Mbit DDR II+ Xtreme SRAM (4 M × 18 configuration) with synchronous pipelined architecture, 2.5-cycle read latency, on-die termination (ODT), and echo clocks (CQ/CQ) for precise DDR data capture. It operates at 600 MHz clock frequency (1200 MT/s effective data rate), supports 1.8 V core supply and 1.5 V I/O (VDDQ), and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and FPGA-based protocol accelerators.
For engineers reviewing the CY7C2568XV18-600BZXC datasheet, CY7C2568XV18-600BZXC pinout, CY7C2568XV18-600BZXC application, or CY7C2568XV18-600BZXC equivalent, key selection criteria include DDR II+ burst timing compliance, ODT support for DQ/BWS/K/K inputs, QVLD-synchronized output validity, HSTL-compatible I/O drive, and PLL-controlled data placement accuracy under 600 MHz operation.
Technical Context
This SRAM implements a two-word burst architecture where each address access delivers two consecutive 18-bit words on alternating rising edges of K and K clocks. Read latency is configurable: 2.5 cycles when DOFF = HIGH (DDR II+ mode), or 1 cycle when DOFF = LOW (DDR I compatibility mode).
The device integrates echo clocks (CQ/CQ) aligned to K/K for simplified system-level data capture, a dedicated QVLD signal edge-aligned to CQ/CQ indicating valid output data, and on-die termination enabled only during write operations for DQ[17:0], BWS[1:0], and both K/K inputs - eliminating external termination resistors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 72 Mbit, configured as 4 M × 18 (two 2 M × 18 arrays) |
| Max Clock Frequency | 600 MHz - defines maximum sustained burst throughput of 1.2 Gb/s per data pin |
| Read Latency | 2.5 clock cycles (DOFF = HIGH) - determines minimum read-to-read interval in DDR II+ mode |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.5 V nominal - enables low-power, high-speed HSTL interface |
| Burst Length | Two-word burst - halves required address bus transitions versus single-word access |
| ODT Support | Active on DQ[17:0], BWS[1:0], K, and K inputs during writes - replaces four external 50 Ω terminations |
| Output Validity Signal | QVLD synchronized to CQ/CQ rising edges - eliminates need for separate strobe routing in multi-SRAM systems |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data I/O | Transfers two 18-bit words per access; sampled on K/K rising edges during writes, driven on K/K rising edges during reads |
| K / K | Differential input clocks | Rising edges control all synchronous timing; K used for address/control latching, both used for data capture/driving |
| CQ / CQ | Output echo clocks | Free-running, K-synchronized clocks aligned to Q[17:0] output edges - enable source-synchronous data capture without board-level skew compensation |
| QVLD | Valid data indicator output | Asserted high synchronously with CQ/CQ rising edges to mark valid DQ[17:0] data windows |
| ODT | On-die termination select input | Selects ODT resistance range (RQ/3.33 or RQ/1.66) during power-up; floating defaults to high-range mode |
| ZQ | Impedance calibration reference | Connected to external resistor to ground; sets output driver impedance to 0.2 × RQ for CQ/CQ/Q[17:0] |
| LD | Load control input | Latched on K rising edge to define start of burst transaction; must be stable before K edge to initiate valid access |
| R/W | Read/write direction control | Sampled on K rising edge when LD is LOW; HIGH = read, LOW = write - defines burst operation type |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs, lowering EMI and routing complexity in high-speed designs |
| Configurable read latency (1 or 2.5 cycles) | Enables drop-in replacement for DDR I systems (DOFF = LOW) or performance-optimized DDR II+ operation (DOFF = HIGH) |
| Integrated echo clocks (CQ/CQ) | Eliminates need for board-level fly-by clock routing; allows deterministic data capture across multiple SRAMs sharing same K/K |
| HSTL-compatible I/O with variable drive strength | Meets JEDEC HSTL Class I specifications; drive strength calibrated via ZQ pin to match 50 Ω transmission lines |
| On-die termination for DQ, BWS, and clock inputs | Removes 12 external 50 Ω resistors per device, saving >20 mm² PCB area and simplifying layout for dense memory subsystems |
Applications
| Network Packet Buffering | FPGA-Based Protocol Acceleration |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/3 switches with line-rate throughput. IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst buffer interfacing directly to MAC controller's DDR-capable interface. Use Value: 2.5-cycle latency and echo-clock–synchronized QVLD ensure deterministic frame boundary alignment without FIFO glue logic. |
Use Scenario: Acting as instruction/data cache for soft-core processors (e.g., MicroBlaze) executing real-time packet inspection algorithms. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing dual-word fetches per clock to sustain processor IPC under bursty traffic loads. Use Value: On-die termination and HSTL I/O maintain signal integrity at 600 MHz, enabling reliable operation without board-level termination tuning. |
| Telecom Line Card Memory | High-Speed Test Equipment Buffering |
|
Use Scenario: Buffering TDM time-slot data in CPRI/eCPRI fronthaul interfaces requiring sub-10 ns timing margins. IC Role / Device Role / Timing Role: DDR II+ Xtreme SRAM delivering deterministic 2-word bursts synchronized to fronthaul clock domain via K/K and CQ/CQ. Use Value: QVLD signal eliminates setup/hold uncertainty at receiver, reducing timing closure effort in ASIC/FPGA interface design. |
Use Scenario: Capturing high-resolution waveform samples from multi-GHz ADCs in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: High-throughput burst memory staging acquired samples before serial compression or analysis. Use Value: 600 MHz clock + 1200 MT/s effective bandwidth supports ≥1.2 GSPS sustained write rates with self-timed write circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2568XV18-633BZXC | Higher max clock (633 MHz vs. 600 MHz); identical pinout, timing, and feature set | Requires tighter board-level timing margin; suitable only where system clock budget permits +33 MHz headroom | Select when system-level timing analysis confirms setup/hold slack at 633 MHz; otherwise prefer -600BZXC for robustness |
| IS61WV102418BLL-10TLI | Asynchronous 1M × 18 SRAM; no DDR interface, ODT, echo clocks, or QVLD; 10 ns access time | Limited to lower-bandwidth control-plane buffering; cannot replace DDR II+ burst behavior or timing-critical data-path roles | Only viable for non-burst, non-DDR legacy designs where bandwidth < 200 MB/s suffices and timing determinism is not required |
Compared with CY7C2568XV18-633BZXC, the -600BZXC offers greater timing margin at cost of 5.2% bandwidth reduction; versus IS61WV102418BLL-10TLI, it delivers 6× higher effective throughput and deterministic DDR timing but requires full DDR interface implementation.
Availability
CY7C2568XV18-600BZXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, telecom line card memory, and high-speed test equipment buffering requiring stable component supply across extended production lifecycles.
Supply support for CY7C2568XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.
The DDR II+ Xtreme SRAM product line was designed specifically for deterministic, high-bandwidth data buffering in DDR-capable networking and test equipment, emphasizing timing precision, on-die signal integrity features, and seamless FPGA/ASIC integration.
FAQ
What is the function of the DOFF pin on CY7C2568XV18-600BZXC?
The DOFF (Disable Off-mode) pin configures read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle read latency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This pin is sampled at power-up and remains latched, allowing hardware-selectable timing behavior without firmware intervention.
How does on-die termination (ODT) operate on CY7C2568XV18-600BZXC?
ODT activates automatically only during write operations on DQ[17:0], BWS[1:0], and K/K inputs. Its resistance value is selected at power-up via the ODT pin state and calibrated using the ZQ pin's external resistor. ODT deactivates during reads, ensuring clean signal reception without loading the data bus.
Can CY7C2568XV18-600BZXC interface directly with Xilinx UltraScale FPGAs?
Yes - its HSTL Class I–compliant I/O, 600 MHz DDR timing, echo clocks (CQ/CQ), and QVLD signal align with Xilinx UltraScale FPGA memory interface requirements. The 165-ball FBGA footprint matches common FPGA package escape patterns, and the 1.5 V VDDQ is compatible with UltraScale HP I/O banks.
What is the role of the ZQ pin beyond impedance calibration?
ZQ exclusively calibrates output driver impedance for CQ, CQ, and Q[17:0] pins to 0.2 × RQ (where RQ is the resistor tied between ZQ and GND). It has no secondary function: it cannot be left floating, tied to VDDQ (allowed only for min-impedance mode), or connected to GND. Misconnection causes undefined output drive strength and signal integrity failure.
CY7C2568XV18-600BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 600 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2568XV18-600BZXC FAQ
1.How can I place an order for CY7C2568XV18-600BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2568XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2568XV18-600BZXC reliable?
The price and inventory of CY7C2568XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2568XV18-600BZXC is usually 5 days.
3.What payment methods are accepted for CY7C2568XV18-600BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2568XV18-600BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C2568XV18-600BZXC?
CY7C2568XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2568XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2568XV18-600BZXC?
For technical support, including CY7C2568XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2568XV18-600BZXC requirements.
6.How does Aetrix verify that CY7C2568XV18-600BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2568XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2568XV18-600BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2568XV18-600BZXC?
All CY7C2568XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2568XV18-600BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2568XV18-600BZXC part is unused and in its original packaging.
Return procedure for CY7C2568XV18-600BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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