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Cypress Semiconductor Corp CY7C2568XV18-600BZXC

Part No.:
CY7C2568XV18-600BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2568XV18-600BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
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Shipping

Inventory:105

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Product details

Overview

CY7C2568XV18-600BZXC from Cypress Semiconductor is a 72-Mbit DDR II+ Xtreme SRAM (4 M × 18 configuration) with synchronous pipelined architecture, 2.5-cycle read latency, on-die termination (ODT), and echo clocks (CQ/CQ) for precise DDR data capture. It operates at 600 MHz clock frequency (1200 MT/s effective data rate), supports 1.8 V core supply and 1.5 V I/O (VDDQ), and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and FPGA-based protocol accelerators.

For engineers reviewing the CY7C2568XV18-600BZXC datasheet, CY7C2568XV18-600BZXC pinout, CY7C2568XV18-600BZXC application, or CY7C2568XV18-600BZXC equivalent, key selection criteria include DDR II+ burst timing compliance, ODT support for DQ/BWS/K/K inputs, QVLD-synchronized output validity, HSTL-compatible I/O drive, and PLL-controlled data placement accuracy under 600 MHz operation.

Technical Context

This SRAM implements a two-word burst architecture where each address access delivers two consecutive 18-bit words on alternating rising edges of K and K clocks. Read latency is configurable: 2.5 cycles when DOFF = HIGH (DDR II+ mode), or 1 cycle when DOFF = LOW (DDR I compatibility mode).

The device integrates echo clocks (CQ/CQ) aligned to K/K for simplified system-level data capture, a dedicated QVLD signal edge-aligned to CQ/CQ indicating valid output data, and on-die termination enabled only during write operations for DQ[17:0], BWS[1:0], and both K/K inputs - eliminating external termination resistors.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, configured as 4 M × 18 (two 2 M × 18 arrays)
Max Clock Frequency 600 MHz - defines maximum sustained burst throughput of 1.2 Gb/s per data pin
Read Latency 2.5 clock cycles (DOFF = HIGH) - determines minimum read-to-read interval in DDR II+ mode
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.5 V nominal - enables low-power, high-speed HSTL interface
Burst Length Two-word burst - halves required address bus transitions versus single-word access
ODT Support Active on DQ[17:0], BWS[1:0], K, and K inputs during writes - replaces four external 50 Ω terminations
Output Validity Signal QVLD synchronized to CQ/CQ rising edges - eliminates need for separate strobe routing in multi-SRAM systems

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data I/O Transfers two 18-bit words per access; sampled on K/K rising edges during writes, driven on K/K rising edges during reads
K / K Differential input clocks Rising edges control all synchronous timing; K used for address/control latching, both used for data capture/driving
CQ / CQ Output echo clocks Free-running, K-synchronized clocks aligned to Q[17:0] output edges - enable source-synchronous data capture without board-level skew compensation
QVLD Valid data indicator output Asserted high synchronously with CQ/CQ rising edges to mark valid DQ[17:0] data windows
ODT On-die termination select input Selects ODT resistance range (RQ/3.33 or RQ/1.66) during power-up; floating defaults to high-range mode
ZQ Impedance calibration reference Connected to external resistor to ground; sets output driver impedance to 0.2 × RQ for CQ/CQ/Q[17:0]
LD Load control input Latched on K rising edge to define start of burst transaction; must be stable before K edge to initiate valid access
R/W Read/write direction control Sampled on K rising edge when LD is LOW; HIGH = read, LOW = write - defines burst operation type

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs, lowering EMI and routing complexity in high-speed designs
Configurable read latency (1 or 2.5 cycles) Enables drop-in replacement for DDR I systems (DOFF = LOW) or performance-optimized DDR II+ operation (DOFF = HIGH)
Integrated echo clocks (CQ/CQ) Eliminates need for board-level fly-by clock routing; allows deterministic data capture across multiple SRAMs sharing same K/K
HSTL-compatible I/O with variable drive strength Meets JEDEC HSTL Class I specifications; drive strength calibrated via ZQ pin to match 50 Ω transmission lines
On-die termination for DQ, BWS, and clock inputs Removes 12 external 50 Ω resistors per device, saving >20 mm² PCB area and simplifying layout for dense memory subsystems

Applications

Network Packet Buffering FPGA-Based Protocol Acceleration

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst buffer interfacing directly to MAC controller's DDR-capable interface.

Use Value: 2.5-cycle latency and echo-clock–synchronized QVLD ensure deterministic frame boundary alignment without FIFO glue logic.

Use Scenario: Acting as instruction/data cache for soft-core processors (e.g., MicroBlaze) executing real-time packet inspection algorithms.

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing dual-word fetches per clock to sustain processor IPC under bursty traffic loads.

Use Value: On-die termination and HSTL I/O maintain signal integrity at 600 MHz, enabling reliable operation without board-level termination tuning.

Telecom Line Card Memory High-Speed Test Equipment Buffering

Use Scenario: Buffering TDM time-slot data in CPRI/eCPRI fronthaul interfaces requiring sub-10 ns timing margins.

IC Role / Device Role / Timing Role: DDR II+ Xtreme SRAM delivering deterministic 2-word bursts synchronized to fronthaul clock domain via K/K and CQ/CQ.

Use Value: QVLD signal eliminates setup/hold uncertainty at receiver, reducing timing closure effort in ASIC/FPGA interface design.

Use Scenario: Capturing high-resolution waveform samples from multi-GHz ADCs in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: High-throughput burst memory staging acquired samples before serial compression or analysis.

Use Value: 600 MHz clock + 1200 MT/s effective bandwidth supports ≥1.2 GSPS sustained write rates with self-timed write circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2568XV18-633BZXC Higher max clock (633 MHz vs. 600 MHz); identical pinout, timing, and feature set Requires tighter board-level timing margin; suitable only where system clock budget permits +33 MHz headroom Select when system-level timing analysis confirms setup/hold slack at 633 MHz; otherwise prefer -600BZXC for robustness
IS61WV102418BLL-10TLI Asynchronous 1M × 18 SRAM; no DDR interface, ODT, echo clocks, or QVLD; 10 ns access time Limited to lower-bandwidth control-plane buffering; cannot replace DDR II+ burst behavior or timing-critical data-path roles Only viable for non-burst, non-DDR legacy designs where bandwidth < 200 MB/s suffices and timing determinism is not required

Compared with CY7C2568XV18-633BZXC, the -600BZXC offers greater timing margin at cost of 5.2% bandwidth reduction; versus IS61WV102418BLL-10TLI, it delivers 6× higher effective throughput and deterministic DDR timing but requires full DDR interface implementation.

Availability

CY7C2568XV18-600BZXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, telecom line card memory, and high-speed test equipment buffering requiring stable component supply across extended production lifecycles.

Supply support for CY7C2568XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The DDR II+ Xtreme SRAM product line was designed specifically for deterministic, high-bandwidth data buffering in DDR-capable networking and test equipment, emphasizing timing precision, on-die signal integrity features, and seamless FPGA/ASIC integration.

FAQ

What is the function of the DOFF pin on CY7C2568XV18-600BZXC?

The DOFF (Disable Off-mode) pin configures read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle read latency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This pin is sampled at power-up and remains latched, allowing hardware-selectable timing behavior without firmware intervention.

How does on-die termination (ODT) operate on CY7C2568XV18-600BZXC?

ODT activates automatically only during write operations on DQ[17:0], BWS[1:0], and K/K inputs. Its resistance value is selected at power-up via the ODT pin state and calibrated using the ZQ pin's external resistor. ODT deactivates during reads, ensuring clean signal reception without loading the data bus.

Can CY7C2568XV18-600BZXC interface directly with Xilinx UltraScale FPGAs?

Yes - its HSTL Class I–compliant I/O, 600 MHz DDR timing, echo clocks (CQ/CQ), and QVLD signal align with Xilinx UltraScale FPGA memory interface requirements. The 165-ball FBGA footprint matches common FPGA package escape patterns, and the 1.5 V VDDQ is compatible with UltraScale HP I/O banks.

What is the role of the ZQ pin beyond impedance calibration?

ZQ exclusively calibrates output driver impedance for CQ, CQ, and Q[17:0] pins to 0.2 × RQ (where RQ is the resistor tied between ZQ and GND). It has no secondary function: it cannot be left floating, tied to VDDQ (allowed only for min-impedance mode), or connected to GND. Misconnection causes undefined output drive strength and signal integrity failure.

CY7C2568XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2568XV18-600BZXC FAQ

1.How can I place an order for CY7C2568XV18-600BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2568XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2568XV18-600BZXC reliable?

The price and inventory of CY7C2568XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2568XV18-600BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2568XV18-600BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2568XV18-600BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2568XV18-600BZXC?

CY7C2568XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2568XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2568XV18-600BZXC?

For technical support, including CY7C2568XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2568XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C2568XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2568XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2568XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2568XV18-600BZXC?

All CY7C2568XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2568XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2568XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C2568XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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