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Cypress Semiconductor Corp CY7C25702KV18-400BZC

Part No.:
CY7C25702KV18-400BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C25702KV18-400BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:163

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Product details

Overview

CY7C25702KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 2.5-cycle read latency (DOFF = HIGH), 550 MHz clock support, and on-die termination (ODT) for DQ/BWS/K/K inputs - deployed in high-bandwidth networking line cards and packet buffer subsystems.

For engineers reviewing the CY7C25702KV18 datasheet, CY7C25702KV18 pinout, CY7C25702KV18 application, or CY7C25702KV18 equivalent, key selection criteria include burst depth (2-word), echo clock timing (CQ/CQ alignment), QVLD validity signaling, HSTL I/O compatibility, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This device implements a synchronous DDR II+ interface with dual input clocks (K and K) - all address, control, and data inputs registered on rising edges of K or K. Read data is driven on both K and K rising edges, with QVLD edge-aligned to CQ/CQ for precise capture.

The internal architecture uses two 1M × 36 arrays, supports byte-write via four BWS signals (BWS[3:0]), and integrates a PLL for accurate data placement. ODT range selection (RQ/3.33 or RQ/1.66) is controlled by the ODT pin at power-up, with ZQ calibration enabling impedance matching without external resistors.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, 2M × 36 - enables compact 36-bit wide memory interfaces without external width expansion.
Max Clock Frequency 550 MHz - delivers 1100 MT/s effective data rate using DDR transfers on both K and K edges.
Read Latency 2.5 cycles (DOFF = HIGH) - determines minimum clock-to-data delay for system timing budgeting.
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage board designs with 1.5 V or 1.8 V I/O rails.
ODT Support Active on DQ[35:0], BWS[3:0], K, K - eliminates 24+ external termination resistors, reducing PCB area and signal integrity complexity.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint compatible with automated SMT assembly and thermal management in dense modules.
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures compatibility with FPGA and ASIC memory controllers using HSTL-18 signaling.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with QVLD synchronization.
BWS[3:0] Byte write select (active LOW) Four independent 9-bit byte masks - enables partial-word writes without read-modify-write overhead in packet processing buffers.
K / K Differential clock inputs Edge-aligned complementary clocks; all synchronous logic referenced to rising edges - defines DDR timing window and enables precise setup/hold margins.
CQ / CQ Echo clock outputs Free-running clocks synchronized to K; used by receiving logic to latch DQ data without skew compensation circuitry.
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ rising edges - directly gates data capture in FPGA logic, eliminating need for manual timing margining.
ODT On-die termination control Selects ODT resistance range (RQ/3.33 or RQ/1.66) at power-up; floating default = high range - simplifies board-level impedance tuning.
ZQ Impedance calibration reference Connects to 240 Ω ±1% resistor to VSS; calibrates output drive strength and ODT values across voltage/temperature - ensures consistent signal integrity.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 2× versus single-word SRAMs - lowers EMI and routing congestion in high-speed backplanes.
Programmable 2.5-cycle or 1-cycle read latency DOFF pin selects DDR II+ (2.5-cycle) or DDR I (1-cycle) mode - allows runtime optimization for latency-critical vs. bandwidth-critical applications.
Integrated PLL with echo clocks (CQ/CQ) Eliminates need for external clock forwarding ICs - simplifies layout and reduces jitter accumulation in multi-SRAM systems.
HSTL-compatible I/O with variable drive strength Supports JEDEC HSTL Class I specs and adjustable output current - ensures signal integrity across varying trace lengths and loads.
JTAG 1149.1 boundary scan Enables production testability and debug visibility without additional test points - critical for high-reliability telecom hardware validation.

Applications

Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency burst SRAM serving as first-level packet buffer between MAC and switching fabric.

Use Value: 2.5-cycle latency + echo clocks enable deterministic 550 MHz operation without external deserialization logic - cuts FPGA resource usage by ~18%.

Use Scenario: Buffering TDM and packetized voice/data streams in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous DDR II+ memory interfacing directly with TI/Analog Devices DSPs and SerDes PHYs.

Use Value: On-die termination and HSTL I/O eliminate 32 discrete 50 Ω resistors per device - reduces BOM cost and improves signal fidelity at 1.1 Gbps.

High-Speed Test Equipment Memory Radar Signal Processing Buffer

Use Scenario: Capturing high-resolution waveform samples in automated test equipment with real-time analysis pipelines.

IC Role / Device Role / Timing Role: Burst-access memory staging raw ADC data before FFT or pattern-matching engines.

Use Value: QVLD-synchronized data valid indication removes need for custom strobe recovery circuits - accelerates firmware bring-up by 3–4 weeks.

Use Scenario: Temporary storage of chirp-based radar return samples prior to digital beamforming in phased-array systems.

IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory supporting 500+ MHz sampling clocks and parallel processing paths.

Use Value: Dual 1M × 36 arrays allow interleaved access patterns - sustains >92% sustained bandwidth under continuous 2-word burst traffic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT 72T36120L10PFI 4M × 36, 10 ns latency, LVDS interface, no ODT or echo clocks Requires external termination and clock forwarding; suited for lower-frequency deterministic systems Prefer when legacy LVDS controller compatibility is required and board space permits external resistors.
ISSI IS61WV102436BLL-15BLI 1M × 36, 15 ns async access, no DDR, no burst, no ODT Asynchronous interface limits max throughput to ~67 MHz; lacks QVLD/CQ timing aids Only viable for cost-sensitive, non-real-time buffering where latency >10 ns is acceptable.

Compared with IDT 72T36120L10PFI and ISSI IS61WV102436BLL-15BLI, CY7C25702KV18 uniquely delivers DDR II+ timing, integrated ODT, and echo-clock–based data capture - enabling higher bandwidth, lower system component count, and reduced FPGA logic overhead in 500+ MHz applications.

Availability

CY7C25702KV18 is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, high-speed test equipment memory, and radar signal processing buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C25702KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C25702KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin?

The DOFF (Double-Off) pin configures the device's read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to DDR I mode with 1-cycle latency. This pin is sampled only at power-up and remains latched until reset, allowing system-level trade-offs between bandwidth and timing margin.

How does on-die termination (ODT) work on this SRAM?

ODT applies programmable termination resistance to DQ[35:0], BWS[3:0], K, and K inputs using an internal resistor network calibrated against the ZQ pin. The ODT pin selects between two ranges: LOW sets RQ/3.33 (~72 Ω for 240 Ω ZQ), HIGH sets RQ/1.66 (~144 Ω). This eliminates 28+ external resistors while maintaining signal integrity at 1100 MT/s.

Can CY7C25702KV18 be used with a 400 MHz system clock?

Yes - the device is rated for 400 MHz operation (see Ordering Code suffix "-400BZC"). At 400 MHz, typical operating current is 750 mA (for 2M × 36), and AC timing parameters (e.g., tKQ, tKHK) scale linearly. All features - including ODT, QVLD, and echo clocks - remain fully functional; only maximum bandwidth reduces from 1100 to 800 MT/s.

What is the role of the CQ and CQ echo clocks?

CQ and CQ are free-running output clocks synchronized to the input K clock, with fixed phase alignment to DQ data edges. They serve as dedicated capture clocks for downstream logic (e.g., FPGA input registers), removing skew sensitivity and eliminating the need for dynamic deskew circuits or complex timing closure across multiple SRAM devices in parallel configurations.

CY7C25702KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C25702KV18-400BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C25702KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C25702KV18-400BZC reliable?

The price and inventory of CY7C25702KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25702KV18-400BZC is usually 5 days.

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CY7C25702KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C25702KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C25702KV18-400BZC?

For technical support, including CY7C25702KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25702KV18-400BZC requirements.

6.How does Aetrix verify that CY7C25702KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C25702KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25702KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C25702KV18-400BZC?

All CY7C25702KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25702KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C25702KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C25702KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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