Cypress Semiconductor Corp CY7C25702KV18-450BZC

Overview

CY7C25702KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 450 MHz maximum clock frequency, 2.5-cycle read latency (when DOFF = HIGH), and on-die termination (ODT) for DQ, BWS, and K/K inputs. It operates at core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and is used in high-bandwidth networking line cards requiring burst-aligned dual-word data delivery.

For engineers reviewing the CY7C25702KV18 datasheet, CY7C25702KV18 pinout, CY7C25702KV18 application, or CY7C25702KV18 equivalent, key selection criteria include DDR II+ timing compliance, echo-clock–synchronized data capture, ODT configuration via ZQ/ODT pins, and FBGA-165 package compatibility with high-density memory subsystem layouts.

Technical Context

This device implements a synchronous, pipelined burst SRAM architecture with dual-edge DDR interface: data is latched on rising edges of both K and K clocks, and output data is driven on both edges with precise alignment to echo clocks CQ/CQ. The internal 2M × 36 array is split into two 1M × 36 banks, enabling interleaved access and supporting depth expansion without wait states.

Read latency is configurable-2.5 cycles when DOFF is HIGH (DDR II+ mode), or 1 cycle when DOFF is LOW (DDR I–compatible mode). All synchronous inputs pass through K-controlled registers; outputs are registered to both K and K, and QVLD provides edge-aligned validity indication synchronized to CQ/CQ.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with CY7C25682KV18-450BZC, this part offers wider 36-bit data path and simplified byte-write granularity (four BWS lines), while AS7C3256PFS-15JCIN lacks DDR, ODT, and echo clocks entirely-making it incompatible for high-speed data-path applications requiring sub-2-cycle latency and signal integrity features.

Availability

CY7C25702KV18-450BZC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and test equipment memory subsystems requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C25702KV18-450BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C25702KV18 belongs to the QDR II+ SRAM product line, designed specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure where burst-aligned DDR timing and on-die signal integrity features are critical.

FAQ

What is the function of the DOFF pin on CY7C25702KV18?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This pin is sampled at power-up and latched, allowing system-level selection of timing behavior without firmware changes. It does not affect write timing or burst length.

How does on-die termination (ODT) work on CY7C25702KV18?

ODT is enabled via the ODT pin and calibrated using the external ZQ resistor (typically 240 Ω to GND). When ODT is active, it applies programmable termination to DQ[35:0], BWS[3:0], and K/K inputs, matching line impedance to reduce reflections. Two resistance ranges are selectable: LOW (RQ/3.33) or HIGH (RQ/1.66), determined by ODT pin state at power-up.

Can CY7C25702KV18 be used in depth-expanded configurations?

Yes-depth expansion is supported using LD and R/W signals across multiple devices sharing K/K and CQ/CQ. Output tri-state is automatically controlled on K rising edge after read completion, enabling seamless handoff between devices without wait states. Address decoding must distribute unique A[19:0] subsets, and all devices must use identical DOFF and ODT settings.

What is the purpose of the CQ and CQ echo clocks?

CQ and CQ are free-running, K-synchronized output clocks provided to simplify external data capture. They replicate the phase and duty cycle of K/K with minimal skew, allowing FPGA or ASIC receivers to latch DQ[35:0] on CQ rising edges instead of reconstructing timing from K/K. QVLD is edge-aligned to CQ/CQ, confirming data validity without additional timing margins.