Cypress Semiconductor Corp CY7C25702KV18-500BZC
- Part No.:
- CY7C25702KV18-500BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C25702KV18-500BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:273
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Product details
Overview
CY7C25702KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 550 MHz clock support, 2.5-cycle read latency (DOFF = HIGH), on-die termination (ODT) for D[35:0]/BWS[3:0]/K/K, and HSTL I/O compatible with 1.4–1.8 V VDDQ. It serves as high-bandwidth buffer memory in network packet processors requiring precise DDR timing and echo-clock–synchronized data capture.
For engineers reviewing the CY7C25702KV18 datasheet, CY7C25702KV18 pinout, CY7C25702KV18 application, or CY7C25702KV18 equivalent, key selection criteria include burst depth (2-word), ODT configuration range (RQ/1.66 or RQ/3.33), QVLD timing alignment with CQ/CQ, and compatibility with 550 MHz K/K differential clocking in depth-expanded SRAM stacks.
Technical Context
This device implements a synchronous pipelined architecture where all address, control, and data signals are registered on rising edges of K (positive) and K (negative) clocks. Read operations initiate on K edge, deliver two sequential 36-bit words on alternating K/K edges, and assert QVLD edge-aligned with CQ/CQ to indicate valid output windows.
The integrated PLL ensures accurate data placement relative to echo clocks, while ODT supports programmable termination impedance via ZQ resistor and ODT pin state-enabling elimination of external resistors for D[35:0], BWS[3:0], and K/K inputs without signal integrity compromise at 1100 MT/s.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 72 Mbit, 2M × 36 - enables single-device replacement of dual 36-bit QDR II devices in bandwidth-constrained systems |
| Max Clock Frequency | 550 MHz - supports 1100 MT/s DDR data rate with deterministic setup/hold margins under JEDEC HSTL Class I |
| Read Latency | 2.5 cycles (DOFF = HIGH) - provides optimal balance between access speed and timing margin for deep-pipeline SoCs |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.8 V - allows interoperability with both 1.5 V and 1.8 V memory subsystems |
| ODT Support | Configurable for D[35:0], BWS[3:0], K/K - eliminates 24+ external termination resistors, reducing PCB layer count and routing complexity |
| Output Timing Reference | CQ/CQ echo clocks - enable source-synchronous capture without per-pin deskew, simplifying FPGA interface design |
| QVLD Function | Edge-aligned with CQ/CQ - provides unambiguous, jitter-tolerant indication of valid data window for latch control logic |
Pinout & Package
Package: 165-ball FBGA (13 mm × 15 mm × 1.4 mm), RoHS-compliant, ball pitch 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with QVLD synchronization |
| BWS[3:0] | Byte write select inputs | Active-low controls for D[8:0]/D[17:9]/D[26:18]/D[35:27]; enables partial-word writes without read-modify-write overhead |
| K / K | Differential clock inputs | Rising edges define all synchronous timing; K used for address/control registration, both K/K used for data capture/driving |
| CQ / CQ | Echo clock outputs | Free-running, K-synchronized clocks; provide deterministic source-synchronous timing reference for external capture logic |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ rising edges; signals exact 36-bit word validity window for latch enable generation |
| ODT | On-die termination control | Selects ODT range (LOW = RQ/3.33; HIGH = RQ/1.66); floating defaults to high range; configures termination for all supported inputs |
| ZQ | Impedance calibration reference | Connects to precision 240 Ω resistor to ground; calibrates internal ODT driver strength across voltage/temperature |
| LD | Load strobe input | Latched on K rising edge; defines start of bus cycle including address and R/W direction; initiates 2-word burst sequence |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs, lowering EMI and system-level address routing complexity |
| Programmable ODT with ZQ calibration | Eliminates 28 external 33–50 Ω resistors, saving >12 mm² PCB area and enabling compact 10-layer router designs |
| Edge-aligned QVLD with echo clocks | Removes need for external delay-locked loops or phase interpolators in FPGA-based memory controllers |
| DOFF-selectable latency mode | Switches between 2.5-cycle (DDR II+) and 1-cycle (DDR I) read latency via single pin-supports legacy timing migration paths |
| HSTL Class I I/O with variable drive | Meets JEDEC JESD8-15A specifications across temperature; supports 1.4 V VDDQ operation without signal degradation |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches with <100 ns latency budget. IC Role / Device Role / Timing Role: High-speed burst-access buffer interfacing directly to SERDES MAC logic via source-synchronous CQ/QVLD timing. Use Value: 2.5-cycle latency + echo clocks ensure deterministic 550 MHz read response without FIFO staging or clock domain crossing logic. |
Use Scenario: Depth-expanded memory bank in 10G/40G optical transport line cards requiring sustained 8.8 GB/s bandwidth. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing burst-aligned 36-bit words to DSP co-processors with zero wait-state interleaving. Use Value: ODT eliminates termination stubs across 16+ parallel devices, maintaining signal integrity at 1100 MT/s across 12-inch backplane traces. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
|
Use Scenario: Real-time channel estimation and precoding coefficient storage in LTE-A massive MIMO base stations. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory mapped to ARM Cortex-A15 cache-coherent interconnect via AXI4 interface. Use Value: DOFF pin enables runtime switch to 1-cycle latency during control-plane bursts, improving interrupt response time by 2.5 cycles. |
Use Scenario: High-fidelity waveform pattern generation in automated test equipment requiring glitch-free 550 MHz vector replay. IC Role / Device Role / Timing Role: Burst-mode pattern store synchronized to instrument sampling clock using CQ-driven QVLD strobes. Use Value: QVLD edge alignment with CQ reduces setup uncertainty to ±0.15 ns, enabling sub-picosecond timing resolution in ATE systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C25682KV18 | Same architecture, 4M × 18 organization (72 Mbit), 18-bit data bus, identical timing and pinout except DQ/BWS count | Used where 18-bit datapath matches existing bus width; requires two devices for 36-bit width vs. single CY7C25702KV18 | Select when board layout already accommodates 18-bit interface or when lower per-device cost outweighs assembly complexity |
| AS7C362000B-15JIN | Asynchronous 36-Mbit SRAM (2M × 18), no DDR, no ODT, no echo clocks, 15 ns access, parallel address bus | Applicable only in non-burst, low-frequency control-plane buffers; cannot replace in data-path pipelines | Consider only for legacy upgrades where DDR timing, bandwidth, or signal integrity requirements are absent |
Compared with CY7C25682KV18, CY7C25702KV18 delivers full 36-bit width in one package-reducing interconnect count and skew-while AS7C362000B-15JIN lacks DDR timing, ODT, and echo clocks entirely, making it unsuitable for high-speed pipeline applications.
Availability
CY7C25702KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C25702KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with focus on signal integrity and timing-critical systems.
CY7C25702KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfaces in packet-switched infrastructure and real-time signal processing platforms.
FAQ
What is the function of the DOFF pin?
The DOFF (Double-Off) pin selects read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This pin is sampled at power-up and latched synchronously to K, enabling runtime latency adaptation without reset.
How does ODT configuration interact with the ZQ pin?
ZQ connects to a precision 240 Ω resistor to ground and calibrates internal ODT driver strength. ODT pin state selects the calibration range: LOW enables RQ/3.33 (175–350 Ω), HIGH enables RQ/1.66 (175–250 Ω). The calibrated value applies to D[35:0], BWS[3:0], and K/K inputs simultaneously.
Can CY7C25702KV18 be used in depth-expanded configurations?
Yes-the device supports seamless depth expansion via shared K/K clocks and automatic tri-state control on deselection. When one device completes its read burst, its outputs tri-state on the next K rising edge, allowing immediate access to the next device without wait states or external bus arbitration logic.
What is the timing relationship between QVLD and CQ/CQ?
QVLD is edge-aligned with both CQ and CQ rising edges, with propagation delay matching within ±0.05 ns. This alignment ensures that QVLD assertion precisely coincides with the center of the valid data window established by CQ/CQ, enabling reliable latch enable generation in FPGA or ASIC capture logic.
CY7C25702KV18-500BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 2M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 500 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C25702KV18-500BZC FAQ
1.How can I place an order for CY7C25702KV18-500BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C25702KV18-500BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C25702KV18-500BZC reliable?
The price and inventory of CY7C25702KV18-500BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C25702KV18-500BZC is usually 5 days.
3.What payment methods are accepted for CY7C25702KV18-500BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C25702KV18-500BZC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C25702KV18-500BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C25702KV18-500BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C25702KV18-500BZC?
For technical support, including CY7C25702KV18-500BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C25702KV18-500BZC requirements.
6.How does Aetrix verify that CY7C25702KV18-500BZC is sourced from the original manufacturer or authorized distributors?
All CY7C25702KV18-500BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C25702KV18-500BZC meets industry standards.
7.What is the process for return or replacement of CY7C25702KV18-500BZC?
All CY7C25702KV18-500BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C25702KV18-500BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C25702KV18-500BZC part is unused and in its original packaging.
Return procedure for CY7C25702KV18-500BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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