Cypress Semiconductor Corp CY7C25702KV18-550BZXC

Overview

CY7C25702KV18-550BZXC from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 550 MHz clock frequency, 2.5-cycle read latency (DOFF = HIGH), and on-die termination (ODT) for DQ, BWS, and K/K inputs. It delivers 1100 MT/s data throughput via double-data-rate interface and is used in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C25702KV18-550BZXC datasheet, CY7C25702KV18-550BZXC pinout, CY7C25702KV18-550BZXC application, or CY7C25702KV18-550BZXC equivalent, key selection considerations include its 2.5-cycle vs. 1-cycle configurable read latency, HSTL I/O compatibility with 1.4–1.8 V VDDQ, echo-clock–based data capture (CQ/CQ), QVLD timing alignment, and 165-ball FBGA (13 × 15 × 1.4 mm) package constraints.

Technical Context

This device implements a synchronous burst SRAM core with dual-edge DDR interface logic, using K and K clocks for input sampling and output driving. All address, control (R/W, LD, BWS[3:0]), and data (DQ[35:0]) signals are registered on rising edges of K or K - with address/control latched on K only, and write data sampled on both K and K.

The internal architecture supports two-word burst reads/writes per access, with tightly aligned echo clocks (CQ/CQ) and QVLD to eliminate external strobes. Its PLL ensures precise data placement, while ODT configuration (via ODT pin and ZQ resistor) enables impedance-matched signaling without external terminations on DQ, BWS, and clock inputs.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C25682KV18-550BZXC, this part offers identical speed and feature set but doubles data width at half the depth - favoring bandwidth-critical applications over address-space depth. The AS7C3256A lacks DDR, ODT, and burst capability entirely, making it unsuitable for any design relying on 1100 MT/s throughput or echo-clock–based timing.

Availability

CY7C25702KV18-550BZXC is available at Aetrix Electronics and suitable for networking packet buffers, FPGA co-processor caches, and telecom baseband memory requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C25702KV18-550BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with focus on signal integrity and timing precision.

CY7C25702KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA- and ASIC-based infrastructure equipment where DDR SDRAM latency and refresh overhead are unacceptable.

FAQ

What is the function of the DOFF pin on CY7C25702KV18-550BZXC?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to DDR I mode with 1-cycle latency. This pin is sampled at power-up and remains static during operation - it does not support dynamic switching between modes.

How does the ODT feature work, and what external components does it replace?

ODT uses an internal resistor network configured by the ODT pin and calibrated against an external ZQ resistor (connected to ZQ pin) to terminate DQ[35:0], BWS[3:0], and K/K inputs. It replaces up to 36 discrete 25–50 Ω series or parallel termination resistors, eliminating associated PCB space, routing complexity, and signal integrity tuning effort.

Can CY7C25702KV18-550BZXC be used with a 1.5 V VDDQ supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V. HSTL Class I input thresholds and variable-drive output buffers are designed to operate correctly across this range, enabling interoperability with 1.5 V FPGA I/O banks without level shifters or voltage translators.

What is the purpose of the CQ and CQ echo clocks, and how do they differ from K and K?

CQ and CQ are free-running, K-synchronized output clocks provided to simplify data capture timing. Unlike K/K (which are differential inputs controlling internal registers), CQ/CQ are single-ended outputs aligned to read data edges - they serve as system-level strobes replacing external DQS, eliminating skew calibration and allowing deterministic setup/hold margins at 550 MHz.