Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C2570KV18-450BZC

Part No.:
CY7C2570KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2570KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:528

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C2570KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with DDR II+ architecture, configured as 2M × 36-bit, supporting 450 MHz operation (2.2 ns clock period), 2.5-cycle read latency, and on-die termination (ODT) for D[x:0], BWS[x:0], and K/K inputs. It delivers 1100 MT/s data throughput in networking packet buffers requiring deterministic low-latency burst access.

For engineers reviewing the CY7C2570KV18 datasheet, CY7C2570KV18 pinout, CY7C2570KV18 application, or CY7C2570KV18 equivalent, key selection criteria include its 2M × 36 organization, HSTL I/O compatibility with 1.4–1.8 V VDDQ, echo clock (CQ/CQ) timing alignment, QVLD data-valid signaling, and FBGA-165 package thermal and routing constraints.

Technical Context

This device implements a synchronous pipelined SRAM core with dual-edge DDR II+ interface: addresses latched on alternate rising edges of K/K clocks, write data registered on both K and K rising edges, and read data driven on both K and K rising edges. It uses a PLL for precise data placement and supports programmable ODT impedance selection via the ODT pin tied to ZQ reference resistor.

The CY7C2570KV18 operates with two distinct latency modes-2.5-cycle read latency when DOFF = HIGH (DDR II+ mode) or 1-cycle latency when DOFF = LOW (DDR I–compatible mode). Its 36-bit data bus is managed by four active-low byte write selects (BWS[3:0]), each controlling a 9-bit segment, enabling granular partial writes without read-modify-write cycles.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization72 Mbit total, 2M × 36-bit configuration - supports wide-data-path buffering in switch fabric line cards.
Max Clock Frequency450 MHz - enables 900 MT/s sustained bandwidth with 2-word burst transfers.
Read Latency2.5 clock cycles (DOFF = HIGH) - guarantees deterministic timing for pipeline-synchronized control logic.
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - compatible with both 1.5 V and 1.8 V system I/O rails without level shifters.
On-Die TerminationSupported on D[35:0], BWS[3:0], K/K - eliminates 72 external 50 Ω resistors, reducing PCB area and signal integrity risk.
Package165-ball FBGA (13 mm × 15 mm × 1.4 mm) - standard footprint for high-density memory modules with thermal pad exposure.
Core SupplyVDD = 1.8 V ± 0.1 V - tightly regulated core voltage required for stable 450 MHz operation.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 0.8 mm ball pitch, 1.4 mm height, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
DQ[35:0]Synchronous bidirectional data bus36-bit DDR data path; sampled on K/K rising edges for writes, driven on K/K rising edges for reads with CQ/CQ edge alignment.
BWS[3:0]Active-low byte write selectEach controls 9-bit segment (e.g., BWS0 → D[8:0]); enables partial writes without bus contention or RMW overhead.
K / KDifferential input clocksPrimary timing references; all synchronous inputs latched on K rising edges, outputs registered on K/K edges for DDR timing closure.
CQ / CQOutput echo clocksPhase-matched copies of K/K; simplify high-speed data capture at receiver by eliminating skew-sensitive strobe routing.
QVLDValid data indicatorAsserted synchronously with first valid data word on DQ bus; used by FPGA/ASIC logic to gate latch enable without fixed delay assumptions.
ODTOn-die termination controlSelects ODT resistance range (LOW → ~175–350 Ω per pin) based on ZQ calibration resistor; reduces stub reflections on parallel buses.
DOFFLatency mode selectHIGH enables 2.5-cycle DDR II+ latency; LOW reverts to 1-cycle DDR I timing - allows firmware-level latency tuning.
ZQImpedance calibration referenceConnected to external 240 Ω ±1% resistor; calibrates internal ODT and output driver impedances during power-up initialization.

Key Features

FeatureDesign Value
2-word burst architectureHalves address bus toggle rate vs. single-word access - reduces routing congestion and timing margin pressure on wide-bus systems.
Programmable ODT with ZQ calibrationEliminates 76 external termination resistors (36 DQ + 4 BWS + 2 K/K + 2 CQ/CQ + 1 ODT + 1 ZQ) - cuts BOM cost and improves signal integrity at 450 MHz.
Edge-aligned QVLD outputRemoves need for fixed-delay sampling logic in receiving ASIC/FPGA - enables cycle-accurate data capture without manual timing closure.
Dual latency mode (DOFF-selectable)Allows same hardware to support legacy DDR I timing (1-cycle) or optimized DDR II+ timing (2.5-cycle) - simplifies platform reuse across generations.
HSTL Class I inputs / variable-drive outputsMeets JEDEC JESD8-15A for 1.5/1.8 V systems - ensures interoperability with Stratix IV, Virtex-6, and similar high-speed FPGAs without external termination.

Applications

Packet Buffer in L2/L3 SwitchesTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switching ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to switch fabric controller using 36-bit DDR II+ bus and echo clocks.

Use Value: 2.5-cycle latency and QVLD signaling enable deterministic header processing within 3 clock cycles, avoiding pipeline stalls in cut-through forwarding paths.

Use Scenario: Frame buffering in CPRI/OBSAI-based wireless baseband units requiring synchronized multi-channel data storage.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as shared memory between multiple DSP cores and framer ICs, clocked from common 450 MHz reference.

Use Value: On-die termination and HSTL I/O eliminate board-level termination networks, reducing layout complexity and improving jitter margin for 1100 MT/s DDR links.

High-Speed Test Equipment MemoryIndustrial Real-Time Controller Cache

Use Scenario: Capturing high-resolution waveform samples from multi-GHz ADCs in automated test equipment with real-time pattern analysis.

IC Role / Device Role / Timing Role: Burst-access memory staging raw samples before FPGA-based FFT or compression, leveraging 2-word burst to minimize address transitions.

Use Value: 450 MHz clock and 2.5-cycle latency allow sub-6 ns access time per 72-bit sample, meeting tight acquisition window requirements in 10 GS/s digitizers.

Use Scenario: Deterministic instruction/data cache for safety-critical motion controllers requiring guaranteed worst-case execution time (WCET).

IC Role / Device Role / Timing Role: Tightly coupled memory mapped into processor's AXI bus, accessed via synchronous pipelined reads with known 2.5-cycle latency.

Use Value: DOFF pin allows runtime switching to 1-cycle latency mode during critical control loops, reducing interrupt response jitter by up to 2.5 clock cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C2568KV184M × 18 organization, same 450 MHz speed and DDR II+ architecture but half the data width and double the depth.Better suited for 18-bit datapath systems (e.g., legacy DSP interfaces) where depth > width is prioritized over burst bandwidth.Select when system bus width is 18-bit and deeper addressing (4M) is required over wider parallelism.
AS7C362000B-15JIN2M × 36 QDR-IV SRAM, 15 ns access, asynchronous interface, no ODT or echo clocks.Used in non-DDR systems requiring simple address/data multiplexing and lower power, not high-speed DDR timing-critical designs.Choose only if DDR timing closure is impractical and 15 ns random access suffices - not a drop-in replacement.

Compared with CY7C2568KV18, CY7C2570KV18 provides higher burst bandwidth (36-bit vs. 18-bit) at identical latency and clock rate; versus AS7C362000B-15JIN, it trades asynchronous simplicity for deterministic DDR timing, echo-clock synchronization, and integrated termination - essential for 450 MHz system-level signal integrity.

Availability

CY7C2570KV18 is available at Aetrix Electronics and suitable for networking packet buffers, telecom line card memory, high-speed test equipment memory, and industrial real-time controller cache requiring stable component supply across extended product lifecycles.

Supply support for CY7C2570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with emphasis on signal integrity and timing precision.

The CY7C2570KV18 belongs to Cypress' DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where burst efficiency, ODT integration, and echo-clock timing alignment are critical.

FAQ

What is the function of the DOFF pin on CY7C2570KV18?

The DOFF (Double-Off) pin selects read latency mode: when asserted HIGH, it enables 2.5-cycle DDR II+ latency; when LOW, it configures the device for 1-cycle DDR I–compatible timing. This pin is sampled at power-up and remains static during operation - it is not dynamically switchable mid-operation. The mode affects internal pipeline staging but does not alter pinout, voltage, or clocking requirements.

How does the ZQ pin calibrate on-die termination?

The ZQ pin connects to an external 240 Ω ±1% resistor to ground. During power-up initialization, the device measures this reference to calibrate internal ODT resistance values and output driver strengths. Calibration occurs once per power cycle and adjusts all ODT-enabled pins (DQ, BWS, K/K) to match the target impedance. No periodic recalibration is required under stable thermal conditions.

Can CY7C2570KV18 operate with only one clock (K) instead of differential K/K?

No - the CY7C2570KV18 requires both K and K inputs for proper DDR II+ operation. The architecture relies on complementary clock edges to register write data and drive read data. Driving K only or shorting K/K violates timing specifications and causes undefined behavior. External clock generators must provide true differential LVDS- or HSTL-compatible K/K pairs with matched trace lengths.

What is the purpose of the QVLD signal and how is it timed?

QVLD (Valid Output Indicator) signals when read data on DQ[35:0] is valid and stable. It is edge-aligned with the CQ and CQ echo clocks - asserted coincident with the first rising edge of CQ that corresponds to valid data. This eliminates setup/hold uncertainty at the receiver, allowing latch enable generation directly from QVLD without fixed delay circuits or PLL-based deskew.

CY7C2570KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2570KV18-450BZC FAQ

1.How can I place an order for CY7C2570KV18-450BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2570KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2570KV18-450BZC reliable?

The price and inventory of CY7C2570KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2570KV18-450BZC is usually 5 days.

3.What payment methods are accepted for CY7C2570KV18-450BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2570KV18-450BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2570KV18-450BZC?

CY7C2570KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2570KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2570KV18-450BZC?

For technical support, including CY7C2570KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2570KV18-450BZC requirements.

6.How does Aetrix verify that CY7C2570KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C2570KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2570KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C2570KV18-450BZC?

All CY7C2570KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2570KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2570KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C2570KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C2570KV18-450BZC Tags

  • CY7C2570KV18-450BZC
  • CY7C2570KV18-450BZC PDF
  • CY7C2570KV18-450BZC Datasheet
  • CY7C2570KV18-450BZC Specifications
  • CY7C2570KV18-450BZC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C2570KV18-450BZC
  • Buy CY7C2570KV18-450BZC
  • CY7C2570KV18-450BZC Price
  • CY7C2570KV18-450BZC Distributor
  • CY7C2570KV18-450BZC Supplier
  • CY7C2570KV18-450BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER