Cypress Semiconductor Corp CY7C2570XV18-600BZXC

Overview

CY7C2570XV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ Xtreme SRAM with 2 M × 36 organization, 2.5-cycle read latency (DOFF = HIGH), 600 MHz clock operation, and on-die termination (ODT) for DQ/BWS/K/K inputs-designed for high-bandwidth buffering in network packet processors and telecom line cards.

For engineers reviewing the CY7C2570XV18 datasheet, CY7C2570XV18 pinout, CY7C2570XV18 application, or CY7C2570XV18 equivalent, key selection criteria include DDR II+ burst timing, echo-clock–synchronized data capture, HSTL I/O compatibility, and ODT configuration via ZQ/ODT pins under 1.8 V core / 1.5 V I/O supply conditions.

Technical Context

The device implements a two-word burst architecture with address latching on alternate rising edges of complementary K/K clocks, enabling 1266 MT/s effective data rate at 600 MHz input clock. Read data is driven synchronously on both K and K rising edges, with QVLD edge-aligned to CQ/CQ for precise strobing.

It integrates a PLL for accurate data placement, supports programmable ODT ranges (RQ/3.33 or RQ/1.66) via ODT pin state, and uses synchronous self-timed write circuitry with byte-write select (BWS[3:0]) for granular 9-bit writes-operating in either DDR I mode (1-cycle latency, DOFF = LOW) or DDR II+ mode (2.5-cycle latency, DOFF = HIGH).

Key Specifications

Pinout & Package

Package: 165-ball FBGA (13 mm × 15 mm × 1.4 mm), RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C2570XV18 delivers 2× higher effective bandwidth via DDR, eliminates external termination, and provides deterministic latency control-making it essential for systems requiring sub-nanosecond timing alignment and >1 Gbps sustained throughput.

Availability

CY7C2570XV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply, long-lifecycle support, and guaranteed Pb-free FBGA sourcing.

Supply support for CY7C2570XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

CY7C2570XV18 belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where echo-clock–synchronized data capture and on-die termination reduce system-level timing margin risk.

FAQ

What is the function of the DOFF pin on CY7C2570XV18?

The DOFF (DDR Off) pin selects the device's read latency mode: when asserted HIGH, it enables DDR II+ operation with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to DDR I mode with 1-cycle latency. This pin is sampled at power-up and remains static during operation-no dynamic switching is supported.

How does on-die termination (ODT) work on CY7C2570XV18?

ODT is enabled only during write operations and applies to DQ[35:0], BWS[3:0], and K/K inputs. Its resistance value is selected at power-up using the ODT pin state (LOW = low range, HIGH/floating = high range) and calibrated against the ZQ pin's external resistor. ODT is automatically disabled during read cycles to avoid loading the data bus.

Can CY7C2570XV18 operate with a 1.5 V I/O supply?

Yes-CY7C2570XV18 supports VDDQ from 1.4 V to 1.6 V, fully covering 1.5 V nominal HSTL I/O operation. The device's variable-drive HSTL output buffers are calibrated via the ZQ pin to maintain impedance matching across this range, ensuring signal integrity without external termination.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-locked outputs synchronized to the K clock. They provide a system-level timing reference aligned with data output edges, allowing external logic (e.g., FPGA capture registers) to sample DQ[35:0] with minimal skew-even across multiple SRAM devices-without needing individual board-trace-matched strobes.