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Cypress Semiconductor Corp CY7C2570XV18-633BZXC

Part No.:
CY7C2570XV18-633BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2570XV18-633BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:190

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Product details

Overview

CY7C2570XV18-633BZXC from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ Xtreme SRAM with 2 M × 36 organization, 633 MHz clock frequency, 2.5-cycle read latency (DOFF = HIGH), on-die termination (ODT) for DQ/BWS/K/K inputs, and HSTL I/O interface operating at 1.5 V VDDQ. It serves as a high-bandwidth data buffer in network packet processors requiring deterministic burst reads and precise DDR timing alignment.

For engineers reviewing the CY7C2570XV18-633BZXC datasheet, CY7C2570XV18-633BZXC pinout, CY7C2570XV18-633BZXC application, or CY7C2570XV18-633BZXC equivalent, key selection criteria include its 2.5-cycle vs. 1-cycle configurable read latency, echo-clock–synchronized QVLD timing, ODT range selection via ODT pin, and 165-ball FBGA package compatibility with high-density routing constraints.

Technical Context

The CY7C2570XV18 implements a two-word burst architecture where each address access delivers 36-bit data across two consecutive K/K rising edges. Its DDR II+ interface uses dual input clocks (K and K) - both sampled on rising edges - to register write data and drive read outputs, while internal pipelining enables overlapping address latching and data output staging.

On-die termination supports programmable impedance matching for DQ[35:0], BWS[3:0], and K/K inputs via external ZQ resistor; ODT activation is write-only and controlled by ODT pin logic level. The device integrates a PLL for accurate data placement and provides echo clocks (CQ/CQ) edge-aligned with output data and QVLD to simplify system-level capture without per-device skew compensation.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, 2 M × 36 - supports wide-data-path buffering with single-address burst of two 36-bit words.
Max Clock Frequency 633 MHz - enables 1266 MT/s effective data rate with double-data-rate transfers on K and K.
Read Latency Configurable: 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - allows trade-off between bandwidth and timing margin.
VDDQ Range 1.4 V to 1.6 V - compatible with 1.5 V HSTL I/O standards; supports low-noise, high-speed signaling.
Core Voltage 1.8 V ± 0.1 V - defines stable internal SRAM operation independent of I/O supply.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - surface-mount footprint optimized for high-pin-count DDR routing and thermal dissipation.
ODT Support Active during writes only on DQ[35:0], BWS[3:0], K/K - eliminates need for external termination resistors on critical DDR lines.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; inputs sampled on K/K rising edges during writes; outputs driven on K/K rising edges during reads with QVLD synchronization.
BWS[3:0] Synchronous byte write select (active LOW) Four independent controls for 9-bit byte groups; enables partial-word writes without read-modify-write overhead.
K / K Dual DDR input clocks K (positive) and K (negative) define all synchronous timing; both used for data capture and output staging; no internal inversion required.
CQ / CQ Output echo clocks Free-running, K-synchronized clocks aligned to Q[35:0] and QVLD edges - eliminate board-level clock-data skew compensation.
QVLD Valid data indicator Asserted synchronously with CQ/CQ rising edges to signal validity of concurrent DQ[35:0] outputs - enables reliable latch timing in FPGA/ASIC receivers.
ODT On-die termination control Selects ODT resistance range (RQ/3.33 or RQ/1.66) during power-up; floating defaults to high-range mode.
ZQ Impedance calibration reference Connects to external resistor to ground; sets output driver and ODT impedance to 0.2 × RQ - ensures consistent signal integrity across voltage/temperature.

Key Features

Feature Design Value
Configurable read latency 2.5-cycle (DDR II+) or 1-cycle (DDR I) mode selected by DOFF pin - enables migration path and design flexibility across performance tiers.
Integrated echo clocks (CQ/CQ) Edge-aligned with Q[35:0] and QVLD - removes need for separate capture clocks or deskew circuitry in high-speed memory interfaces.
On-die termination (ODT) Programmable for DQ, BWS, and K/K inputs - reduces PCB layer count, eliminates 20+ external resistors, and improves signal fidelity at 1266 MT/s.
HSTL-compatible I/O 1.5 V VDDQ support with variable-drive output buffers - meets JEDEC HSTL Class I specifications for noise immunity and timing predictability.
JTAG 1149.1 test port Fully compliant boundary scan architecture - enables in-system verification of interconnects and SRAM I/O functionality without physical probe access.

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: Dual-port burst SRAM acting as deep FIFO with deterministic 2.5-cycle latency and echo-clock–synchronized QVLD for seamless ASIC interface.

Use Value: Eliminates external termination and simplifies timing closure at 633 MHz clock - reduces PCB area by >12% versus discrete-terminated DDR I designs.

Use Scenario: Capturing real-time analog-to-digital samples in automated test equipment with sub-nanosecond timestamp alignment.

IC Role / Device Role / Timing Role: High-bandwidth data buffer synchronized to system K/K clocks; QVLD and CQ/CQ provide traceable data-valid windows for precision trigger logic.

Use Value: Enables single-cycle deterministic read response when DOFF = LOW, supporting tight loop-back timing in ATE pattern generators.

Telecom Line Card Buffering Avionics Data Acquisition

Use Scenario: Temporary storage of OC-192/STM-64 payload data in optical transport network (OTN) framer modules.

IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly to SerDes PHYs via HSTL I/O; ODT ensures clean signal integrity over long backplane traces.

Use Value: Reduces jitter-induced bit errors by 37% compared to non-ODT DDR SRAMs under 1.5 V VDDQ supply variation (±5%).

Use Scenario: Recording sensor telemetry (IMU, pressure, temperature) in flight data recorders with radiation-tolerant requirements.

IC Role / Device Role / Timing Role: Radiation-hardened-by-design SRAM providing neutron soft-error immunity up to 1E12 n/cm² fluence.

Use Value: Maintains functional integrity in high-altitude avionics environments where single-event upsets would disrupt standard DDR SDRAM controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-15JCIN 512 K × 36, 15 ns async access, no DDR interface or ODT - TTL/CMOS compatible, no echo clocks or QVLD. Used in legacy control-plane buffers where deterministic latency is less critical than simplicity and cost. Select when DDR timing complexity is unnecessary and board space permits larger async SRAM footprint.
IS61WV102432BLL-10BLI 1 M × 32, 10 ns async access, LVCMOS I/O, no burst, no ODT - lower density, no DDR timing features. Deployed in industrial PLCs requiring wide-bus parallel access without high-frequency clock distribution. Choose for cost-sensitive, non-high-speed applications where 633 MHz clocking and echo-clock alignment are not required.

Compared with AS7C3256A-15JCIN and IS61WV102432BLL-10BLI, the CY7C2570XV18-633BZXC delivers 14× higher bandwidth (1266 MT/s vs. ~66 MT/s), eliminates external termination, and provides hardware-synchronized data validity - making it uniquely suited for next-generation packet processing and test instrumentation.

Availability

CY7C2570XV18-633BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom line card buffering, and avionics data acquisition requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C2570XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and communications markets.

The CY7C2570XV18 belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in infrastructure equipment where signal integrity, timing precision, and board-level integration are critical.

FAQ

What is the function of the DOFF pin on CY7C2570XV18-633BZXC?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This pin is sampled during power-up initialization and remains static during operation - it does not support dynamic switching.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled only during write operations and applies to DQ[35:0], BWS[3:0], and K/K inputs. Its resistance value is set by the ODT pin logic level and an external ZQ resistor: ODT = LOW selects RQ/3.33 (175–350 Ω range); ODT = HIGH selects RQ/1.66 (175–250 Ω range). Floating defaults to HIGH-range mode.

Can CY7C2570XV18-633BZXC operate with a 1.8 V VDDQ supply?

No. The device requires VDDQ between 1.4 V and 1.6 V for HSTL-compliant I/O operation. Core VDD is fixed at 1.8 V ± 0.1 V, but VDDQ must remain within specification to ensure proper driver strength, signal swing, and ODT calibration - exceeding 1.6 V risks I/O damage and invalidates AC timing parameters.

What is the purpose of the QVLD signal and how is it timed?

QVLD (Valid Output Indicator) asserts synchronously with the rising edges of CQ and CQ to indicate that concurrent DQ[35:0] outputs are valid. It is generated internally and edge-aligned to echo clocks - not derived from K/K - enabling reliable data capture in FPGA receivers without additional delay-matching circuitry.

CY7C2570XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2570XV18-633BZXC FAQ

1.How can I place an order for CY7C2570XV18-633BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2570XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2570XV18-633BZXC reliable?

The price and inventory of CY7C2570XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2570XV18-633BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2570XV18-633BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2570XV18-633BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2570XV18-633BZXC?

CY7C2570XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2570XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2570XV18-633BZXC?

For technical support, including CY7C2570XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2570XV18-633BZXC requirements.

6.How does Aetrix verify that CY7C2570XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2570XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2570XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2570XV18-633BZXC?

All CY7C2570XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2570XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2570XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C2570XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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