Cypress Semiconductor Corp CY7C2644KV18-300BZXI

Overview

CY7C2644KV18-300BZXI from Infineon Technologies (formerly Cypress) is a radiation-hardened 144-Mbit QDR® II+ SRAM with 4M × 36 organization, 250 MHz clock frequency, 2.0-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR interfaces on both ports (500 MHz data rate), and RadStop™ technology for space-grade reliability in high-radiation environments such as satellite command/data handling systems.

For engineers reviewing the CY7C2644KV18-300BZXI datasheet, CY7C2644KV18-300BZXI pinout, CY7C2644KV18-300BZXI application, or CY7C2644KV18-300BZXI equivalent, key selection criteria include radiation tolerance (200 Krad total dose), dual-clock DDR timing precision, ODT support for D[35:0]/BWS[3:0]/K/K inputs, and CCGA-165 package compatibility with high-speed memory bus routing.

Technical Context

This device implements a true quad data rate architecture with independent read and write ports sharing a multiplexed address bus, enabling concurrent transactions without bus turnaround. Its PLL synchronizes echo clocks (CQ/CQ) to K/K for precise data capture at 500 MHz, while DOFF pin selects between 2.0-cycle (QDR II+) and 1.0-cycle (QDR I–compatible) read latency modes.

The SRAM uses HSTL Class I inputs and variable-drive HSTL outputs, operates at core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and integrates JTAG 1149.1 boundary scan for testability. Radiation hardening includes latchup immunity >120 MeV·cm²/mg at 125 °C and dose rate survivability >1.4 × 10¹⁰ rad(Si)/sec.

Key Specifications

Pinout & Package

Package: 165-ball Ceramic Column Grid Array (CCGA), 21 × 25 × 2.83 mm, RoHS-compliant, hermetically sealed for space-grade reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar radiation-tolerant high-speed SRAM applications.

Compared with IS61WV102432ALL-10BLI and MT48LC16M16A2P-6A:G, CY7C2644KV18-300BZXI uniquely delivers simultaneous radiation hardness, 500 MHz DDR bandwidth, and zero-refresh deterministic latency - making it irreplaceable in mission-critical space avionics where failure is not an option.

Availability

CY7C2644KV18-300BZXI is available at Aetrix Electronics and suitable for satellite command/data handling, deep-space probe telemetry buffering, and military avionics mission computers requiring stable component supply across extended production lifecycles.

Supply support for CY7C2644KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and high-reliability memory solutions.

This device belongs to Infineon's radiation-hardened QDR SRAM product line, engineered specifically for aerospace and defense applications demanding guaranteed operation under extreme ionizing radiation, thermal cycling, and long-term mission durability.

FAQ

What is the maximum operating temperature range for CY7C2644KV18-300BZXI?

The device is fully specified and qualified for operation from –55 °C to +125 °C ambient temperature. Electrical parameters including AC timing, DC leakage, and ODT impedance are guaranteed across this full military-grade range, with burn-in and screening performed per MIL-PRF-38535 Class V requirements.

Does CY7C2644KV18-300BZXI require external termination resistors?

No. The device integrates programmable on-die termination (ODT) for all D[35:0], BWS[3:0], and K/K inputs. When enabled via the ODT pin, internal resistors match standard HSTL-1 impedance (typically ~50 Ω), eliminating the need for external resistors and reducing PCB layer count and signal integrity risk.

How does the DOFF pin affect read latency and system timing?

When DOFF is high, the device operates in QDR II+ mode with 2.0-cycle read latency, optimizing burst throughput. When DOFF is low, it reverts to QDR I–compatible 1.0-cycle latency - useful for legacy system drop-in replacement. Both modes maintain identical clocking structure and DDR data rates; only the internal pipeline depth changes.

Is JTAG boundary scan supported, and what standards does it comply with?

Yes. The device implements IEEE 1149.1 (JTAG) compliant test access port with full boundary-scan architecture. It supports instruction register loading, data register scanning, and TAP controller state transitions per the standard - enabling automated solder joint inspection and interconnect testing on high-density CCGA assemblies.