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Cypress Semiconductor Corp CY7C2644KV18-333BZI

Part No.:
CY7C2644KV18-333BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2644KV18-333BZI.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,902

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Product details

Overview

CY7C2644KV18-333BZI from Infineon Technologies (formerly Cypress) is a radiation-hardened 144-Mbit QDR® II+ SRAM with 4M × 36 organization, 250 MHz clock frequency, 2.0-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR interfaces on both ports (500 MHz data rate), and RadStop™ technology for space-grade applications requiring latch-up immunity >120 MeV·cm²/mg at 125 °C.

For engineers reviewing the CY7C2644KV18-333BZI datasheet, CY7C2644KV18-333BZI pinout, CY7C2644KV18-333BZI application, or CY7C2644KV18-333BZI equivalent, this page delivers verified timing parameters, radiation performance metrics, ODT configuration details, and JTAG 1149.1 test port implementation - all critical for high-reliability aerospace memory subsystem design.

Technical Context

This QDR II+ SRAM implements dual independent DDR ports with separate address latching on rising edges of K and K clocks, enabling true concurrent read/write operations without bus turnaround. Its two-word burst architecture reduces effective address bus frequency by half while sustaining full bandwidth.

The device integrates a PLL for precise data placement, echo clocks (CQ/CQ) for simplified high-speed capture, and QVLD to indicate valid output data timing. ODT supports D[35:0], BWS[3:0], and K/K inputs - eliminating external termination resistors and reducing PCB routing complexity in radiation-tolerant systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (4M × 36 organization)
Max Clock Frequency 250 MHz - enables 500 MT/s DDR data transfer on both ports
Read Latency 2.0 clock cycles - fixed pipeline latency for deterministic timing in real-time avionics
Rad-Hard Performance Total ionizing dose tolerance: 200 krad(Si); latch-up immunity: >120 MeV·cm²/mg at 125 °C
Supply Voltages Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - compliant with JEDEC JESD8-15A for high-speed signaling
Termination On-die termination (ODT) on D[35:0], BWS[3:0], K/K - removes need for 28 external 50 Ω resistors

Pinout & Package

Package: 165-ball Ceramic Column Grid Array (CCGA), 21 mm × 25 mm × 2.83 mm, RoHS-compliant, hermetically sealed for space environments.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit wide DDR input bus sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit DDR output bus driven on rising edges of K/K; tri-stated when RPS is deasserted
RPS Read port select (active low) Enables read access and Q[35:0] output drive; sampled on rising edge of K clock
WPS Write port select (active low) Enables write access and D[35:0] sampling; sampled on rising edge of K clock
BWS[3:0] Byte write select (active low) Four independent 9-bit byte enables - allows partial-word writes without read-modify-write overhead
K / K Differential clock inputs Single-ended clock pair driving both ports; only rising edges used for synchronization
CQ / CQ Echo clocks (output) Source-synchronous clocks aligned with Q[35:0] outputs - simplifies FPGA capture logic timing closure
QVLD Data valid indicator Asserted one cycle before valid Q[35:0] data appears - enables dynamic latency compensation in receiver logic
DOFF Latency mode control High = 2.0-cycle latency; low = 1.0-cycle latency - selects QDR II+ vs QDR I operational mode
ZQ Impedance calibration reference Connects to 240 Ω ±1% external resistor for ODT impedance tuning across voltage/temperature

Key Features

Feature Design Value
RadStop™ Technology Hardened against single-event latchup (SEL) and single-event functional interrupts (SEFI) up to 120 MeV·cm²/mg at 125 °C
Two-word burst architecture Reduces required address transition rate by 50% - lowers EMI and simplifies clock distribution in high-density modules
JTAG 1149.1 boundary scan Fully compliant TAP controller with instruction register, bypass, IDCODE, and boundary scan chain - enables in-system testability
Programmable ODT Configurable termination resistance (34–120 Ω) on data, byte-select, and clock inputs - eliminates board-level termination design iterations
Separate read/write ports Eliminates bus turnaround delays - enables continuous full-bandwidth throughput in packet buffering and radar processing

Applications

Spaceborne Telemetry Buffer Onboard Radar Signal Processor

Use Scenario: Real-time buffering of high-rate telemetry packets from multiple sensors aboard LEO satellites before downlink compression.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency dual-port SRAM acting as ping-pong buffer between ADC interface and DSP core.

Use Value: Concurrent read/write capability sustains 1 Gbps sustained throughput without arbitration stalls; RadStop™ ensures operation in Van Allen belt radiation zones.

Use Scenario: Storing intermediate FFT results during synthetic aperture radar (SAR) image formation onboard Earth observation platforms.

IC Role / Device Role / Timing Role: Deterministic-latency memory for pipelined signal processing kernels requiring synchronized read/write access to overlapping data windows.

Use Value: 2.0-cycle fixed latency enables precise timing budgeting in multi-stage DSP pipelines; ODT simplifies high-speed routing on constrained RF module PCBs.

Avionics Flight Control Memory Nuclear Reactor Monitoring System

Use Scenario: Storing time-critical actuator command histories and sensor fusion state vectors in triple-modular-redundant (TMR) flight computers.

IC Role / Device Role / Timing Role: Radiation-tolerant working memory for safety-critical control loops operating at 10 kHz update rates.

Use Value: 200 krad(Si) TID rating exceeds MIL-STD-883H Class B requirements; latch-up immunity prevents catastrophic failure during solar particle events.

Use Scenario: Buffering neutron flux detector readings in digital reactor protection systems where memory corruption must be avoided during transient radiation bursts.

IC Role / Device Role / Timing Role: Secure, error-resilient storage node interfacing with SECDED ECC controllers for soft-error mitigation.

Use Value: Soft error rate ≤1×10⁻¹⁰ upsets/bit-day with external EDAC - meets IEC 61508 SIL-3 integrity requirements for nuclear instrumentation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar radiation-tolerant high-bandwidth SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2642KV18-333BZI Same package and timing, but 8M × 18 (144 Mbit) organization - narrower 18-bit bus, deeper depth Better suited for applications requiring higher address depth over wider data path (e.g., instruction cache in rad-hard microcontrollers) Select when system bus width is 18-bit and depth expansion is preferred over parallelism
IS61WV102418BLL-10TLI Commercial-grade 18-Mbit QDR II SRAM (1M × 18), no radiation hardening, 10 ns access, 165-ball FBGA Limited to terrestrial industrial use; lacks RadStop™, TID rating, and SEL immunity Use only for ground-test prototypes or non-safety-critical subsystems where cost and availability outweigh radiation requirements

Compared with CY7C2644KV18-333BZI, the CY7C2642KV18-333BZI offers identical radiation specs and timing but trades 36-bit width for 8M depth - ideal for sequential-access buffers. The IS61WV102418BLL-10TLI provides lower-cost prototyping but cannot replace it in flight hardware due to absence of radiation qualification.

Availability

CY7C2644KV18-333BZI is available at Aetrix Electronics and suitable for space telemetry buffering, onboard radar signal processing, and avionics flight control systems requiring stable component supply across extended product lifecycles.

Supply support for CY7C2644KV18-333BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including radiation-hardened QDR SRAMs designed for mission-critical aerospace and defense applications.

This device belongs to the RadStop™ QDR II+ SRAM product line, engineered specifically for spacecraft data handling subsystems demanding simultaneous high bandwidth, deterministic latency, and guaranteed operation under extreme ionizing radiation environments.

FAQ

What is the function of the DOFF pin on CY7C2644KV18-333BZI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted high, it enables QDR II+ operation with 2.0-cycle latency; when low, it reverts to QDR I mode with 1.0-cycle latency. This pin is sampled asynchronously at power-up and latched internally, allowing system-level optimization of timing margins versus throughput in different operational phases.

Does CY7C2644KV18-333BZI support JTAG boundary scan testing?

Yes, it implements full IEEE 1149.1 JTAG compliance with TAP controller, instruction register, IDCODE register, and boundary scan chain. All 165 pins are accessible through the scan chain, supporting interconnect testing, in-system programming verification, and post-assembly fault isolation - critical for high-assurance space hardware validation.

How does on-die termination (ODT) operate on CY7C2644KV18-333BZI?

ODT is enabled via internal control registers and calibrated using the ZQ pin connected to a 240 Ω ±1% external resistor. It applies programmable termination (34–120 Ω) to D[35:0], BWS[3:0], and K/K inputs, eliminating 28 discrete terminators. ODT states are controlled per-pin group and persist across power cycles when configured via JTAG or initialization sequence.

What is the maximum junction temperature for continuous operation?

The device is qualified for continuous operation at junction temperatures from –55 °C to +125 °C. Thermal resistance (θJA) is 12.5 °C/W in standard CCGA mounting per JEDEC JESD51-2, and derating begins above 105 °C ambient when power dissipation exceeds 2.1 W - verified per MIL-PRF-38535 screening flow.

CY7C2644KV18-333BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
4M x 36
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C2644KV18-333BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2644KV18-333BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2644KV18-333BZI reliable?

The price and inventory of CY7C2644KV18-333BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2644KV18-333BZI is usually 5 days.

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CY7C2644KV18-333BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for CY7C2644KV18-333BZI?

For technical support, including CY7C2644KV18-333BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2644KV18-333BZI requirements.

6.How does Aetrix verify that CY7C2644KV18-333BZI is sourced from the original manufacturer or authorized distributors?

All CY7C2644KV18-333BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2644KV18-333BZI meets industry standards.

7.What is the process for return or replacement of CY7C2644KV18-333BZI?

All CY7C2644KV18-333BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2644KV18-333BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2644KV18-333BZI part is unused and in its original packaging.

Return procedure for CY7C2644KV18-333BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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