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Cypress Semiconductor Corp CY7C2663KV18-450BZXC

Part No.:
CY7C2663KV18-450BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2663KV18-450BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:382

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Product details

Overview

CY7C2663KV18-450BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit QDR® II+ SRAM with 8M × 18 organization, 450 MHz maximum clock frequency, 2.5-cycle read latency, and on-die termination (ODT) supporting D[17:0], BWS[1:0], and K/K inputs. It operates at 1.8 V core supply and 1.4–1.8 V I/O supply, delivering 1100 MT/s DDR data rate across independent read/write ports for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C2663KV18-450BZXC datasheet, CY7C2663KV18-450BZXC pinout, CY7C2663KV18-450BZXC application, or CY7C2663KV18-450BZXC equivalent, this device is selected for deterministic low-latency memory access in packet buffering, switch fabric control planes, and FPGA co-processor interfaces where concurrent read/write throughput and signal integrity at 450 MHz are critical.

Technical Context

The CY7C2663KV18-450BZXC implements a true quad data rate architecture with physically separate read and write data paths, eliminating bus turnaround delays. Its four-word burst mode reduces address bus toggling while maintaining full data coherency across all ports.

It integrates a PLL for precise data placement, echo clocks (CQ/CQ) synchronized to K/K for simplified high-speed capture, and JTAG 1149.1 test access. ODT configuration is set at power-up via the ODT pin and ZQ resistor, enabling impedance matching without external terminators.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8M × 18 organization)
Max Clock Frequency 450 MHz - sets upper limit for system timing budget and determines achievable bandwidth
Read Latency 2.5 cycles - defines minimum delay between address assertion and first valid output word
Data Rate 1100 MT/s - achieved via DDR on both ports, doubling effective throughput per clock cycle
Supply Voltages VDD = 1.8 V ± 0.1 V; VDDQ = 1.4 V to 1.8 V - supports dual-voltage I/O interface with HSTL-compatible buffers
On-Die Termination Supported on D[17:0], BWS[1:0], K/K - eliminates need for 24+ external 50 Ω resistors, reducing PCB area and cost
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count, thermally demanding SRAMs

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous data input Latched on rising edges of K/K; carries 18-bit write data per burst segment
Q[17:0] Synchronous data output Drives 18-bit read data on rising edges of K/K; tri-stated when RPS deasserted
RPS Read port select Active-low signal sampled on K rising edge; initiates 4-word burst read sequence
WPS Write port select Active-low signal sampled on K rising edge; enables write operation and byte write selects
BWS[1:0] Byte write select Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes
K / K Differential clock inputs Positive/negative clocks driving all synchronous logic; only rising edges used for sampling
CQ / CQ Echo clocks Free-running outputs synchronized to K/K; used by external logic to latch Q[17:0] with zero skew
QVLD Valid data indicator Edge-aligned with CQ/CQ; asserts one cycle before first valid Q[17:0] word in burst
ODT On-die termination control Configures ODT range at power-up; HIGH selects ~105 Ω (RQ/1.66), LOW selects ~210 Ω (RQ/3.33)
ZQ Impedance calibration reference Connects to external precision resistor (175–350 Ω); sets output driver strength for Q/CQ pins

Key Features

Feature Design Value
Independent read/write ports Enables simultaneous access without arbitration delay-critical for real-time packet buffering in switches
Four-word burst architecture Reduces address bus frequency by 4× versus single-word mode, easing routing and timing closure
2.5-cycle read latency Guarantees first valid data within 5.56 ns at 450 MHz-enables tight loop timing in control-plane processors
HSTL I/O with variable drive Ensures clean signal integrity up to 1100 MT/s on FR4 backplanes with controlled-impedance traces
JTAG 1149.1 boundary scan Supports automated PCB test and interconnect verification without requiring functional memory access

Applications

High-Speed Network Switch Buffer FPGA-Based Protocol Accelerator

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switching ASICs with line-rate forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer between ingress parser and egress scheduler, synchronized to 450 MHz system clock.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling sustained 8.8 GB/s aggregate bandwidth (450 MHz × 18-bit × 2 ports).

Use Scenario: Offloading TCP/IP checksum, encryption, or packet classification tasks from host CPU using FPGA-accelerated datapath.

IC Role / Device Role / Timing Role: High-throughput memory co-processor interfacing directly to FPGA fabric via dedicated HSTL I/O banks.

Use Value: Four-word burst and echo clocks simplify FPGA timing closure, reducing logic utilization by 12–18% versus discrete DDR2 SDRAM interface.

Telecom Line Card Control Plane Real-Time Industrial Motion Controller

Use Scenario: Storing configuration tables, statistics counters, and session state in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Deterministic-access SRAM for microcontroller or ARM-based control processor managing multiple line interfaces.

Use Value: 2.5-cycle latency ensures sub-6 ns response time for interrupt-driven status updates, meeting ITU-T G.8261 jitter requirements.

Use Scenario: Coordinating multi-axis servo positioning in CNC machines with <1 µs motion update cycles.

IC Role / Device Role / Timing Role: Shared memory between real-time motion engine and safety monitor, accessed via isolated read/write ports.

Use Value: On-die termination eliminates external resistors on 18-bit data bus, improving noise margin in electrically noisy factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2663KV18-550BZXC Higher max clock (550 MHz), same 8M × 18 config, identical pinout and ODT support Requires tighter PCB layout and higher-power supply design; suitable only where >450 MHz bandwidth is mandatory Select only if system timing margin allows 550 MHz operation and thermal budget permits +150 mW typical current increase
AS7C331024B-15JIN Asynchronous 128-Mbit SRAM, no DDR/QDR architecture, no ODT, 15 ns access time, SOJ package Lacks concurrent read/write and burst capability; used in legacy control systems with relaxed timing Only viable for non-real-time, low-bandwidth upgrades where board space allows SOJ footprint and latency tolerance exceeds 15 ns

Compared with CY7C2663KV18-550BZXC, the -450BZXC offers lower power and relaxed timing margins; compared with AS7C331024B-15JIN, it delivers 4.9× higher effective bandwidth and deterministic latency but requires DDR-aware controller logic and FBGA assembly capability.

Availability

CY7C2663KV18-450BZXC is available at Aetrix Electronics and suitable for high-speed network switch buffers, FPGA-based protocol accelerators, telecom line card control planes, and real-time industrial motion controllers requiring stable component supply over extended production lifecycles.

Supply support for CY7C2663KV18-450BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-performance memory solutions.

This device belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory access in networking infrastructure and real-time embedded systems.

FAQ

What is the function of the DOFF pin on CY7C2663KV18-450BZXC?

The DOFF (Data Output Format) pin selects read latency mode: when asserted HIGH, it enables 2.5-cycle latency for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled during power-up initialization and remains static during normal operation.

Can CY7C2663KV18-450BZXC operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal. At 1.5 V, HSTL output drive strength is reduced versus 1.8 V, but all AC timing specifications-including tAC (access time) and tHZ (output hold)-remain guaranteed per datasheet Table 23 under 1.5 V conditions.

How is depth expansion implemented using RPS and WPS?

Depth expansion is achieved by connecting multiple CY7C2663KV18 devices in parallel with shared address, clock, and data buses, while assigning unique RPS/WPS signals to each device. Each RPS/WPS pair enables only one device per port, allowing logical memory extension beyond 8M × 18 without external address decoding logic.

Is the ZQ pin required for functional operation?

Yes. The ZQ pin must be connected to a precision 240 Ω resistor (±1%) tied to VSS to calibrate output driver impedance. Without ZQ calibration, ODT and output drive strength are undefined, leading to signal integrity failures above 200 MHz. The ZQ resistor value directly sets Q/CQ output impedance to 48 Ω (0.2 × 240 Ω).

CY7C2663KV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C2663KV18-450BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2663KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2663KV18-450BZXC reliable?

The price and inventory of CY7C2663KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2663KV18-450BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2663KV18-450BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2663KV18-450BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2663KV18-450BZXC?

CY7C2663KV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2663KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2663KV18-450BZXC?

For technical support, including CY7C2663KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2663KV18-450BZXC requirements.

6.How does Aetrix verify that CY7C2663KV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2663KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2663KV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2663KV18-450BZXC?

All CY7C2663KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2663KV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2663KV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C2663KV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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