Cypress Semiconductor Corp CY7C2665KV18-550BZXC

Overview

CY7C2665KV18-550BZXC from Infineon Technologies (formerly Cypress) is a 4M × 36, 144-Mbit QDR® II+ SRAM with quad data rate architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 550 MHz with DDR interfaces on both read and write ports (1100 MT/s), supports separate read/write ports for concurrent transactions, and uses 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth networking line cards and packet buffer subsystems.

For engineers reviewing the CY7C2665KV18-550BZXC datasheet, CY7C2665KV18-550BZXC pinout, CY7C2665KV18-550BZXC application, or CY7C2665KV18-550BZXC equivalent, key selection criteria include 2.5-cycle read latency timing, ODT support for D[35:0]/BWS[3:0]/K/K inputs, echo clock (CQ/CQ) synchronization, QVLD data validity signaling, and 165-ball FBGA (15 × 17 × 1.4 mm) package compatibility with HSTL-18 I/O.

Technical Context

The CY7C2665KV18 implements a true dual-port synchronous SRAM architecture with independent read and write data paths, eliminating bus turnaround overhead. Its QDR II+ core uses two-phase clocking (K/K) to latch addresses and data on alternating rising edges, enabling four-word burst transfers per access.

It integrates a PLL for precise data placement, supports programmable ODT ranges via ZQ calibration and ODT pin logic level, and delivers full data coherency through synchronous self-timed writes and edge-aligned QVLD output - all while maintaining strict 1.8 V ±0.1 V VDD and 1.4–1.8 V VDDQ operating windows.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, with HSTL-18 compatible I/O.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with AS7C3256A-15JCIN and MT47H64M16HR-37E:H, the CY7C2665KV18-550BZXC uniquely delivers deterministic 2.5-cycle latency, concurrent dual-port operation, and integrated ODT - making it irreplaceable for high-throughput, low-jitter packet buffering where timing predictability and signal integrity are design-critical.

Availability

CY7C2665KV18-550BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and baseband processing cache applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for CY7C2665KV18-550BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and high-performance memory solutions.

This device belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth data buffering in networking, telecommunications, and high-end test equipment where concurrent access, low latency, and signal integrity are non-negotiable.

FAQ

What is the function of the DOFF pin on CY7C2665KV18-550BZXC?

The DOFF (Data Output Fall-off) pin configures read latency mode: when asserted high, it enables 2.5-cycle read latency for maximum bandwidth; when low, it reverts to 1-cycle latency like QDR I devices. This pin is sampled at power-up and remains static during operation - it does not support dynamic switching. The setting directly affects internal pipeline depth and must match controller timing parameters.

How does on-die termination (ODT) work on this SRAM?

ODT provides programmable input termination for D[35:0], BWS[3:0], and K/K pins using internal resistive networks calibrated against the ZQ pin's external reference resistor (175–350 Ω). The ODT pin selects between two impedance ranges: low range (RQ/3.33) or high range (RQ/1.66). Termination is enabled only during active input sampling windows, reducing power versus always-on external resistors.

Can CY7C2665KV18-550BZXC operate with 1.5 V VDDQ?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V operation. At 1.5 V, HSTL-15-compatible signaling is achieved with adjusted drive strength and timing margins. DC and AC specifications in the datasheet explicitly cover 1.5 V operation, and all ODT calibration and echo clock functionality remain fully functional within this range.

What is the purpose of the CQ and CQ echo clocks?

CQ and CQ are free-running, K/K-synchronized output clocks that replicate the phase and duty cycle of the input clocks with minimal skew. They serve as source-synchronous timing references for the Q[35:0] data bus, enabling reliable capture of DDR outputs at the receiving controller. Their edge alignment with QVLD ensures setup/hold timing margins are preserved even at 550 MHz clock rates.