Cypress Semiconductor Corp CY7C2665KV18-550BZXI
- Part No.:
- CY7C2665KV18-550BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2665KV18-550BZXI.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2665KV18 from Infineon Technologies (formerly Cypress) is a 4M × 36, 144-Mbit QDR® II+ SRAM with quad data rate architecture, 550 MHz clock frequency, 2.5-cycle read latency, and on-die termination (ODT). It features separate read/write ports, DDR interfaces on both ports (1100 MT/s effective data rate), and operates at 1.8 V core / 1.4–1.8 V I/O supply. Used in high-bandwidth networking line cards for packet buffering and header processing.
For engineers reviewing the CY7C2665KV18 datasheet, CY7C2665KV18 pinout, CY7C2665KV18 application, or CY7C2665KV18 equivalent, key selection criteria include burst depth (four-word), ODT support for D[35:0]/BWS[3:0]/K/K inputs, echo clock timing (CQ/CQ), QVLD validity signaling, and FBGA-165 package compatibility with high-speed PCB routing constraints.
Technical Context
The CY7C2665KV18 implements a synchronous pipelined SRAM architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Read and write operations are latched on alternate rising edges of complementary K/K clocks, enabling concurrent access without bus turnaround.
It integrates a PLL for precise data placement, supports DOFF pin to switch between 2.5-cycle (QDR II+) and 1-cycle (QDR I-compatible) read latency modes, and uses HSTL I/O with variable-drive output buffers. ODT impedance is selected via the ODT pin and calibrated against an external ZQ resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (4M × 36 organization) |
| Max Clock Frequency | 550 MHz - enables 1100 MT/s DDR throughput per port |
| Read Latency | 2.5 cycles (DOFF = high) - deterministic timing for pipeline-aligned data capture |
| VDD / VDDQ | Core: 1.8 V ±0.1 V; I/O: 1.4–1.8 V - supports dual-voltage system integration |
| ODT Support | On-die termination for D[35:0], BWS[3:0], K/K - eliminates 12+ external resistors, reduces board area |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - fine-pitch, thermally enhanced for high-speed memory subsystems |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - matches ASIC/FPGA memory controllers |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous data input | Latched on rising edges of K/K; supports full 36-bit parallel writes |
| Q[35:0] | Synchronous data output | DDR output driven on K/K rising edges; four-word burst sequence |
| RPS / WPS | Port select control | Active-low signals enabling independent read/write port activation |
| BWS[3:0] | Byte write select | Four independent 9-bit byte masks - enables partial-word writes without read-modify-write |
| K / K | Differential clock inputs | Complementary clocks for DDR timing; only rising edges used for sampling |
| CQ / CQ | Echo clock outputs | Free-running, edge-aligned copies of K/K - simplify high-speed data capture in FPGA receivers |
| QVLD | Valid data indicator | Asserted synchronously with CQ/CQ rising edges - unambiguous data readiness signal |
| ODT | ODT range select | Configures termination resistance (RQ/1.66 or RQ/3.33) during power-up initialization |
| ZQ | Impedance calibration reference | Connects to external precision resistor (175–350 Ω) to calibrate output driver and ODT impedance |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read and write operations - no arbitration delay or bus contention |
| Four-word burst architecture | Reduces address bus toggling by 75% vs. single-word access - lowers EMI and routing complexity |
| On-die termination (ODT) | Programmable termination for data, byte-select, and clock inputs - eliminates 16+ discrete resistors |
| DOFF-configurable latency | Selects 2.5-cycle (QDR II+) or 1-cycle (QDR I) read mode - maintains backward compatibility |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system programming - supports production test and debug |
Applications
| High-Speed Network Switching | Telecom Line Cards |
|---|---|
|
Use Scenario: Buffering packet headers and metadata in 100G Ethernet switching ASICs. IC Role / Device Role / Timing Role: Low-latency, concurrent-access SRAM serving as ingress/egress descriptor cache. Use Value: 2.5-cycle read latency and four-word burst deliver deterministic 1100 MT/s bandwidth per port - meets sub-10 ns header lookup SLA. |
Use Scenario: Storing real-time voice channel buffers and protocol state tables in VoIP gateways. IC Role / Device Role / Timing Role: Dual-port SRAM providing simultaneous access for DSP read and controller write paths. Use Value: Independent RPS/WPS controls enable lock-free buffer management - eliminates software synchronization overhead. |
| Test Equipment Memory Buffers | High-Frequency Trading Systems |
|
Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE). IC Role / Device Role / Timing Role: Burst-mode write buffer synchronized to sampling clock, with echo-clock–timed readout. Use Value: CQ/CQ echo clocks align data capture windows precisely to FPGA logic - reduces setup/hold margin requirements by >150 ps. |
Use Scenario: Storing order book snapshots and market data feeds in ultra-low-latency trading engines. IC Role / Device Role / Timing Role: Deterministic-latency memory for time-critical order matching logic. Use Value: ODT on all critical inputs (D[35:0], BWS[3:0], K/K) ensures signal integrity at 550 MHz - prevents bit errors in nanosecond-scale decision loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C331624PFS-55BIN | ×32 configuration, 550 MHz, no ODT, no echo clocks, 2.5 V core | Lacks concurrent port support; requires external termination; incompatible voltage domain | Only suitable where lower density (128 Mbit), simpler interface, and 2.5 V systems are acceptable |
| MT47H64M16HR-37E:H | DDR2 SDRAM, ×16, 375 MHz, 1.8 V, no separate ports, refresh required | Asynchronous refresh interrupts deterministic timing; no true dual-port capability | Applicable only when cost-per-bit outweighs latency determinism and concurrency needs |
Compared with AS7C331624PFS-55BIN and MT47H64M16HR-37E:H, the CY7C2665KV18 uniquely delivers guaranteed 2.5-cycle latency, hardware ODT, echo clocks, and true independent read/write ports - essential for deterministic high-throughput systems where timing predictability is non-negotiable.
Availability
CY7C2665KV18 is available at Aetrix Electronics and suitable for high-speed network switching, telecom line cards, ATE waveform capture, and low-latency financial trading systems requiring stable component supply across multi-year production cycles.
Supply support for CY7C2665KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, with global manufacturing, quality, and support infrastructure.
This device belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in ASIC- and FPGA-based communications infrastructure where bus turnaround latency and signal integrity are critical.
FAQ
What is the function of the DOFF pin on CY7C2665KV18?
The DOFF (Data-Off) pin selects the read latency mode: when asserted high, it enables QDR II+ operation with 2.5-cycle read latency; when low, it reverts to QDR I-compatible 1-cycle latency. This pin is sampled during power-up initialization and remains static during operation - it does not support dynamic switching.
How does on-die termination (ODT) work on this SRAM?
ODT applies programmable termination resistance to D[35:0], BWS[3:0], and K/K inputs using internal switched resistors calibrated against the ZQ pin's external reference resistor. The ODT pin selects between two ranges: high (RQ/1.66) or low (RQ/3.33), with floating defaulting to high range - eliminating need for 16+ discrete terminators.
Can CY7C2665KV18 be used with a 1.5 V VDDQ supply?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V. At 1.5 V, HSTL output drive strength is reduced versus 1.8 V, but all AC timing specifications (including 550 MHz max clock) remain valid per datasheet Table 1, provided VDDQ stability and noise margins are maintained.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, edge-aligned copies of the K and K input clocks, respectively. They are output-synchronized to simplify timing closure in receiving FPGAs/ASICs - allowing data capture using echo clocks instead of K/K, which avoids skew between clock and data paths in high-speed layouts.
CY7C2665KV18-550BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 144Mbit
- Memory Organization:
- 4M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 550 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C2665KV18-550BZXI FAQ
1.How can I place an order for CY7C2665KV18-550BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2665KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2665KV18-550BZXI reliable?
The price and inventory of CY7C2665KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2665KV18-550BZXI is usually 5 days.
3.What payment methods are accepted for CY7C2665KV18-550BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2665KV18-550BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C2665KV18-550BZXI?
CY7C2665KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2665KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2665KV18-550BZXI?
For technical support, including CY7C2665KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2665KV18-550BZXI requirements.
6.How does Aetrix verify that CY7C2665KV18-550BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C2665KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2665KV18-550BZXI meets industry standards.
7.What is the process for return or replacement of CY7C2665KV18-550BZXI?
All CY7C2665KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2665KV18-550BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2665KV18-550BZXI part is unused and in its original packaging.
Return procedure for CY7C2665KV18-550BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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