Cypress Semiconductor Corp CY7C2670KV18-450BZI

Overview

CY7C2670KV18-450BZI from Cypress Semiconductor is a 144-Mbit (4 M × 36) DDR II+ synchronous pipelined SRAM with two-word burst architecture, 2.5-cycle read latency at 450 MHz, on-die termination (ODT), and echo clocks (CQ/CQ) for high-speed data capture in memory subsystems. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, supporting both DDR I (1-cycle latency, DOFF low) and DDR II+ (2.5-cycle latency, DOFF high) modes.

For engineers reviewing the CY7C2670KV18-450BZI datasheet, CY7C2670KV18-450BZI pinout, CY7C2670KV18-450BZI application, or CY7C2670KV18-450BZI equivalent, key selection criteria include supported ODT configurations (D[35:0], BWS[3:0], K/K), QVLD timing alignment with echo clocks, PLL-enabled 2.5-cycle latency mode, and 165-ball FBGA package mechanical compatibility.

Technical Context

The device implements a dual-clock DDR interface where K and K control all synchronous inputs and outputs-address, R/W, LD, BWS, and data-with rising-edge sampling. Internal organization comprises two 2 M × 36 arrays enabling concurrent address decoding and burst delivery of two 36-bit words per access.

It integrates a PLL for precise data placement relative to echo clocks CQ/CQ, supports programmable ODT ranges via ZQ resistor tuning (RQ/3.33 or RQ/1.66), and uses QVLD to indicate valid output data edge-aligned with CQ/CQ-eliminating external strobe routing in multi-device depth-expanded systems.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, non-Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102436B, CY7C2670KV18-450BZI uniquely delivers ODT, QVLD-aligned echo clocks, and DOFF-selectable latency-enabling simpler, higher-bandwidth memory subsystems without compromising timing determinism or thermal headroom.

Availability

CY7C2670KV18-450BZI is available at Aetrix Electronics and suitable for telecom line card buffering, FPGA co-processing memory, network processor look-up tables, and industrial motion control buffer applications requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C2670KV18-450BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2670KV18 belongs to Cypress's QDR-II+/DDR-II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA- and ASIC-based systems where echo-clock synchronization and on-die termination reduce signal integrity risk.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-low PLL disable control. When asserted low, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When high (default), the PLL enables DDR II+ mode with 2.5-cycle latency and up to 450 MHz operation. Pull-up to VDDQ via ≤10 kΩ is required for normal use.

How does on-die termination (ODT) work on CY7C2670KV18-450BZI?

ODT is configured via the ODT pin and calibrated using the ZQ pin connected to a precision resistor (175–350 Ω) to ground. A low ODT selects RQ/3.33 (~50–105 Ω), high selects RQ/1.66 (~105–210 Ω). It applies to D[35:0], BWS[3:0], and K/K inputs-replacing external 50 Ω resistors and improving signal integrity at 450 MHz.

Can CY7C2670KV18-450BZI operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. HSTL-18 I/O buffers are fully compliant at 1.5 V VDDQ, and all AC timing specifications-including setup/hold and tAC-are guaranteed across this range per the datasheet's "Operating Range" table.

What is the role of QVLD and how is it timed relative to CQ/CQ?

QVLD is a valid-data indicator that goes high precisely on the rising edge of CQ and CQ during read bursts, signaling that DQ[35:0] contains valid data. Its edge alignment eliminates the need for separate strobe nets or deskew circuits-critical for maintaining <15 ps inter-device skew in depth-expanded memory systems.