Cypress Semiconductor Corp CY7S1041G30-10BVXI

Overview

CY7S1041G30-10BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) asynchronous static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports 15 µA deep-sleep current, and operates across industrial temperature (–40°C to +85°C) in a 48-ball VFBGA (6 × 8 × 1.0 mm) package. It is used in mission-critical industrial controllers requiring error-resilient, low-power memory retention.

For engineers reviewing the CY7S1041G30-10BVXI datasheet, CY7S1041G30-10BVXI pinout, CY7S1041G30-10BVXI application, or CY7S1041G30-10BVXI equivalent, key selection criteria include ECC-enabled single-bit error correction, 10 ns access timing at 3.0 V, 15 µA deep-sleep current, byte-selectable writes via BHE/ BLE, and VFBGA package compatibility with high-density PCB layouts.

Technical Context

The CY7S1041G30-10BVXI implements a synchronous-free, fully asynchronous SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read access without automatic write-back. Its PowerSnooze™ mode activates via the DS pin, reducing current to 15 µA while retaining data at 1.0 V.

It supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); this variant is rated for 2.2–3.6 V operation with 10 ns tAA. Byte enable control (BHE/ BLE) enables independent upper/lower 8-bit writes, and the ERR pin - absent in this BVXI variant - is omitted per ordering code suffix "G" (vs. "GE").

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm height, JEDEC-compliant BVXI footprint (I/O[7:0] and I/O[15:8] ball mapping matches JEDEC standard).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:D, the CY7S1041G30-10BVXI uniquely combines true asynchronous operation, hardware ECC, and sub-20 µA deep-sleep - making it the sole option for deterministic, low-power, error-resilient SRAM in safety-certified embedded systems.

Availability

CY7S1041G30-10BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway data loggers, and avionics health monitors requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1041G30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for industrial and transportation applications demanding error-resilient, low-power, asynchronous memory with extended temperature and voltage tolerance.

FAQ

Does CY7S1041G30-10BVXI support automatic error correction write-back?

No. The embedded ECC logic detects and corrects single-bit errors during read operations only. Corrected data remains in the sense amplifier but is not automatically written back to the memory array. System firmware must initiate explicit write cycles if persistent correction is required. This behavior is documented in Note 1 of the datasheet and applies to all CY7S1041G variants.

What is the function of the DS pin, and how does it differ from CE or OE?

The DS (Deep-Sleep) pin is an active-low input that places the device into ultra-low-power data retention mode (IDS ≤ 15 µA), disabling all I/O drivers and internal logic except the retention circuit. Unlike CE (which enables standby mode at ~6 mA) or OE (which controls output drivers only), DS cuts power to the entire memory core while preserving stored data at 1.0 V.

Is the ERR pin present on CY7S1041G30-10BVXI?

No. The "G" suffix in CY7S1041G30-10BVXI indicates the non-ERR version. Only parts with "GE" in the ordering code (e.g., CY7S1041GE30-10BVXI) include the ERR output pin for 1-bit error indication. This variant uses the BVXI package without ERR pin connection, as confirmed in Figures 4–5 of the datasheet.

Can CY7S1041G30-10BVXI operate at 1.8 V?

No. This specific variant (suffix "30") is rated for 2.2 V to 3.6 V operation only. While the CY7S1041G family includes a 1.65–2.2 V speed grade (e.g., CY7S1041G18), the "30" designation confirms 10 ns timing at 3.0 V nominal, and operation below 2.2 V violates the specified VCC min and may cause timing violations or data retention failure.