Infineon Technologies CY9AF131LAPMC1-G-UNE2

Overview

CY9AF131LAPMC1-G-UNE2 from Cypress Semiconductor is a 4 Mbit (512K × 8) low-power static RAM with PowerSnooze™ and embedded ECC logic, designed for high-reliability data buffering in industrial controllers and medical instrumentation. It delivers 10 ns access time at 2.2–3.6 V, supports 15 µA deep-sleep current, includes ERR output for single-bit error detection/correction, and operates across –40°C to +85°C.

For engineers reviewing the CY9AF131LAPMC1-G-UNE2 datasheet, CY9AF131LAPMC1-G-UNE2 pinout, CY9AF131LAPMC1-G-UNE2 application, or CY9AF131LAPMC1-G-UNE2 equivalent, key selection criteria include ECC-enabled data integrity, ultra-low IDS in deep-sleep mode, TSOP II package compatibility, voltage range flexibility (1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V), and TTL-compatible I/O signaling.

Technical Context

The device implements a 512K × 8 SRAM array with integrated ECC encoder/decoder that detects and corrects single-bit errors on read access without automatic rewrite. Its PowerSnooze™ architecture enables three distinct power states: active (ICC = 38 mA typ), standby (ISB2 = 6 mA typ), and deep-sleep (IDS = 15 µA max).

Control logic uses asynchronous CE/OE/WE inputs with DS pin enabling retention-only mode; ERR is asserted only on CY7S1049GE variants and is present on this part per ordering code "-G-UNE2" indicating ERR functionality. Addressing uses 19 address lines (A0–A18), and I/O pins are bidirectional with TTL-level compatibility.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (10.16 mm × 20.00 mm × 1.00 mm), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC-enabled low-power SRAM applications.

Compared with IS61WV5128BLL-10MLI and NVTFS4M8T100, CY9AF131LAPMC1-G-UNE2 uniquely combines on-die ECC correction with sub-20 µA deep-sleep and an observable ERR signal-making it optimal for safety-critical, battery-constrained systems requiring both integrity and longevity.

Availability

CY9AF131LAPMC1-G-UNE2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical diagnostic memory caching, and avionics sensor logging requiring stable component supply across extended product lifecycles.

Supply support for CY9AF131LAPMC1-G-UNE2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and medical markets.

This part belongs to the CY7S1049G(E) PowerSnooze™ SRAM family, engineered specifically for applications demanding simultaneous low-power retention, fast random access, and hardware-based data integrity assurance.

FAQ

Does CY9AF131LAPMC1-G-UNE2 support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction autonomously during every read operation using on-die ECC logic. No CPU or memory controller action is required-the corrected data appears on I/O pins, and ERR asserts for one cycle to signal the event.

What is the minimum supply voltage for data retention in deep-sleep mode?

Data retention is guaranteed down to 1.0 V VCC in deep-sleep mode (DS = low). This allows continued memory integrity during brownout conditions or capacitor-based hold-up power, even when main supply drops below operational thresholds.

Is the ERR pin actively driven or open-drain?

The ERR pin is an open-drain output. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) to generate a valid logic-high signal when an error is detected and corrected. The pulse width matches one read cycle duration.

Can CY9AF131LAPMC1-G-UNE2 operate at 2.5 V supply?

Yes. The device supports the 2.2–3.6 V operating range, and 2.5 V falls within specification. At 2.5 V, typical ICC is 38 mA and tAA remains 10 ns-fully compliant with datasheet AC/DC characteristics for that voltage band.