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Analog Devices Inc./Maxim Integrated DS1258AB-100
- Part No.:
- DS1258AB-100
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 40-DIP Module (0.610", 15.495mm)
- Datasheet:
-
DS1258AB-100.pdf
- Description:
- IC NVSRAM 2MBIT PARALLEL 40EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,868
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Product details
Overview
DS1258AB-100 from Maxim Integrated (now Analog Devices) is a 128k × 16-bit nonvolatile SRAM with integrated lithium backup, 40-pin 740-mil extended DIP package, 100ns access time, 5V ±5% supply, and industrial-grade write protection at 4.50–4.75V. It serves as self-contained NV memory in embedded controllers requiring data retention during power loss.
For engineers reviewing the DS1258AB-100 datasheet, DS1258AB-100 pinout, DS1258AB-100 application, or DS1258AB-100 equivalent, key selection criteria include VCC write-protection threshold, byte-select enable logic (CEU/CEL), tACC/tWC timing compliance, and 40-pin DIP mechanical compatibility with legacy socketed designs.
Technical Context
The DS1258AB-100 implements autonomous power-fail detection via continuous VCC monitoring, triggering automatic lithium switchover below ~3.0V and unconditional write protection when VCC drops below 4.50V. Its dual chip-enable architecture (CEU/CEL) enables independent upper- and lower-byte access without external logic.
It operates as a fully static, asynchronous parallel interface device with no clocks or refresh required. All 17 address lines (A0–A16) and 16 bidirectional data lines (DQ0–DQ15) are TTL-compatible, supporting direct connection to 80Cxx/80xxx and 68xxx microprocessor buses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128k × 16-bit (2,097,152 bits), 131,072-word addressing space |
| Access Time (tACC) | 100ns max - defines minimum read/write cycle interval for 5MHz bus operation |
| Write Protection Threshold | VTP = 4.50–4.75V - disables writes before VCC enters marginal range, preventing corruption |
| Data Retention | 10 years minimum without external power - guaranteed by sealed lithium cell and internal power-switching circuit |
| Supply Voltage | VCC = 4.75–5.25V - tight 5% tolerance supports stable operation in noise-prone industrial rails |
| Operating Temperature | 0°C to +70°C - commercial grade; IND variant extends to –40°C to +85°C |
| Package | 40-pin, 740-mil extended DIP - compatible with standard 0.6-inch wide sockets and wave-solder processes |
Pinout & Package
DS1258AB-100 uses a 40-pin, 740-mil extended dual in-line package (DIP) with 0.100" row spacing and 0.300" body width. Pin 1 is marked with a notch or dot; pins are arranged in two parallel rows of 20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus for full 131,072-word decoding; A16 enables full 128k×16 space |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus; high-impedance when CEU/CEL/OE inactive |
| CEU | Upper-Byte Chip Enable | Active-low control enabling DQ8–DQ15 only; allows byte-granular writes without masking logic |
| CEL | Lower-Byte Chip Enable | Active-low control enabling DQ0–DQ7 only; decouples byte access from processor data width |
| WE | Write Enable | Active-low signal initiating write; output drivers disabled during write to prevent bus contention |
| OE | Output Enable | Active-low control for read data drivers; must be high during writes |
| VCC | Power Supply | +5V ±5% main supply; powers logic and enables lithium disconnect circuit on first power-up |
| GND | Ground | Reference return for all signals and internal switching regulators |
Key Features
| Feature | Design Value |
|---|---|
| Integrated lithium battery | Electrically disconnected until first VCC application, preserving full 10-year retention capacity |
| Autonomous power-fail response | Switches to lithium backup within 300μs of VCC falling below ~3.0V; no external supervisor IC needed |
| Byte-select architecture | Independent CEU/CEL inputs eliminate need for external byte-enable logic or data masking |
| Unlimited write cycles | No endurance limit on SRAM core - supports logging, configuration, and real-time data buffers indefinitely |
| Zero-support-circuitry interface | Direct TTL-level connection to microprocessor buses; no glue logic, level shifters, or external capacitors required |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
Use Scenario: Storing runtime parameters, calibration coefficients, and alarm history in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate, byte-addressable storage with zero latency on power loss. Use Value: Eliminates need for EEPROM write delays or battery-backed DRAM refresh circuitry; retains data for ≥10 years unpowered. | Use Scenario: Preserving patient-specific therapy settings and device calibration across shutdowns in infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Self-protecting memory ensuring critical configuration survives brownouts and scheduled maintenance outages. Use Value: Meets IEC 62304 Class C software safety requirements by guaranteeing data integrity without firmware intervention. |
| Avionics Black Box Buffer | Telecom Base Station Real-Time Clock Backup |
Use Scenario: Capturing flight sensor snapshots in aircraft data recorders where power interruption may occur during crash impact. IC Role / Device Role / Timing Role: High-reliability NV SRAM with fast 100ns access and deterministic write-protection activation. Use Value: Ensures last valid sensor frame is preserved even if VCC collapses mid-write due to mechanical shock. | Use Scenario: Maintaining accurate time-of-day and network synchronization state during AC power loss in cellular base stations. IC Role / Device Role / Timing Role: Low-power NV memory backing RTC registers and frequency calibration tables. Use Value: Supports IEEE 1588 PTP holdover accuracy by retaining oscillator drift compensation data for >10 years offline. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1258Y-100 | Wider VCC tolerance (5V ±10%), lower write-protection threshold (4.25–4.5V); same pinout, speed, and package | Suitable for systems with less-regulated 5V rails; earlier write protection may reduce margin in noisy environments | Select DS1258Y-100 only if board-level VCC regulation cannot maintain ±5%; otherwise DS1258AB-100 provides tighter voltage guardbanding. |
| STK12C68 | Same 128k×16 organization and DIP-40 package, but uses capacitor-based backup (no lithium); 10-year retention requires periodic recharge | Requires external charging circuitry and fails retention if power is absent >1 month; not suitable for long-term unpowered storage | Choose STK12C68 only for cost-sensitive, short-downtime applications where lithium-free design is mandated; DS1258AB-100 guarantees decade-long retention without maintenance. |
Compared with DS1258Y-100 and STK12C68, the DS1258AB-100 delivers superior voltage-margin reliability and true maintenance-free retention-critical for mission-critical systems where power instability or extended offline periods are expected.
Availability
DS1258AB-100 is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, avionics data recording, and telecom infrastructure requiring stable component supply, long-lifecycle support, and guaranteed nonvolatile memory performance.
Supply support for DS1258AB-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices (via acquisition of Maxim Integrated) designs precision analog, mixed-signal, and nonvolatile memory solutions for high-reliability industrial, automotive, and communications systems.
The DS1258AB-100 belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically for applications demanding zero-data-loss memory resilience during unpredictable power failures.
FAQ
What is the guaranteed data retention period for DS1258AB-100?
The DS1258AB-100 guarantees a minimum 10-year data retention period in the absence of external power, based on built-in lithium energy source capacity, hermetic sealing, and internal power-switching circuitry. This specification is assured through component selection, process control, and design-not measured per unit during production testing.
Does DS1258AB-100 require external support circuitry for microprocessor interfacing?
No, the DS1258AB-100 requires no external support circuitry for microprocessor interfacing. Its TTL-compatible inputs, bidirectional data bus, and autonomous power-fail detection eliminate the need for external supervisors, level shifters, or write-protection logic-enabling direct connection to 80Cxx and 68xxx family buses.
How does DS1258AB-100 handle power-down and power-up transitions?
During power-down, DS1258AB-100 detects VCC decay and switches to lithium backup when VCC falls below ~3.0V, simultaneously enabling unconditional write protection. At power-up, it reconnects VCC to the RAM and disconnects the lithium source once VCC exceeds ~3.0V, resuming normal operation after VCC stabilizes above 4.75V.
What is the function of CEU and CEL pins on DS1258AB-100?
The CEU (Chip Enable Upper) and CEL (Chip Enable Lower) pins on DS1258AB-100 provide independent byte-select control: CEU active enables DQ8–DQ15 (upper byte), CEL active enables DQ0–DQ7 (lower byte), and both active enable full 16-bit access-eliminating need for external byte-mask logic in 8-bit or 16-bit systems.
Is DS1258AB-100 RoHS-compliant?
Yes, DS1258AB-100# (with trailing #) denotes the RoHS-compliant version. The standard DS1258AB-100 part is leaded; customers requiring RoHS compliance must specify the # suffix at order time, as both variants share identical electrical and mechanical specifications.
DS1258AB-100 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 40-DIP Module (0.610", 15.495mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 40-EDIP
DS1258AB-100 FAQ
1.How can I place an order for DS1258AB-100 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1258AB-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1258AB-100 reliable?
The price and inventory of DS1258AB-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1258AB-100 is usually 5 days.
3.What payment methods are accepted for DS1258AB-100?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1258AB-100 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1258AB-100?
DS1258AB-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1258AB-100 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1258AB-100?
For technical support, including DS1258AB-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1258AB-100 requirements.
6.How does Aetrix verify that DS1258AB-100 is sourced from the original manufacturer or authorized distributors?
All DS1258AB-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1258AB-100 meets industry standards.
7.What is the process for return or replacement of DS1258AB-100?
All DS1258AB-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1258AB-100, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1258AB-100 part is unused and in its original packaging.
Return procedure for DS1258AB-100:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1258AB-100 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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