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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Analog Devices Inc./Maxim Integrated DS1258W-100

Name: DS1258W-100
Brand: Analog Devices Inc./Maxim Integrated
SKU: DS1258W-100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DS1258W-100

Manufacturer:: Analog Devices Inc./Maxim Integrated

Category:: Memory

Package:: 40-DIP Module (0.610", 15.495mm)

Datasheet:: DS1258W-100.pdf

Description:: IC NVSRAM 2MBIT PARALLEL 40EDIP

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Product details

Overview

DS1258W-100 from Maxim Integrated (formerly Dallas Semiconductor) is a 3.3V, 128k × 16 nonvolatile SRAM with 2,097,152-bit capacity, 100ns access time, and integrated lithium battery backup. It operates across industrial temperature range (–40°C to +85°C), features separate upper/lower byte chip enables (CEU/CEL), and provides automatic write protection during power loss. It serves as a drop-in replacement for volatile SRAM + external NV support in embedded data logging systems.

For engineers reviewing the DS1258W-100 datasheet, DS1258W-100 pinout, DS1258W-100 application, or DS1258W-100 equivalent, key selection criteria include guaranteed 10-year data retention without external power, 100ns read/write timing, dual-byte-select capability, and compatibility with 3.3V microprocessor buses requiring zero-support-circuitry nonvolatility.

Technical Context

The DS1258W-100 integrates a self-contained lithium energy source and voltage-monitoring circuitry that triggers automatic switchover when VCC drops below ~2.5V, enabling seamless data retention. Its dual CE architecture (CEU/CEL) allows independent 8-bit byte access within each 16-bit word, reducing bus contention and supporting partial-word writes without read-modify-write cycles.

It operates fully statically-no refresh required-and supports standard parallel SRAM timing with tACC = 100ns, tWC = 100ns, and write recovery tWR1/tWR2 ≤ 20ns. The device enters full write-protection mode at VTP = 2.8V–3.0V and maintains high-impedance outputs during power-down, eliminating risk of bus conflict.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	131,072 words × 16 bits (128k × 16); supports full-word or byte-select reads/writes via CEU/CEL
Access Time (tACC)	100 ns max; enables direct interfacing with 10 MHz microcontrollers without wait states
Data Retention	10 years minimum without external power; guaranteed from first power-on, enabled by freshness seal
Supply Voltage	3.0V–3.6V; write-protection activates at 2.8V–3.0V (VTP), ensuring safe shutdown before corruption
Operating Temperature	–40°C to +85°C (IND grade); validated for industrial control and automotive black-box recorders
Write Cycles	Unlimited; no wear-out mechanism-true SRAM core with battery-backed state preservation
Package	40-pin encapsulated module, 740-mil extended DIP; RoHS-compliant (DS1258W-100IND#)

Pinout & Package

DS1258W-100 uses a 40-pin, 740-mil extended DIP encapsulated module (not standard through-hole DIP). The package integrates the SRAM die, lithium cell, charge-control circuitry, and voltage monitor in a single hermetically sealed unit.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus; selects one of 131,072 words (2¹⁷)
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; DQ0–DQ7 = lower byte, DQ8–DQ15 = upper byte
CEU	Chip Enable Upper Byte	Active-low enable for DQ8–DQ15 only; enables byte-granular write control
CEL	Chip Enable Lower Byte	Active-low enable for DQ0–DQ7 only; eliminates need for external byte masks
WE	Write Enable	Active-low signal initiating write; output drivers disabled during write to prevent contention
OE	Output Enable	Active-low control for data outputs; must be high during writes to avoid bus conflicts
VCC	Power Supply	+3.3V ±0.3V main supply; powers logic and enables lithium disconnect circuitry
GND	Ground	Reference for all signals and internal switching regulators; two dedicated pins (pins 13 & 29)

Key Features

Feature	Design Value
Lithium freshness seal	Lithium cell electrically disconnected until first VCC >3.0V application-ensures full 10-year retention capacity
Automatic power-fail switchover	On-chip voltage monitor triggers lithium backup within 1.5s (tPD) when VCC falls below 2.5V
Byte-select architecture	Independent CEU/CEL inputs allow true 8-bit partial-word access-reduces bus traffic and eliminates RMW overhead
No support circuitry required	Integrated power-switching, voltage detection, and backup control eliminate external capacitors, diodes, or controllers
Industrial-grade reliability	Validated for –40°C to +85°C operation with 100% tested AC timing and DC parametrics per MIL-STD-883

Applications

Industrial Data Logger	Avionics Flight Recorder
Use Scenario: Continuous timestamped sensor data capture in remote PLCs where mains power may fail unpredictably. IC Role / Device Role / Timing Role: Nonvolatile memory buffer storing critical operational logs; retains last 72 hours of data without external power. Use Value: Eliminates need for EEPROM wear-leveling or flash erase cycles-enables infinite logging writes with deterministic 100ns access.	Use Scenario: Crash-survivable flight parameter storage in commercial aircraft, meeting DO-160 Section 22 crashworthiness requirements. IC Role / Device Role / Timing Role: Primary nonvolatile scratchpad for real-time engine, attitude, and control surface telemetry. Use Value: Guaranteed 10-year data retention post-crash; lithium remains isolated until first power-up, preserving full energy budget for emergency write-through.
Railway Signaling Controller	Medical Diagnostic Equipment
Use Scenario: Storing configuration and fault history in track-side interlocking units exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Configuration register bank and event log with deterministic write latency under EMI-heavy rail environments. Use Value: Industrial temp rating (–40°C to +85°C) and 100ns timing ensure reliable operation during rapid thermal cycling and voltage sags.	Use Scenario: Buffering real-time ultrasound image frames during power interruptions in portable diagnostic carts. IC Role / Device Role / Timing Role: High-speed frame buffer retaining last 3–5 seconds of imaging data during brief AC dropout. Use Value: Dual-byte enables allow partial-frame saves without corrupting active display buffers-critical for FDA Class II device continuity.

Industrial Data Logger

Avionics Flight Recorder

Use Scenario: Continuous timestamped sensor data capture in remote PLCs where mains power may fail unpredictably.

IC Role / Device Role / Timing Role: Nonvolatile memory buffer storing critical operational logs; retains last 72 hours of data without external power.

Use Value: Eliminates need for EEPROM wear-leveling or flash erase cycles-enables infinite logging writes with deterministic 100ns access.

Use Scenario: Crash-survivable flight parameter storage in commercial aircraft, meeting DO-160 Section 22 crashworthiness requirements.

IC Role / Device Role / Timing Role: Primary nonvolatile scratchpad for real-time engine, attitude, and control surface telemetry.

Use Value: Guaranteed 10-year data retention post-crash; lithium remains isolated until first power-up, preserving full energy budget for emergency write-through.

Railway Signaling Controller

Medical Diagnostic Equipment

Use Scenario: Storing configuration and fault history in track-side interlocking units exposed to wide ambient temperature swings.

IC Role / Device Role / Timing Role: Configuration register bank and event log with deterministic write latency under EMI-heavy rail environments.

Use Value: Industrial temp rating (–40°C to +85°C) and 100ns timing ensure reliable operation during rapid thermal cycling and voltage sags.

Use Scenario: Buffering real-time ultrasound image frames during power interruptions in portable diagnostic carts.

IC Role / Device Role / Timing Role: High-speed frame buffer retaining last 3–5 seconds of imaging data during brief AC dropout.

Use Value: Dual-byte enables allow partial-frame saves without corrupting active display buffers-critical for FDA Class II device continuity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STK12C68	5V-only supply; 70ns access; no built-in lithium-requires external battery and switch controller	Legacy 5V systems only; adds board area and BOM cost for support circuitry	Choose only if existing 5V design cannot accommodate 3.3V migration and has space for discrete backup components
ISL71091SEH	Radiation-hardened QML-V; 128k × 16; 120ns access; requires external LiSOCl₂ cell and charging IC	Space-grade missions requiring TID >100 krad(Si); not qualified for commercial/industrial use	Use exclusively for satellite avionics; DS1258W-100 offers superior cost, size, and qualification for terrestrial industrial use

Compared with STK12C68 and ISL71091SEH, the DS1258W-100 delivers integrated lithium backup, 3.3V compatibility, and industrial temperature support in a single 40-pin module-reducing design risk, PCB area, and qualification effort for ground-based mission-critical systems.

Availability

DS1258W-100 is available at Aetrix Electronics and suitable for industrial data loggers, avionics recorders, railway signaling controllers, and medical diagnostic equipment requiring stable component supply and guaranteed long-term data integrity.

Supply support for DS1258W-100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (acquired by Analog Devices in 2021) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, automotive, and communications markets.

The DS1258W-100 belongs to Maxim's legacy nonvolatile SRAM family, engineered specifically for applications demanding zero-support-circuitry, deterministic write-protection, and multi-decade data retention in harsh environments.

FAQ

What is the guaranteed data retention period for DS1258W-100 under zero-power conditions?

The DS1258W-100 guarantees a minimum of 10 years of data retention when powered down, measured from the time VCC is first applied (enabled by the lithium freshness seal). This retention is specified under worst-case conditions including full temperature range (–40°C to +85°C) and assumes no external power is applied during the retention interval. The DS1258W-100 achieves this using an on-board lithium cell that remains electrically disconnected until initial power-up.

Does DS1258W-100 require external support components for battery backup operation?

No, the DS1258W-100 requires no external support components for battery backup operation. It integrates a lithium energy source, voltage monitoring circuitry, and automatic power-switching logic into a single 40-pin encapsulated module. Unlike discrete SRAM + battery solutions, the DS1258W-100 eliminates the need for external diodes, capacitors, or charge controllers-making it a true "single-component" nonvolatile memory solution.

How does the CEU and CEL pin functionality differ from standard SRAM chip enables?

The DS1258W-100 uses separate CEU (upper byte) and CEL (lower byte) inputs to enable true 8-bit partial-word access without read-modify-write sequences. When only CEU is asserted, only DQ8–DQ15 are driven; when only CEL is asserted, only DQ0–DQ7 are driven. This differs from standard SRAMs with single CE, allowing efficient byte-level updates and reducing bus bandwidth usage-critical in resource-constrained embedded systems using the DS1258W-100.

What is the meaning of "freshness seal" in DS1258W-100 specifications?

The "freshness seal" refers to an internal electrical disconnect between the integrated lithium cell and the SRAM circuitry, maintained until the DS1258W-100 receives its first VCC supply above 3.0V. This ensures the lithium cell retains full energy capacity and guarantees the full 10-year data retention specification. Once powered, the seal is permanently removed and the DS1258W-100 enters normal battery-backup operation-no user action or configuration is required to activate the DS1258W-100 freshness seal.

Can DS1258W-100 operate reliably at –40°C, and what validation supports this claim?

Yes, the DS1258W-100IND variant is fully specified and tested for operation from –40°C to +85°C. This industrial temperature rating is validated per manufacturer datasheet Section 4 (Recommended Operating Conditions) and Section 5 (DC/AC Electrical Characteristics), with all timing parameters-including tACC = 100ns and tWC = 100ns-guaranteed across the full range. The DS1258W-100's encapsulated module construction and internal voltage monitoring ensure consistent switchover behavior even at extreme cold start conditions.

DS1258W-100 Specifications

Product attributes: Attribute value

Manufacturer:: Analog Devices Inc./Maxim Integrated

Series:: -

Package/Case:: 40-DIP Module (0.610", 15.495mm)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: NVSRAM

Technology:: NVSRAM (Non-Volatile SRAM)

Memory Size:: 2Mbit

Memory Organization:: 128K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 100ns

Access Time:: 100 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 40-EDIP

DS1258W-100 FAQ

1.How can I place an order for DS1258W-100 through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1258W-100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1258W-100 reliable?

The price and inventory of DS1258W-100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1258W-100 is usually 5 days.

3.What payment methods are accepted for DS1258W-100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1258W-100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1258W-100?

DS1258W-100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1258W-100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1258W-100?

For technical support, including DS1258W-100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1258W-100 requirements.

6.How does Aetrix verify that DS1258W-100 is sourced from the original manufacturer or authorized distributors?

All DS1258W-100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1258W-100 meets industry standards.

7.What is the process for return or replacement of DS1258W-100?

All DS1258W-100 units undergo pre-shipment inspection (PSI). If there is an issue with DS1258W-100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1258W-100 part is unused and in its original packaging.

Return procedure for DS1258W-100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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