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Analog Devices Inc./Maxim Integrated DS1258W-100IND#
- Part No.:
- DS1258W-100IND#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 40-DIP Module (0.610", 15.495mm)
- Datasheet:
-
DS1258W-100IND#.pdf
- Description:
- IC NVSRAM 2MBIT PARALLEL 40EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,570
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Product details
Overview
DS1258W-100IND# from Maxim Integrated (now Analog Devices) is a 3.3V, 128k × 16 nonvolatile SRAM with lithium-backed data retention, 100ns access time, industrial temperature range (−40°C to +85°C), and 40-pin 740-mil extended DIP package. It functions as a drop-in memory replacement in microprocessor systems requiring persistent storage without external backup circuitry - used in industrial controllers, metering, and legacy embedded systems.
For engineers reviewing the DS1258W-100IND# datasheet, DS1258W-100IND# pinout, DS1258W-100IND# application, or DS1258W-100IND# equivalent, key selection criteria include guaranteed 10-year data retention at VCC = 0V, byte-selectable write enable via CEU/CEL, automatic power-fail detection and write protection below 2.8V, and compatibility with standard 16-bit parallel bus interfaces.
Technical Context
The DS1258W-100IND# integrates a self-contained lithium battery and voltage-monitoring circuitry that autonomously switches to battery backup when VCC drops below ~2.5V, enabling seamless transition into data-retention mode. Its dual chip-enable architecture (CEU/CEL) allows independent upper- and lower-byte access without external logic.
It operates fully statically - no refresh required - and supports standard asynchronous read/write timing with tACC = 100ns, tWC = 100ns, and write recovery tWR = 5ns. The device enters high-impedance output state during power-down, and all inputs become "don't care" once write protection activates.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 131,072 words × 16 bits (128k × 16); supports full-word or byte-selectable access via CEU/CEL. |
| Access Time (tACC) | 100 ns max; enables direct interface with 10 MHz microprocessors without wait states. |
| Data Retention | 10 years minimum at 25°C with zero VCC; powered solely by internal lithium source during outage. |
| Operating Voltage | 3.0 V to 3.6 V; write protection triggers at 2.8–3.0 V (VTP), ensuring safe shutdown before corruption. |
| Temperature Range | −40°C to +85°C (IND grade); qualified for uncontrolled industrial environments without derating. |
| Package | 40-pin, 740-mil extended DIP; compatible with through-hole PCB assembly and legacy socket designs. |
| Write Cycles | Unlimited; no endurance limit due to SRAM core - unlike flash or EEPROM. |
Pinout & Package
DS1258W-100IND# uses a 40-pin, 740-mil extended dual in-line package (DIP) with 0.100″ row spacing and 0.300″ body width. Pin 1 is marked with a notch or dot; pins are numbered counter-clockwise from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; selects one of 131,072 words (217 = 131,072). |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; high-impedance when CEU/CEL/OE inactive. |
| CEU | Upper-Byte Chip Enable | Active-low; enables DQ8–DQ15 only when CEL is high. |
| CEL | Lower-Byte Chip Enable | Active-low; enables DQ0–DQ7 only when CEU is high. |
| WE | Write Enable | Active-low; initiates write cycle when CEU or CEL is active; disables outputs on falling edge (tODW = 35 ns). |
| OE | Output Enable | Active-low; controls output drivers; must be high during writes to avoid bus contention. |
| VCC | Power Supply | +3.3 V ±0.3 V; powers logic and RAM; triggers automatic battery switchover below ~2.5 V. |
| GND | Ground | Reference return for all signals and internal battery circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| Lithium freshness seal | Battery electrically disconnected until first VCC application >3.0 V - guarantees full 10-year retention capacity. |
| Automatic power-fail response | Detects VCC decay below 2.8 V and asserts unconditional write protection within 1.5 s (tPD), preventing partial writes. |
| Byte-selectable access | Independent CEU/CEL control eliminates need for external byte-lane gating logic in 16-bit systems. |
| No external support circuitry | Self-contained voltage monitor, switch, and battery - replaces discrete NV-SRAM solutions requiring regulators, diodes, and capacitors. |
| Unlimited write endurance | SRAM core enables infinite write cycles - critical for logging, configuration, and real-time data buffers. |
Applications
| Industrial Programmable Logic Controllers (PLCs) | Smart Electricity Meters |
|---|---|
|
Use Scenario: Storing firmware configuration, calibration tables, and event logs across frequent power interruptions in factory-floor PLCs. IC Role / Device Role / Timing Role: Nonvolatile memory holding critical runtime parameters; retains data during brownouts without software intervention. Use Value: Eliminates need for external EEPROM or battery-backed RAM modules - reduces BOM count and improves field reliability. |
Use Scenario: Recording energy consumption timestamps, tamper events, and tariff schedules in utility-grade meters operating 20+ years. IC Role / Device Role / Timing Role: Primary data retention element; activated automatically on grid failure with no host processor involvement. Use Value: Guarantees 10-year data integrity at −40°C to +85°C without thermal derating or external conditioning. |
| Legacy Medical Diagnostic Equipment | Railway Signaling Control Units |
|
Use Scenario: Preserving calibration coefficients and diagnostic history in aging medical imaging devices where board redesign is prohibited. IC Role / Device Role / Timing Role: Pin-compatible upgrade path for obsolete NV-SRAMs; maintains identical 40-pin DIP footprint and timing. Use Value: Enables life-extension of certified hardware without requalification - meets IEC 62304 traceability requirements. |
Use Scenario: Capturing train position logs and safety-critical command histories in trackside signaling cabinets exposed to wide ambient swings. IC Role / Device Role / Timing Role: Fail-safe memory node; transitions to battery mode within 1.5 s of input voltage collapse per EN 5012x standards. Use Value: Meets SIL-2 data retention requirements for railway applications without auxiliary supervision circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1248W-100IND# | 64k × 8 organization (512 Kbit), single-byte interface, same 40-pin DIP, 100ns speed. | Requires two devices for 16-bit bus width; lacks CEU/CEL byte-select - needs external gating for partial writes. | Select if system uses 8-bit data path or requires lower density with identical industrial temp and retention. |
| STK12C68-100I | 128k × 8 organization (1 Mbit), 32-pin SOIC, 100ns, integrated lithium - but no CEU/CEL byte control. | Smaller footprint but incompatible pinout; requires PCB redesign and bus-width adaptation (two chips for 16-bit). | Choose for space-constrained new designs where DIP is not required and 8-bit interface suffices. |
Compared with DS1248W-100IND# and STK12C68-100I, the DS1258W-100IND# uniquely delivers 128k × 16 density in a single 40-pin DIP with native byte-select capability - reducing component count and eliminating layout changes in legacy 16-bit systems requiring industrial-grade nonvolatility.
Availability
DS1258W-100IND# is available at Aetrix Electronics and suitable for industrial programmable logic controllers, smart electricity meters, legacy medical diagnostics, and railway signaling control units requiring stable component supply across extended product lifecycles.
Supply support for DS1258W-100IND# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, automotive, and communications markets.
The DS1258W-100IND# belongs to Maxim's nonvolatile SRAM family, engineered to replace multi-component backup memory systems with a single, self-contained module for mission-critical data retention in harsh environments.
FAQ
What is the guaranteed data retention period for DS1258W-100IND# under zero-power conditions?
The DS1258W-100IND# guarantees a minimum of 10 years of data retention when VCC is absent, measured from the time external power is first applied. This specification assumes operation at +25°C and accounts for cumulative battery discharge over time - verified per manufacturer testing and documented in the DS1258W datasheet revision 8, Note 9.
Does DS1258W-100IND# require external circuitry to manage battery backup or power-fail detection?
No, the DS1258W-100IND# contains fully integrated lithium power switching and voltage monitoring circuitry. It autonomously disconnects the lithium source until first power-up, then detects VCC decay below ~2.5 V and enables backup without any external components - eliminating the need for regulators, diodes, or supervisory ICs.
Can DS1258W-100IND# be used as a direct replacement for standard 128k × 16 SRAMs like AS6C1008 or IS61LV102416?
Yes, the DS1258W-100IND# is pin-compatible with standard 40-pin 128k × 16 SRAMs in read/write functionality, but adds nonvolatile retention. Its CEU/CEL architecture mirrors typical byte-enable behavior, and timing parameters (tACC = 100 ns, tWC = 100 ns) match commercial-speed SRAMs - making it a functional drop-in upgrade where data persistence is required.
What is the significance of the IND suffix in DS1258W-100IND#?
The IND suffix in DS1258W-100IND# denotes qualification for the industrial temperature range of −40°C to +85°C. This includes extended testing of AC/DC parameters, data retention, and power-fail response across the full range - distinct from the commercial-grade DS1258W-100# (0°C to +70°C) and essential for deployment in outdoor, transportation, or factory-floor applications.
How does DS1258W-100IND# handle simultaneous CEU and CEL activation during a write cycle?
When both CEU and CEL are active (low) during a write cycle, the DS1258W-100IND# writes to the full 16-bit word (DQ0–DQ15). The device treats this as a standard full-word write - no arbitration or conflict occurs. Write termination is determined by the earlier rising edge of CEU, CEL, or WE, as specified in the timing diagram for Write Cycle 1.
DS1258W-100IND# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 40-DIP Module (0.610", 15.495mm)
- Packaging:
- Box
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 40-EDIP
DS1258W-100IND# FAQ
1.How can I place an order for DS1258W-100IND# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1258W-100IND# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1258W-100IND# reliable?
The price and inventory of DS1258W-100IND# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1258W-100IND# is usually 5 days.
3.What payment methods are accepted for DS1258W-100IND#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1258W-100IND# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1258W-100IND#?
DS1258W-100IND# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1258W-100IND# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1258W-100IND#?
For technical support, including DS1258W-100IND# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1258W-100IND# requirements.
6.How does Aetrix verify that DS1258W-100IND# is sourced from the original manufacturer or authorized distributors?
All DS1258W-100IND# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1258W-100IND# meets industry standards.
7.What is the process for return or replacement of DS1258W-100IND#?
All DS1258W-100IND# units undergo pre-shipment inspection (PSI). If there is an issue with DS1258W-100IND#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1258W-100IND# part is unused and in its original packaging.
Return procedure for DS1258W-100IND#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1258W-100IND# Tags
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