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Analog Devices Inc./Maxim Integrated DS1258Y-70
- Part No.:
- DS1258Y-70
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 40-DIP Module (0.610", 15.495mm)
- Datasheet:
-
DS1258Y-70.pdf
- Description:
- IC NVSRAM 2MBIT PARALLEL 40EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,329
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Product details
Overview
DS1258Y-70 from Maxim Integrated (now Analog Devices) is a 128k × 16-bit nonvolatile SRAM with integrated lithium battery backup, 70 ns access time, 5 V ±10% supply, and industrial-grade temperature support up to +85°C. It serves as a drop-in NV memory replacement in embedded controllers, data loggers, and industrial PLCs requiring persistent storage without external support circuitry.
For engineers reviewing the DS1258Y-70 datasheet, DS1258Y-70 pinout, DS1258Y-70 application, or DS1258Y-70 equivalent, key selection criteria include write-protection voltage (4.25–4.5 V), byte-selectable CEU/CEL control, 10-year data retention, and 40-pin 740-mil extended DIP package compatibility.
Technical Context
The DS1258Y-70 implements autonomous power-fail detection via continuous VCC monitoring, triggering automatic lithium switchover below ~3.0 V and unconditional write protection at VTP = 4.25–4.5 V. Its dual chip-enable architecture enables independent upper/lower byte access without external logic.
Read/write timing is governed by tACC = 70 ns, tRC = 70 ns, and tWP = 55–75 ns, with output enable (OE) and chip-enable (CEU/CEL) paths supporting overlapping or independent byte access. The device operates in three distinct modes: active read/write, standby (ICCS1 = 0.7–1.5 mA), and battery-retention (ICCS2 = 150–300 µA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 131,072 × 16-bit (128k × 16); supports full-word or byte-selectable access via CEU/CEL |
| Access Time (tACC) | 70 ns max at VCC = 5 V ±10%; ensures compatibility with 14 MHz bus systems |
| Write Protection Threshold | VTP = 4.25–4.5 V; initiates automatic data lock before VCC decay compromises integrity |
| Data Retention | 10 years minimum without external power; guaranteed by factory-sealed lithium source |
| Operating Voltage | 4.5 V to 5.5 V; wider tolerance than DS1258AB (±5%), enabling use in less-regulated supplies |
| Temperature Range | 0°C to +70°C standard; IND suffix adds -40°C to +85°C operation for harsh environments |
| Package | 40-pin, 740-mil extended DIP; pin-compatible with legacy 40-pin memory sockets |
Pinout & Package
DS1258Y-70 uses a 40-pin, 740-mil extended dual in-line package (DIP) with 0.100" row spacing and 0.300" body width. Pin 1 is marked with a notch or dot; pins are arranged in two parallel rows of 20.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; selects one of 131,072 words (217) |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus; high-impedance when disabled |
| CEU / CEL | Chip Enable (Upper/Lower Byte) | Independent byte selection: CEU low = DQ8–DQ15 active; CEL low = DQ0–DQ7 active |
| WE | Write Enable | Active-low control; initiates write cycle when CEU/CEL also low |
| OE | Output Enable | Active-low control; enables outputs only during read cycles |
| VCC | Power Supply | +5 V ±10% main supply; powers logic and triggers lithium activation on first power-up |
| GND | Ground | Reference for all signals and internal switching circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Lithium Backup | Factory-sealed energy source electrically disconnected until first VCC application-ensures full 10-year retention capacity |
| Automatic Power-Fail Response | Monitors VCC continuously; switches to battery and locks writes within microseconds of out-of-tolerance detection |
| Byte-Selectable Access | Dual CEU/CEL inputs eliminate need for external byte-enable logic or glue logic in 8-bit microprocessor interfaces |
| Unlimited Write Cycles | No endurance limit-supports continuous logging or real-time configuration updates without wear-out concerns |
| Low-Power Standby | ICCS1 = 0.7–1.5 mA (CEU/CEL = 2.2 V); ICCS2 = 150–300 µA (CEU/CEL = VCC − 0.5 V) reduces system power budget |
Applications
| Industrial Data Logger | Programmable Logic Controller (PLC) |
|---|---|
Use Scenario: Continuous acquisition of sensor readings (temperature, pressure, flow) in unattended field deployments with intermittent power. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory storing last valid state and buffered measurements during brownouts. Use Value: Eliminates need for external EEPROM + SRAM + supervisor IC; retains data for ≥10 years without maintenance. | Use Scenario: Storing ladder logic runtime variables, I/O mapping tables, and fault history in factory-floor automation systems. IC Role / Device Role / Timing Role: Battery-backed RAM holding volatile program state across unexpected AC loss or maintenance shutdowns. Use Value: Enables deterministic restart without reinitialization or manual recovery-critical for safety-critical sequences. |
| Metering System (Electric/Water/Gas) | Medical Diagnostic Equipment |
Use Scenario: Tamper-resistant energy consumption registers in smart meters operating in utility substations with unstable grid conditions. IC Role / Device Role / Timing Role: Secure, write-protected memory for billing-critical cumulative kWh/kL values and timestamped event logs. Use Value: Meets ANSI C12.1 and IEC 62053 requirements for data integrity under rapid VCC collapse (<300 µs slew). | Use Scenario: Preserving calibration coefficients, patient session parameters, and diagnostic thresholds in portable ultrasound or ECG units. IC Role / Device Role / Timing Role: Fail-safe memory ensuring regulatory-compliant traceability of settings between battery swaps or charging cycles. Use Value: Avoids recalibration delays and maintains FDA 21 CFR Part 11 audit trail continuity without host intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1258AB-70 | Narrower VCC tolerance (±5% vs. ±10%); higher write-protection threshold (4.5–4.75 V) | Better suited for tightly regulated 5 V supplies; less tolerant of brownout conditions near 4.5 V | Select DS1258AB-70 only if system VCC regulation meets ±5% and brownout risk is minimal |
| STK12C68-E | Same 128k×16 organization but uses external capacitor-based backup; no integrated lithium | Requires external 0.1 F supercapacitor and charge circuit; shorter retention (~1 month typical) | Choose STK12C68-E only when long-term retention is not required and cost sensitivity outweighs reliability needs |
Compared with DS1258AB-70 and STK12C68-E, the DS1258Y-70 provides broader supply tolerance and lower write-protection voltage-making it optimal for margin-constrained industrial power rails where early write-lock prevents corruption during gradual decay.
Availability
DS1258Y-70 is available at Aetrix Electronics and suitable for industrial data loggers, programmable logic controllers, smart metering systems, and medical diagnostic equipment requiring stable component supply and guaranteed 10-year data retention.
Supply support for DS1258Y-70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices (via acquisition of Maxim Integrated) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, automotive, and healthcare applications.
The DS1258Y-70 belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically for systems demanding zero-battery-management, self-contained data persistence in mission-critical embedded environments.
FAQ
What is the guaranteed data retention period for the DS1258Y-70?
The DS1258Y-70 guarantees 10 years of data retention in the absence of external power, measured from the time VCC is first applied. This is ensured by a factory-sealed lithium energy source that remains electrically disconnected until initial power-up, preserving full capacity. The specification is assured through component selection, process control, and design-not production-tested per unit.
Does the DS1258Y-70 require external support circuitry for battery backup operation?
No, the DS1258Y-70 requires no external support circuitry. It integrates a lithium energy source and autonomous power-fail detection circuitry that monitors VCC continuously. When VCC drops below ~3.0 V, the internal switch connects the lithium cell to retain data; upon power-up, it seamlessly reconnects VCC and disconnects the battery-all without user intervention or external components.
How does the DS1258Y-70 differ from the DS1258AB-70 in terms of voltage tolerance?
The DS1258Y-70 operates over VCC = 4.5 V to 5.5 V (±10%), while the DS1258AB-70 requires VCC = 4.75 V to 5.25 V (±5%). Additionally, the DS1258Y-70 initiates write protection at 4.25–4.5 V, compared to 4.5–4.75 V for the DS1258AB-70. This makes the DS1258Y-70 more robust in brownout scenarios with slower VCC decay.
Can the DS1258Y-70 be used in industrial temperature environments?
Yes-the DS1258Y-70IND variant is rated for -40°C to +85°C operation. The base DS1258Y-70 (non-IND) is specified for 0°C to +70°C. Both share identical electrical specifications and pinout; only the temperature screening differs. Industrial qualification includes extended burn-in and parametric testing across the full range.
What is the function of CEU and CEL pins on the DS1258Y-70?
The CEU (Chip Enable Upper) and CEL (Chip Enable Lower) pins provide independent byte-select capability: CEU low enables DQ8–DQ15 (upper byte); CEL low enables DQ0–DQ7 (lower byte); both low enables full 16-bit access. This eliminates external byte-enable logic and simplifies interfacing with 8-bit microcontrollers or bus architectures requiring partial-word writes.
DS1258Y-70 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 40-DIP Module (0.610", 15.495mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 40-EDIP
DS1258Y-70 FAQ
1.How can I place an order for DS1258Y-70 through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1258Y-70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1258Y-70 reliable?
The price and inventory of DS1258Y-70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1258Y-70 is usually 5 days.
3.What payment methods are accepted for DS1258Y-70?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1258Y-70 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1258Y-70?
DS1258Y-70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1258Y-70 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1258Y-70?
For technical support, including DS1258Y-70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1258Y-70 requirements.
6.How does Aetrix verify that DS1258Y-70 is sourced from the original manufacturer or authorized distributors?
All DS1258Y-70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1258Y-70 meets industry standards.
7.What is the process for return or replacement of DS1258Y-70?
All DS1258Y-70 units undergo pre-shipment inspection (PSI). If there is an issue with DS1258Y-70, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1258Y-70 part is unused and in its original packaging.
Return procedure for DS1258Y-70:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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