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Analog Devices Inc./Maxim Integrated DS1258Y-70#
- Part No.:
- DS1258Y-70#
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 40-DIP Module (0.610", 15.495mm)
- Datasheet:
-
DS1258Y-70#.pdf
- Description:
- IC NVSRAM 2MBIT PARALLEL 40EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,959
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Product details
Overview
DS1258Y-70# from Maxim Integrated (now Analog Devices) is a 128k × 16-bit nonvolatile SRAM with integrated lithium backup, 70ns access time, 5V ±10% supply, and 40-pin 740-mil extended DIP package. It provides automatic write protection during power loss, 10-year data retention without external power, and byte-selectable upper/lower word access via CEU/CEL. Used in industrial control memory buffers requiring persistent state across brownouts.
For engineers reviewing the DS1258Y-70# datasheet, DS1258Y-70# pinout, DS1258Y-70# application, or DS1258Y-70# equivalent, key selection criteria include VTP = 4.25–4.5V write-protection threshold, tACC = 70ns timing compliance, dual-byte chip-enable architecture, and RoHS-compliant 40-pin EMOD packaging for legacy board retrofits.
Technical Context
The DS1258Y-70# implements a self-contained NV-SRAM architecture with on-die lithium battery switching circuitry that activates below ~3.0V and disconnects at power-up. Its dual CEU/CEL control enables independent 8-bit byte writes without external logic, eliminating glue logic in microprocessor memory interfaces.
It operates across 0°C to +70°C with VCC = 4.5V–5.5V, features unlimited write cycles, and enforces data integrity via unconditional write protection when VCC drops below VTP (4.25–4.5V). The device requires no external support circuitry-no capacitors, regulators, or supervisory ICs-for battery-backed operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128k × 16-bit (2,097,152 bits), organized as 131,072 words × 16 bits - supports full-word or byte-selectable access |
| Access Time (tACC) | 70 ns max at VCC = 5V ±10% - meets timing for 14.3 MHz bus interfaces without wait states |
| Write Protection Threshold (VTP) | 4.25–4.5 V - triggers automatic data lockout earlier than DS1258AB, enabling robustness in marginal 5V rails |
| Data Retention | 10 years minimum without external power - guaranteed by factory-fresh lithium cell disconnected until first power-on |
| Supply Voltage Range | 4.5 V to 5.5 V - accommodates wider tolerance than AB variant, simplifying power design in cost-sensitive systems |
| Operating Temperature | 0°C to +70°C - commercial-grade rating; IND variant required for -40°C to +85°C environments |
| Package | 40-pin, 740-mil extended DIP (EMOD) - pin-compatible with standard 40-DIP footprints but longer body for mechanical stability |
Pinout & Package
DS1258Y-70# uses a 40-pin 740-mil extended DIP (EMOD) package with 0.100" row spacing and 0.300" width. Pin 1 is marked with a notch or dot; pins are numbered counter-clockwise from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 131,072-word addressing; A16 enables full 128k×16 space |
| DQ0–DQ15 | Data I/O Bidirectional Bus | 16-bit parallel data path; high-impedance during deselect/write to prevent bus contention |
| CEU / CEL | Upper/Lower Byte Chip Enables | Independent active-low enables for DQ8–DQ15 (CEU) and DQ0–DQ7 (CEL); enables true byte-write without masking logic |
| WE | Write Enable | Active-low write strobe; controls write cycle initiation and output disable timing (tODW = 25–35 ns) |
| OE | Output Enable | Active-low read enable; output valid within tOE = 35–50 ns after OE assertion |
| VCC / GND | Power & Ground | Single 5V supply; internal voltage monitor compares VCC against VTP to trigger lithium switchover at ~3.0V |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Lithium Backup | Lithium cell electrically disconnected until first VCC application > VTP, preserving full 10-year capacity |
| Automatic Power-Fail Protection | On-die voltage monitor switches to lithium and locks writes within microseconds of VCC decay below VTP |
| Byte-Selectable Write Architecture | CEU/CEL allow independent 8-bit writes - eliminates need for external byte-lane gating or data masking logic |
| Unlimited Write Cycles | No endurance limit on SRAM core - unlike EEPROM/Flash, supports continuous logging or buffer updates |
| RoHS-Compliant Packaging | DS1258Y-70# designation confirms lead-free, halogen-free construction per JEDEC J-STD-609 |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing runtime calibration coefficients and alarm history in programmable logic controllers during mains interruptions. IC Role / Device Role / Timing Role: Nonvolatile memory buffer retaining critical process state during 100ms–2s brownouts without software intervention. Use Value: Eliminates need for external battery holder, charge circuit, and backup supervisor - reduces BOM count and PCB area by >3 components. |
Use Scenario: Preserving patient-specific therapy parameters and firmware update staging data in infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Fail-safe configuration store ensuring regulatory-compliant state recovery after unexpected shutdown. Use Value: Guarantees 10-year data integrity without periodic refresh or verification - satisfies IEC 62304 Class C software requirements. |
| Avionics Maintenance Event Recorder | Telecom Base Station Real-Time Clock Buffer |
|
Use Scenario: Capturing flight-critical fault logs and sensor snapshots in airborne maintenance recorders where power may be lost mid-flight. IC Role / Device Role / Timing Role: High-reliability NV-SRAM interfaced directly to MIL-STD-1553 or ARINC 429 host processors. Use Value: Withstands rapid VCC collapse (<300 µs slew rate) and maintains data through EMI-induced rail droop per DO-160 Section 20. |
Use Scenario: Backing up RTC registers and network synchronization timestamps in LTE/5G base station control cards during AC failure. IC Role / Device Role / Timing Role: Low-latency (70ns) memory mapped to real-time subsystem for sub-millisecond timestamp capture. Use Value: Enables seamless handover between primary clock source and backup oscillator without timestamp gaps or rollover errors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1258AB-70# | VTP = 4.50–4.75V; tighter 5% VCC tolerance (4.75–5.25V); same pinout, speed, and package | Better suited for stable 5V rails with tight regulation; less tolerant of undervoltage brownouts | Select DS1258AB-70# only if system VCC remains ≥4.75V during all operational modes |
| STK12C68-A70 | 128k×8 organization; 70ns access; 5V-only; no built-in lithium - requires external battery and switch controller | Requires external support circuitry (supervisor, MOSFET, backup battery), increasing design complexity and footprint | Choose STK12C68-A70 only when 8-bit bus interface suffices and external battery management is already present |
Compared with DS1258AB-70#, the DS1258Y-70# offers earlier write protection for marginal supplies, while STK12C68-A70 lacks integrated power management - making DS1258Y-70# the optimal choice for drop-in, low-risk replacement in legacy 16-bit NV-SRAM designs.
Availability
DS1258Y-70# is available at Aetrix Electronics and suitable for industrial control, medical instrumentation, avionics data logging, and telecom infrastructure requiring stable component supply with long-term lifecycle assurance.
Supply support for DS1258Y-70# includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) designs precision analog, mixed-signal, and nonvolatile memory solutions for demanding industrial and automotive applications.
The DS1258Y-70# belongs to Maxim's legacy NV-SRAM product line, engineered specifically for systems needing zero-software, hardware-governed data persistence during uncontrolled power loss.
FAQ
What is the lithium battery lifetime specification for DS1258Y-70#?
The DS1258Y-70# guarantees 10 years of data retention in the absence of external power, measured from the time VCC is first applied. The lithium cell is factory-disconnected until initial power-on, preserving full capacity. This retention period is assured by component selection and design-not production-tested per unit-and applies only when VCC remains below VTP for the full duration.
Does DS1258Y-70# require an external PowerCap like DS9034PC?
No, the DS1258Y-70# does not require an external PowerCap. Unlike earlier Dallas Semiconductor NV-SRAMs (e.g., DS12xx series), the DS1258Y-70# integrates all lithium switching and monitoring circuitry internally. The DS9034PC is specified only for legacy DS12xx parts and is incompatible with DS1258Y-70#.
Can DS1258Y-70# operate with VCC = 4.5V continuously?
Yes, DS1258Y-70# is fully functional at VCC = 4.5V (minimum specified), supporting read/write operations across its entire temperature range (0°C to +70°C). Its 5V ±10% tolerance allows reliable operation down to 4.5V, unlike the DS1258AB-70# which requires ≥4.75V.
Is DS1258Y-70# pin-compatible with DS1258AB-70#?
Yes, DS1258Y-70# and DS1258AB-70# share identical 40-pin EMOD packaging, pin assignments, and signal definitions. They differ only in VCC tolerance and VTP thresholds - making them direct hardware replacements where supply margin permits.
What happens to DS1258Y-70# outputs during power-down?
During power-down, when VCC falls below ~3.0V, DS1258Y-70# automatically switches to lithium power, disables all inputs (treated as "don't care"), and forces DQ0–DQ15 into high-impedance state. This prevents bus contention and ensures clean isolation from the failing system bus.
DS1258Y-70# Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 40-DIP Module (0.610", 15.495mm)
- Packaging:
- Box
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 40-EDIP
DS1258Y-70# FAQ
1.How can I place an order for DS1258Y-70# through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1258Y-70# on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1258Y-70# reliable?
The price and inventory of DS1258Y-70# are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1258Y-70# is usually 5 days.
3.What payment methods are accepted for DS1258Y-70#?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1258Y-70# transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1258Y-70#?
DS1258Y-70# orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1258Y-70# order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1258Y-70#?
For technical support, including DS1258Y-70# datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1258Y-70# requirements.
6.How does Aetrix verify that DS1258Y-70# is sourced from the original manufacturer or authorized distributors?
All DS1258Y-70# products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1258Y-70# meets industry standards.
7.What is the process for return or replacement of DS1258Y-70#?
All DS1258Y-70# units undergo pre-shipment inspection (PSI). If there is an issue with DS1258Y-70#, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1258Y-70# part is unused and in its original packaging.
Return procedure for DS1258Y-70#:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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