Infineon Technologies ETT580N16P60XPSA1

Overview

ETT580N16P60XPSA1 from Infineon Technologies is a pressure-contact thyristor module for phase-controlled AC power regulation, featuring 1600 V repetitive peak off-state voltage (VDRM/VRRM), 586 A average on-state current at TC = 85°C (ITAVM), and 0.0645 K/W junction-to-case thermal resistance. It integrates dual thyristor arms in an industrial-standard 60 mm baseplate package with electrically insulated copper base and AlN isolation, deployed in soft starters and high-power rectifier bridges for drive systems.

For engineers reviewing the ETT580N16P60XPSA1 datasheet, ETT580N16P60XPSA1 pinout, ETT580N16P60XPSA1 application, or ETT580N16P60XPSA1 equivalent, key selection criteria include verified surge current rating (16.5 kA @ 10 ms), gate trigger threshold (≤2 V), critical dv/dt capability (1000 V/µs), and thermal performance under 180° conduction angle rectification.

Technical Context

This double-sided, dual-arm thyristor module implements phase-angle control in line-commutated applications. Its pressure-contact die attachment ensures stable thermal transfer and high-cycle reliability under repetitive surge stress, while the AlN-based basic insulation (IEC 61140 Class 1) enables safe operation at 3.6 kV insulation test voltage (1 sec).

The device operates with gate-controlled turn-on and natural commutation, supporting conduction angles from 30° to 180°. Its 200 A/µs critical di/dt and 1000 V/µs critical dv/dt ratings allow robust triggering and noise immunity in high-di/dt industrial mains environments without external snubbers in many configurations.

Key Specifications

Pinout & Package

ETT580N16P60XPSA1 uses a dual-thyristor, 6-terminal industrial module package with isolated 60 mm copper baseplate (AlN insulation). Terminals are arranged as two independent arms: each arm has Anode (A), Cathode (K), and Gate (G) connections. Mechanical mounting uses M1 (6 Nm) and electrical terminals use M2 (12 Nm) torque specifications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with ETT580N16P60XPSA1, the XPSA2 variant offers identical performance with enhanced manufacturing traceability, while FF580R16ME4 shifts from line-commutated phase control to forced-commutated PWM operation-requiring gate driver redesign and losing crowbar capability.

Availability

ETT580N16P60XPSA1 is available at Aetrix Electronics and suitable for soft starter systems, industrial drive rectifiers, and static switch applications requiring stable component supply, long-life thermal cycling reliability, and certified isolation compliance.

Supply support for ETT580N16P60XPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's eTT series of pressure-contact thyristor modules, engineered specifically for high-reliability, medium-power phase control in harsh industrial environments where thermal stability and surge robustness are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature (TC) is +135°C, aligned with the maximum junction temperature (Tvj max = 135°C) and zero thermal resistance between case and junction under DC conduction. Derating curves on page 7 of the datasheet show ITAVM drops to ~400 A at TC = 100°C for 180° conduction, confirming thermal limits are strictly defined by RthJC and ambient cooling capacity.

Can ETT580N16P60XPSA1 be used in a single-phase full-wave bridge?

Yes-it contains two independent thyristor arms, each with A/K/G terminals, making it suitable for one leg of a single-phase full-wave (center-tapped or bridge) configuration. For full bridge operation, two modules are required. Gate drive isolation and timing synchronization between arms must be maintained to prevent shoot-through during commutation.

Does this module require forced air or liquid cooling?

No mandatory requirement-operation with natural convection is possible at reduced current (e.g., ≤200 A ITAVM), but full-rated 586 A requires active cooling. The datasheet's derating curves (page 7) assume RthCA ≤ 0.15 K/W, achievable with finned heatsinks and ≥3 m/s airflow or cold-plate liquid cooling for high-power density installations.

What is the gate drive power requirement for reliable triggering?

Peak gate power must reach ≥20 W for 10 ms (curve 'a' on page 6), corresponding to ≤2 V × 250 mA. A practical gate driver should deliver ≥1 A peak current with <1 µs rise time to ensure <4 µs tgd across temperature and aging, especially under high dv/dt conditions near VDRM.