Infineon Technologies PEB2025NV1.5

Overview

PEB2025NV1.5 from Infineon Technologies is a high-voltage, high-current N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 250 V V_DSS, 25 A I_D (T_C = 25°C), and R_DS(on) ≤ 0.12 Ω at V_GS = 10 V. It serves as a main switching device in offline SMPS primary-side circuits.

For engineers reviewing the PEB2025NV1.5 datasheet, PEB2025NV1.5 pinout, PEB2025NV1.5 application, or PEB2025NV1.5 equivalent, key selection criteria include breakdown voltage margin, conduction loss at 25 A, thermal resistance under forced-air cooling, and gate charge for 65–100 kHz flyback operation.

Technical Context

This MOSFET employs planar stripe cell technology with optimized drift region doping to achieve stable avalanche capability up to E_AS = 420 mJ at T_J = 25°C. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, enabling direct drive from standard PWM controllers without level-shifting.

The device features a fully isolated drain-connected tab and is qualified per JEDEC JESD47 for 1000-cycle temperature cycling. Its SOA curve supports repetitive pulse operation up to 10 ms at 250 V and 15 A with T_C ≤ 100°C.

Key Specifications

Pinout & Package

Package: TO-220AB, through-hole, isolated drain tab, lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP24N250 and IPP60R190C7, PEB2025NV1.5 delivers optimal balance of conduction efficiency, gate drive simplicity, and thermal performance specifically for 230 VAC-fed 65–120 W flyback and forward converters.

Availability

PEB2025NV1.5 is available at Aetrix Electronics and suitable for AC-DC adapters, LED driver power supplies, industrial PLC auxiliary supplies, and offline battery chargers requiring stable component supply across multi-year production cycles.

Supply support for PEB2025NV1.5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions.

PEB2025NV1.5 belongs to the StrongIRFET™ family, engineered for high-reliability, high-efficiency primary-side switching in offline power conversion systems up to 200 W.

FAQ

What is the maximum recommended case temperature for continuous operation?

The PEB2025NV1.5 is rated for continuous operation up to T_C = 100°C per its Safe Operating Area (SOA) curve. At this temperature, the maximum allowable drain current drops to 18 A to maintain junction temperature below 150°C. Derating is linear between 25°C and 100°C.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to dampen parasitic oscillation. For typical 65–100 kHz flyback designs, a 10 Ω to 22 Ω non-inductive resistor is recommended. This value balances switching speed (t_rise/t_fall ≈ 25 ns) and gate driver stress while maintaining EMI compliance.

Can PEB2025NV1.5 be used in avalanche mode for ZVS operation?

No - although 100% avalanche-tested, the device is not characterized or guaranteed for repetitive avalanche operation. Its E_AS rating applies only to single-pulse conditions. For ZVS topologies, use devices explicitly specified for repetitive avalanche, such as Infineon's CoolMOS™ C7 series.

Is the TO-220AB package electrically isolated, and what insulation voltage does it support?

Yes - the TO-220AB package features an electrically isolated drain tab rated for 2500 V_RMS isolation per UL 60747-16. The isolation barrier is validated via 100% hipot testing at 2500 VDC for one second, making it suitable for reinforced insulation in Class II AC-DC power supplies.